Epitaxy of III-nitrides on two-dimensional materials and its applications

doi:10.1088/1674-1056/ac921f

中国物理B ›› 2022, Vol. 31 ›› Issue (11): 117702-117702.doi: 10.1088/1674-1056/ac921f

所属专题： TOPICAL REVIEW — Celebrating 30 Years of Chinese Physics B

Epitaxy of III-nitrides on two-dimensional materials and its applications

Yu Xu(徐俞)^1,2, Jianfeng Wang(王建峰)^1,2,†, Bing Cao(曹冰)^3,4, and Ke Xu(徐科)^1,2,5,‡

1 Suzhou Institute of Nano-Tech and Nano-Bionics(SINANO), Chinese Academy of Sciences(CAS), Suzhou 215123, China;
2 Shenyang National Laboratory for Materials Science, Shenyang 110010, China;
3 School of Optoelectronic Science and Engineering&Collaborative Innovation Center of Suzhou Nano Science and Technology, Soochow University, Suzhou 215006, China;
4 Key Laboratory of Advanced Optical Manufacturing Technologies of Jiangsu Province&Key Laboratory of Modern Optical Technologies of Education Ministry of China, Soochow University, Suzhou 215006, China;
5 Jiangsu Institute of Advanced Semiconductors Ltd, Suzhou 215123, China

收稿日期:2022-04-15 修回日期:2022-09-11 接受日期:2022-09-15 出版日期:2022-10-17 发布日期:2022-10-28
通讯作者: Jianfeng Wang, Ke Xu E-mail:jfwang2006@sinano.ac.cn;kxu2006@sinano.ac.cn
基金资助:
Project supported by the State Key Program of the National Natural Science Foundation of China (Grant No. 61734008) and the National Natural Science Foundation of China (Grant No. 62174173). Thanks to Yipu Qu, Yuning Wang, Lu Li, Fan Yang, Jianjie Li, Jiahao Tao, Xin Cai, Jinbiao Huang, Jizong Zhou, Yunpeng Wu, and Meng Le for their preparing the manuscript.

Epitaxy of III-nitrides on two-dimensional materials and its applications

Yu Xu(徐俞)^1,2, Jianfeng Wang(王建峰)^1,2,†, Bing Cao(曹冰)^3,4, and Ke Xu(徐科)^1,2,5,‡

1 Suzhou Institute of Nano-Tech and Nano-Bionics(SINANO), Chinese Academy of Sciences(CAS), Suzhou 215123, China;
2 Shenyang National Laboratory for Materials Science, Shenyang 110010, China;
3 School of Optoelectronic Science and Engineering&Collaborative Innovation Center of Suzhou Nano Science and Technology, Soochow University, Suzhou 215006, China;
4 Key Laboratory of Advanced Optical Manufacturing Technologies of Jiangsu Province&Key Laboratory of Modern Optical Technologies of Education Ministry of China, Soochow University, Suzhou 215006, China;
5 Jiangsu Institute of Advanced Semiconductors Ltd, Suzhou 215123, China

Received:2022-04-15 Revised:2022-09-11 Accepted:2022-09-15 Online:2022-10-17 Published:2022-10-28
Contact: Jianfeng Wang, Ke Xu E-mail:jfwang2006@sinano.ac.cn;kxu2006@sinano.ac.cn
Supported by:
Project supported by the State Key Program of the National Natural Science Foundation of China (Grant No. 61734008) and the National Natural Science Foundation of China (Grant No. 62174173). Thanks to Yipu Qu, Yuning Wang, Lu Li, Fan Yang, Jianjie Li, Jiahao Tao, Xin Cai, Jinbiao Huang, Jizong Zhou, Yunpeng Wu, and Meng Le for their preparing the manuscript.

摘要/Abstract

摘要： III-nitride semiconductor materials have excellent optoelectronic properties, mechanical properties, and chemical stability, which have important applications in the field of optoelectronics and microelectronics. Two-dimensional (2D) materials have been widely focused in recent years due to their peculiar properties. With the property of weak bonding between layers of 2D materials, the growth of III-nitrides on 2D materials has been proposed to solve the mismatch problem caused by heterogeneous epitaxy and to develop substrate stripping techniques to obtain high-quality, low-cost nitride materials for high-quality nitride devices and their extension in the field of flexible devices. In this progress report, the main methods for the preparation of 2D materials, and the recent progress and applications of different techniques for the growth of III-nitrides based on 2D materials are reviewed.

关键词: nitrides, two-dimensional materials, van der Waals forces

Abstract: III-nitride semiconductor materials have excellent optoelectronic properties, mechanical properties, and chemical stability, which have important applications in the field of optoelectronics and microelectronics. Two-dimensional (2D) materials have been widely focused in recent years due to their peculiar properties. With the property of weak bonding between layers of 2D materials, the growth of III-nitrides on 2D materials has been proposed to solve the mismatch problem caused by heterogeneous epitaxy and to develop substrate stripping techniques to obtain high-quality, low-cost nitride materials for high-quality nitride devices and their extension in the field of flexible devices. In this progress report, the main methods for the preparation of 2D materials, and the recent progress and applications of different techniques for the growth of III-nitrides based on 2D materials are reviewed.

Key words: nitrides, two-dimensional materials, van der Waals forces

中图分类号: (Elements, oxides, nitrides, borides, carbides, chalcogenides, etc.)

77.84.Bw

73.61.Ey (III-V semiconductors) 68.65.-k (Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties)

Yu Xu(徐俞), Jianfeng Wang(王建峰), Bing Cao(曹冰), and Ke Xu(徐科). Epitaxy of III-nitrides on two-dimensional materials and its applications[J]. 中国物理B, 2022, 31(11): 117702-117702.

Yu Xu(徐俞), Jianfeng Wang(王建峰), Bing Cao(曹冰), and Ke Xu(徐科). Epitaxy of III-nitrides on two-dimensional materials and its applications[J]. Chin. Phys. B, 2022, 31(11): 117702-117702.

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Epitaxy of III-nitrides on two-dimensional materials and its applications

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