中国物理B ›› 2011, Vol. 20 ›› Issue (5): 57305-057305.doi: 10.1088/1674-1056/20/5/057305

• CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES • 上一篇    下一篇

Different temperature dependence of carrier transport properties between AlxGa1-xN/InyGa1-yN/GaN and AlxGa1-xN/GaN heterostructures

宋杰, 许福军, 黄呈橙, 林芳, 王新强, 杨志坚, 沈波   

  1. State Key Laboratory of Artificial Microstructure and Mesoscopic Physics, School of Physics,Peking University, Beijing 100871, China
  • 收稿日期:2010-11-22 修回日期:2011-01-07 出版日期:2011-05-15 发布日期:2011-05-15
  • 基金资助:
    Project supported by the National Natural Science Foundation of China (Grant Nos. 60906041, 60736033, 60890193, and 10774001).

Different temperature dependence of carrier transport properties between AlxGa1-xN/InyGa1-yN/GaN and AlxGa1-xN/GaN heterostructures

Song Jie (宋杰), Xu Fu-Jun (许福军), Huang Cheng-Cheng (黄呈橙), Lin Fang (林芳), Wang Xin-Qiang (王新强), Yang Zhi-Jian (杨志坚), Shen Bo (沈波)   

  1. State Key Laboratory of Artificial Microstructure and Mesoscopic Physics, School of Physics,Peking University, Beijing 100871, China
  • Received:2010-11-22 Revised:2011-01-07 Online:2011-05-15 Published:2011-05-15
  • Supported by:
    Project supported by the National Natural Science Foundation of China (Grant Nos. 60906041, 60736033, 60890193, and 10774001).

PDF (PC)

958

赞

摘要： The temperature dependence of carrier transport properties of AlxGa1-xN/InyGa1-yN/GaN and AlxGa1-xN/GaN heterostructures has been investigated. It is shown that the Hall mobility in Al0.25Ga0.75N/In0.03Ga0.97N/GaN heterostructures is higher than that in Al0.25Ga0.75N/GaN heterostructures at temperatures above 500 K, even the mobility in the former is much lower than that in the latter at 300 K. More importantly, the electron sheet density in Al0.25Ga0.75N/In0.03Ga0.97N/GaN heterostructures decreases slightly, whereas the electron sheet density in Al0.25Ga0.75N/GaN heterostructures gradually increases with increasing temperature above 500 K. It is believed that an electron depletion layer is formed due to the negative polarization charges at the InyGa1-yN/GaN heterointerface induced by the compressive strain in the InyGa1-yN channel, which effectively suppresses the parallel conductivity originating from the thermal excitation in the underlying GaN layer at high temperatures.

Abstract: The temperature dependence of carrier transport properties of AlxGa1-xN/InyGa1-yN/GaN and AlxGa1-xN/GaN heterostructures has been investigated. It is shown that the Hall mobility in Al0.25Ga0.75N/In0.03Ga0.97N/GaN heterostructures is higher than that in Al0.25Ga0.75N/GaN heterostructures at temperatures above 500 K, even the mobility in the former is much lower than that in the latter at 300 K. More importantly, the electron sheet density in Al0.25Ga0.75N/In0.03Ga0.97N/GaN heterostructures decreases slightly, whereas the electron sheet density in Al0.25Ga0.75N/GaN heterostructures gradually increases with increasing temperature above 500 K. It is believed that an electron depletion layer is formed due to the negative polarization charges at the InyGa1-yN/GaN heterointerface induced by the compressive strain in the InyGa1-yN channel, which effectively suppresses the parallel conductivity originating from the thermal excitation in the underlying GaN layer at high temperatures.

Key words: temperature dependence, Hall mobility, parallel conductivity

中图分类号:  (III-V semiconductors)

  • 73.61.Ey
72.20.Fr (Low-field transport and mobility; piezoresistance) 73.50.Dn (Low-field transport and mobility; piezoresistance) 73.40.Kp (III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions)