The advantage of blue InGaN multiple quantum wells light-emitting diodes with p-AlInN electron blocking layer

doi:10.1088/1674-1056/20/9/098503

中国物理B ›› 2011, Vol. 20 ›› Issue (9): 98503-098503.doi: 10.1088/1674-1056/20/9/098503

The advantage of blue InGaN multiple quantum wells light-emitting diodes with p-AlInN electron blocking layer

肖国伟¹, 周玉刚¹, 卢太平², 李述体², 张康², 刘超², 郑树文², 尹以安², 仵乐娟², 王海龙², 杨孝东²

(1)APT Electronics Ltd, Nansha District, Guangzhou 511458, China; (2)Institute of Opto-electronic Materials and Technology, South China Normal University, Guangzhou 510631, China

收稿日期:2011-01-19 修回日期:2011-03-26 出版日期:2011-09-15 发布日期:2011-09-15

The advantage of blue InGaN multiple quantum wells light-emitting diodes with p-AlInN electron blocking layer

Lu Tai-Ping(卢太平)^a), Li Shu-Ti(李述体)^a), Zhang Kang(张康)^a), Liu Chao(刘超)^a), Xiao Guo-Wei(肖国伟)^b), Zhou Yu-Gang(周玉刚)^b), Zheng Shu-Wen(郑树文)^a), Yin Yi-An(尹以安)^a), Wu Le-Juan(仵乐娟)^a), Wang Hai-Long(王海龙)^a), and Yang Xiao-Dong(杨孝东)^a)

^a Institute of Opto-electronic Materials and Technology, South China Normal University, Guangzhou 510631, China; ^b APT Electronics Ltd, Nansha District, Guangzhou 511458, China

Received:2011-01-19 Revised:2011-03-26 Online:2011-09-15 Published:2011-09-15

摘要/Abstract

摘要： InGaN based light-emitting diodes (LEDs) with different electron blocking layers have been numerically investigated using the APSYS simulation software. It is found that the structure with a p-AlInN electron blocking layer showes improved light output power, lower current leakage, and smaller efficiency droop. Based on numerical simulation and analysis, these improvements of the electrical and optical characteristics are mainly attributed to the efficient electron blocking in the InGaN/GaN multiple quantum wells (MQWs).

关键词: GaN-based light-emitting diodes, electron blocking layer, AlInN

Abstract: InGaN based light-emitting diodes (LEDs) with different electron blocking layers have been numerically investigated using the APSYS simulation software. It is found that the structure with a p-AlInN electron blocking layer showes improved light output power, lower current leakage, and smaller efficiency droop. Based on numerical simulation and analysis, these improvements of the electrical and optical characteristics are mainly attributed to the efficient electron blocking in the InGaN/GaN multiple quantum wells (MQWs).

Key words: GaN-based light-emitting diodes, electron blocking layer, AlInN

中图分类号: (Light-emitting devices)

85.60.Jb

87.15.A- (Theory, modeling, and computer simulation) 78.60.Fi (Electroluminescence) 73.61.Ey (III-V semiconductors)

卢太平, 李述体, 张康, 刘超, 肖国伟, 周玉刚, 郑树文, 尹以安, 仵乐娟, 王海龙, 杨孝东. The advantage of blue InGaN multiple quantum wells light-emitting diodes with p-AlInN electron blocking layer[J]. 中国物理B, 2011, 20(9): 98503-098503.

Lu Tai-Ping(卢太平), Li Shu-Ti(李述体), Zhang Kang(张康), Liu Chao(刘超), Xiao Guo-Wei(肖国伟), Zhou Yu-Gang(周玉刚), Zheng Shu-Wen(郑树文), Yin Yi-An(尹以安), Wu Le-Juan(仵乐娟), Wang Hai-Long(王海龙), and Yang Xiao-Dong(杨孝东) . The advantage of blue InGaN multiple quantum wells light-emitting diodes with p-AlInN electron blocking layer[J]. Chin. Phys. B, 2011, 20(9): 98503-098503.

参考文献 16

[1]	Kim M H, Schubert M F, Dai Q, Kim J K, Schubert E F, Piprek J and Park Y 2007 Appl. Phys. Lett. 91 183507
[2]	Schubert M F, Xu J, Kim J K, Schubert E F, Kim M H, Yoon S, Lee S M, Sone C, Sakong T and Park Y 2008 Appl. Phys. Lett. 93 041102
[3]	Shen Y C, Mueller G O, Watanabe S, Gardner N F, Munkholm A and Krames M R 2007 Appl. Phys. Lett. 91 141101
[4]	Chen Y X, Shen G D, Guo W L, Xu C and Li J J 2011 Chin. Phys. B 20 017204
[5]	Kim A Y, Go W, Steigerwald D A, Wierer J J, Gardner N F, Sun J, Stockman S A, Martin P S, Krames M R, Kern R S and Steranka F M 2001 Phys. Status Solidi A 188 15
[6]	Rozhansky I V and Zakheim D A 2007 Phys. Status Solidi A 204 227
[7]	David A, Grundmann M J, Kaeding J F, Gardner N F, Mihopoulos T G, Krames M R, Mihopoulos T G and Krames M R 2008 Appl. Phys. Lett. 92 053502
[8]	Schubert M F, Chhajed S, Kim J K, and Schubert E F, Koleske D D, Crawford M H, Lee S R, Fischer A J, Thale R G and Banas M A 2007 Appl. Phys. Lett. 91 231114
[9]	Pei X J, Guo L W, Wang X H, W Y, Jia H Q, Chen H and Zhou J M 2009 Chin. Phys. Lett. 26 028101
[10]	Choi S, Kim H J, Kim S S, Liu J, Kim J, Ryou J H, Dupuis R D, Fischer A M and Ponce F A 2010 Appl. Phys. Lett. 96 221105
[11]	APSYS by Crosslight Software Inc., Burnaby, Canada
[12]	Stringfellow G B and Craford M G 1997 High Brightness Light Emitting Diodes (San Diego: CA Academic) p. 412
[13]	Vurgaftman I and Meyer J R 2003 J. Appl. Phys. 94 3675
[14]	Lu G J, Zhu J J, Jiang D S, Wang Y T, Zhao D G, Liu Z S, Zhang S M and Yang H 2010 Chin. Phys. B 19 026804
[15]	Song J, Xu F J, Yan X D, Lin F, Huang C C, You L P, Yu T J, Wang X Q, Shen B, Wei K and Liu X Y 2010 Appl. Phys. Lett. 97 232106
[16]	Wang H L, Yin Y A and Li S T 2010 Proceedings of OSA-IEEE-COS Topical Conference on Advances in Optoelectronics and Micro/Nano-optics, December 3—6, 2010, Guangzhou, China

