Simulation study of blue InGaN multiple quantum well light-emitting diodes with different hole injection layers

doi:10.1088/1674-1056/21/6/068506

中国物理B ›› 2012, Vol. 21 ›› Issue (6): 68506-068506.doi: 10.1088/1674-1056/21/6/068506

• INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY • 上一篇下一篇

Simulation study of blue InGaN multiple quantum well light-emitting diodes with different hole injection layers

仵乐娟^a, 李述体^a, 刘超^a, 王海龙^a, 卢太平^a, 张康^a, 肖国伟^b, 周玉刚^b, 郑树文^a, 尹以安^a, 杨孝东^a

a. Institute of Opto-electronic Materials and Technology, South China Normal University, Guangzhou 510631, China;
b. APT Electronics Ltd, Nansha District, Guangzhou 511458, China

收稿日期:2011-09-20 修回日期:2011-11-23 出版日期:2012-05-01 发布日期:2012-05-01
基金资助:
Project supported by the National Natural Science Foundation of China (Grant No. 50602018), the Science and Technology Program of Guangdong Province, China (Grant Nos. 2010B090400456, 2009B011100003, and 2010A081002002), and the Science and Technology Program of Guangzhou City, China (Grant No. 2010U1-D00191).

Simulation study of blue InGaN multiple quantum well light-emitting diodes with different hole injection layers

Wu Le-Juan(仵乐娟)^a), Li Shu-Ti(李述体)^a)†, Liu Chao(刘超)^a), Wang Hai-Long(王海龙)^a), Lu Tai-Ping(卢太平)^a), Zhang Kang(张康)^a), Xiao Guo-Wei(肖国伟)^b), Zhou Yu-Gang(周玉刚)^b), Zheng Shu-Wen(郑树文)^a), Yin Yi-An(尹以安)^a), and Yang Xiao-Dong(杨孝东)^a)

a. Institute of Opto-electronic Materials and Technology, South China Normal University, Guangzhou 510631, China;
b. APT Electronics Ltd, Nansha District, Guangzhou 511458, China

Received:2011-09-20 Revised:2011-11-23 Online:2012-05-01 Published:2012-05-01
Contact: Li Shu-Ti E-mail:lishuti@scnu.edu.cn
Supported by:
Project supported by the National Natural Science Foundation of China (Grant No. 50602018), the Science and Technology Program of Guangdong Province, China (Grant Nos. 2010B090400456, 2009B011100003, and 2010A081002002), and the Science and Technology Program of Guangzhou City, China (Grant No. 2010U1-D00191).

摘要/Abstract

摘要： InGaN-based light-emitting diodes with p-GaN and p-AlGaN hole injection layers are numerically studied using the APSYS simulation software. The simulation results indicate that light-emitting diodes with p-AlGaN hole injection layers show superior optical and electrical performance, such as an increase in light output power, a reduction in current leakage and alleviation of efficiency droop. These improvements can be attributed to the p-AlGaN serving as hole injection layers, which can alleviate the band bending induced by the polarization field, thereby improving both the hole injection efficiency and the electron blocking efficiency.

关键词: GaN-based light-emitting diodes, hole injection layer, injection efficiency

Abstract: InGaN-based light-emitting diodes with p-GaN and p-AlGaN hole injection layers are numerically studied using the APSYS simulation software. The simulation results indicate that light-emitting diodes with p-AlGaN hole injection layers show superior optical and electrical performance, such as an increase in light output power, a reduction in current leakage and alleviation of efficiency droop. These improvements can be attributed to the p-AlGaN serving as hole injection layers, which can alleviate the band bending induced by the polarization field, thereby improving both the hole injection efficiency and the electron blocking efficiency.

Key words: GaN-based light-emitting diodes, hole injection layer, injection efficiency

中图分类号: (Light-emitting devices)

85.60.Jb

87.15.A- (Theory, modeling, and computer simulation) 78.60.Fi (Electroluminescence) 73.61.Ey (III-V semiconductors)

仵乐娟, 李述体, 刘超, 王海龙, 卢太平, 张康, 肖国伟, 周玉刚, 郑树文, 尹以安, 杨孝东. Simulation study of blue InGaN multiple quantum well light-emitting diodes with different hole injection layers[J]. 中国物理B, 2012, 21(6): 68506-068506.

Wu Le-Juan(仵乐娟), Li Shu-Ti(李述体), Liu Chao(刘超), Wang Hai-Long(王海龙), Lu Tai-Ping(卢太平), Zhang Kang(张康), Xiao Guo-Wei(肖国伟), Zhou Yu-Gang(周玉刚), Zheng Shu-Wen(郑树文), Yin Yi-An(尹以安), and Yang Xiao-Dong(杨孝东) . Simulation study of blue InGaN multiple quantum well light-emitting diodes with different hole injection layers[J]. Chin. Phys. B, 2012, 21(6): 68506-068506.

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Simulation study of blue InGaN multiple quantum well light-emitting diodes with different hole injection layers

Simulation study of blue InGaN multiple quantum well light-emitting diodes with different hole injection layers

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