中国物理B ›› 2011, Vol. 20 ›› Issue (5): 57304-057304.doi: 10.1088/1674-1056/20/5/057304

• CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES • 上一篇    下一篇

Optically controlled SiCGe/SiC heterojunction transistor with charge-compensation layer

蒲红斌, 曹琳, 陈治明, 任杰   

  1. Department of Electronic Engineering, Xi'an University of Technology, Xi'an 710048, China
  • 收稿日期:2010-05-18 修回日期:2011-01-08 出版日期:2011-05-15 发布日期:2011-05-15
  • 基金资助:
    Project supported by National Natural Science Foundation of China (Grant No. 60876050), Special Scientific Research Project of Shaanxi Provincial Departments of Education, China (Grant No. 08JK367), and the Research Fund for Excellent Doctor Degree Thesis

Optically controlled SiCGe/SiC heterojunction transistor with charge-compensation layer

Pu Hong-Bin (蒲红斌), Cao Lin (曹琳), Chen Zhi-Ming (陈治明), Ren Jie (任杰)   

  1. Department of Electronic Engineering, Xi'an University of Technology, Xi'an 710048, China
  • Received:2010-05-18 Revised:2011-01-08 Online:2011-05-15 Published:2011-05-15
  • Supported by:
    Project supported by National Natural Science Foundation of China (Grant No. 60876050), Special Scientific Research Project of Shaanxi Provincial Departments of Education, China (Grant No. 08JK367), and the Research Fund for Excellent Doctor Degree Thesis of Xi'an University of Technology, China.

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摘要： A novel optically controlled SiCGe/SiC heterojunction transistor with charge-compensation technique has been simulated by using commercial simulator. This paper discusses the electric field distribution, spectral response and transient response of the device. Due to utilizing p-SiCGe charge-compensation layer, the responsivity increases nearly two times and breakdown voltage increases 33%. The switching characteristic illustrates that the device is latch-free and its fall time is much longer than the rise time. With an increase of the light power density and wavelength, the rise time and fall time will become shorter and longer, respectively. In terms of carrier lifetime, a compromise should be made between the responsivity and switching speed, the ratio of them reaches maximum value when the minority carrier lifetime equals 90 ns.

Abstract: A novel optically controlled SiCGe/SiC heterojunction transistor with charge-compensation technique has been simulated by using commercial simulator. This paper discusses the electric field distribution, spectral response and transient response of the device. Due to utilizing p-SiCGe charge-compensation layer, the responsivity increases nearly two times and breakdown voltage increases 33%. The switching characteristic illustrates that the device is latch-free and its fall time is much longer than the rise time. With an increase of the light power density and wavelength, the rise time and fall time will become shorter and longer, respectively. In terms of carrier lifetime, a compromise should be made between the responsivity and switching speed, the ratio of them reaches maximum value when the minority carrier lifetime equals 90 ns.

Key words: SiCGe/SiC, transistor, charge-compensation, responsivity

中图分类号:  (Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions)

  • 73.40.Lq
85.60.Dw (Photodiodes; phototransistors; photoresistors) 42.70.Nq (Other nonlinear optical materials; photorefractive and semiconductor materials) 61.43.Dq (Amorphous semiconductors, metals, and alloys)