The advantage of blue InGaN multiple quantum wells light-emitting diodes with p-AlInN electron blocking layer

The advantage of blue InGaN multiple quantum wells light-emitting diodes with p-AlInN electron blocking layer

PDF (PC)

赞

可视化

摘要/Abstract

引用本文

使用本文

参考文献 16

相关文章 13

Metrics

本文评价

推荐阅读 0

[1]	李光, 王林媛, 宋伟东, 姜健, 罗幸君, 郭佳琦, 贺龙飞, 张康, 吴启保, 李述体. Enhanced performance of AlGaN-based ultraviolet light-emitting diodes with linearly graded AlGaN inserting layer in electron blocking layer[J]. 中国物理B, 2019, 28(5): 58502-058502.
[2]	王燕丽, 李培咸, 许晟瑞, 周小伟, 张心禹, 姜思宇, 黄茹雪, 刘洋, 訾亚丽, 吴金星, 郝跃. Double superlattice structure for improving the performance of ultraviolet light-emitting diodes[J]. 中国物理B, 2019, 28(3): 38502-038502.
[3]	张诚, 孙慧卿, 李旭娜, 孙浩, 范宣聪, 张柱定, 郭志友. Performance improvement of AlGaN-based deep ultraviolet light-emitting diodes with double electron blocking layers[J]. 中国物理B, 2016, 25(2): 28501-028501.
[4]	王幸福, 童金辉, 赵璧君, 陈鑫, 任志伟, 李丹伟, 卓祥景, 章俊, 易翰翔, 李述体. Efficiency and droop improvement in a blue InGaN-based light emitting diode with a p-InGaN layer inserted in the GaN barriers[J]. 中国物理B, 2013, 22(9): 98504-098504.
[5]	王天虎, 徐进良. Improved performance of InGaN light-emitting diodes with a novel sawtooth-shaped electron blocking layer[J]. 中国物理B, 2013, 22(8): 88504-088504.
[6]	丁彬彬, 赵芳, 宋晶晶, 熊建勇, 郑树文, 张运炎, 许毅钦, 周德涛, 喻晓鹏, 张瀚翔, 张涛, 范广涵. Performance improvement of blue InGaN light-emitting diodes with a specially designed n-AlGaN hole blocking layer[J]. 中国物理B, 2013, 22(8): 88503-088503.
[7]	童金辉, 赵璧君, 王幸福, 陈鑫, 任志伟, 李丹伟, 卓祥景, 章俊, 易翰翔, 李述体. Droop improvement in blue InGaN light emitting diode with GaN/InGaN superlattice barriers[J]. 中国物理B, 2013, 22(6): 68505-068505.
[8]	赵芳, 姚光锐, 宋晶晶, 丁彬彬, 熊建勇, 苏晨, 郑树文, 张涛, 范广涵. Performance improvement of blue light-emitting diodes with an AlInN/GaN superlattice electron-blocking layer[J]. 中国物理B, 2013, 22(5): 58503-058503.
[9]	张雪锋, 王莉, 刘杰, 魏崃, 许键. Electrical characteristics of AlInN/GaN HEMTs under cryogenic operation[J]. Chin. Phys. B, 2013, 22(1): 17202-017202.
[10]	仵乐娟, 李述体, 刘超, 王海龙, 卢太平, 张康, 肖国伟, 周玉刚, 郑树文, 尹以安, 杨孝东. Simulation study of blue InGaN multiple quantum well light-emitting diodes with different hole injection layers[J]. 中国物理B, 2012, 21(6): 68506-068506.
[11]	邵茗, 郭旭, 陈淑芬, 范曲立, 黄维. Efficient top-emitting white organic light emitting device with an extremely stable chromaticity and viewing-angle[J]. 中国物理B, 2012, 21(10): 108507-108507.
[12]	卢太平, 李述体, 张康, 刘超, 肖国伟, 周玉刚, 郑树文, 尹以安, 仵乐娟, 王海龙, 杨孝东. Blue InGaN light-emitting diodes with dip-shaped quantum wells[J]. 中国物理B, 2011, 20(10): 108504-108504.
[13]	何安和, 章勇, 朱学绘, 陈献文, 范广涵, 何苗. Improved light extraction of GaN-based light-emitting diodes with surface-textured indium tin oxide electrodes by nickel nanoparticle mask dry-etching[J]. 中国物理B, 2010, 19(6): 68101-068101.