中国物理B ›› 2007, Vol. 16 ›› Issue (8): 2310-2314.doi: 10.1088/1009-1963/16/8/025

• • 上一篇    下一篇

Electronic structure and defect states of transition films from amorphous to microcrystalline silicon studied by surface photovoltage spectroscopy

于威, 王春生, 路万兵, 何杰, 韩晓霞, 傅广生   

  1. College of Physical Science and Technology, Hebei University, Baoding 071002, China
  • 收稿日期:2006-08-04 修回日期:2006-12-12 出版日期:2007-08-20 发布日期:2007-08-20
  • 基金资助:
    Project supported by the Natural Foundation of Hebei province, People's Republic of China (Grant No 503129).

Electronic structure and defect states of transition films from amorphous to microcrystalline silicon studied by surface photovoltage spectroscopy

Yu Wei(于威), Wang Chun-Sheng(王春生)†, Lu Wan-Bing(路万兵), He Jie(何杰), Han Xiao-Xia(韩晓霞), and Fu Guang-Sheng(傅广生)   

  1. College of Physical Science and Technology, Hebei University, Baoding 071002, China
  • Received:2006-08-04 Revised:2006-12-12 Online:2007-08-20 Published:2007-08-20
  • Supported by:
    Project supported by the Natural Foundation of Hebei province, People's Republic of China (Grant No 503129).

PDF (PC)

566

赞

摘要： In this paper, surface photovoltage spectroscopy (SPS) is used to determine the electronic structure of the hydrogenated transition Si films. All samples are prepared by using helicon wave plasma-enhanced chemical vapour deposition technique, the films exhibit a transition from the amorphous phase to the microcrystalline phase with increasing temperature. The film deposited at lower substrate temperature has the amorphous-like electronic structure with two types of dominant defect states corresponding to the occupied Si dangling bond states (D0/D- and the empty Si dangling states (D+). At higher substrate temperature, the crystallinity of the deposited films increases, while their band gap energy decreases. Meanwhile, two types of additional defect states is incorporate into the films as compared with the amorphous counterpart, which is attributed to the interface defect states between the microcrystalline Si grains and the amorphous matrix. The relative SPS intensity of these two kinds of defect states in samples deposited above 300\du increases first and decreases afterwards, which may be interpreted as a result of the competition between hydrogen release and crystalline grain size increment with increasing substrate temperature.

关键词: microcrystalline silicon, defect states, surface photovoltaic spectroscopy

Abstract: In this paper, surface photovoltage spectroscopy (SPS) is used to determine the electronic structure of the hydrogenated transition Si films. All samples are prepared by using helicon wave plasma-enhanced chemical vapour deposition technique, the films exhibit a transition from the amorphous phase to the microcrystalline phase with increasing temperature. The film deposited at lower substrate temperature has the amorphous-like electronic structure with two types of dominant defect states corresponding to the occupied Si dangling bond states (D0/D- and the empty Si dangling states (D+). At higher substrate temperature, the crystallinity of the deposited films increases, while their band gap energy decreases. Meanwhile, two types of additional defect states is incorporate into the films as compared with the amorphous counterpart, which is attributed to the interface defect states between the microcrystalline Si grains and the amorphous matrix. The relative SPS intensity of these two kinds of defect states in samples deposited above 300℃ increases first and decreases afterwards, which may be interpreted as a result of the competition between hydrogen release and crystalline grain size increment with increasing substrate temperature.

Key words: microcrystalline silicon, defect states, surface photovoltaic spectroscopy

中图分类号:  (Elemental semiconductors)

  • 71.20.Mq
61.43.Dq (Amorphous semiconductors, metals, and alloys) 71.55.Cn (Elemental semiconductors) 73.50.Pz (Photoconduction and photovoltaic effects) 73.61.Cw (Elemental semiconductors) 81.15.Gh (Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.))