中国物理B ›› 2006, Vol. 15 ›› Issue (11): 2713-2717.doi: 10.1088/1009-1963/15/11/042

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Optical emission spectroscopy study on depositionprocess of microcrystalline silicon

吴志猛1, 雷青松1, 奚建平1, 耿新华2, 赵颖2, 孙建2   

  1. (1)Institute of Micro/Nano Science and Technology, Shanghai Jiao Tong University, Shanghai 200030, China; (2)Institute of Optoelectronics, Nankai University, Tianjin 300071, China
  • 收稿日期:2005-11-09 修回日期:2005-12-12 出版日期:2006-11-20 发布日期:2006-11-20

Optical emission spectroscopy study on depositionprocess of microcrystalline silicon

Wu Zhi-Meng(吴志猛)a)†, Lei Qing-Song(雷青松)a), Geng Xin-Hua(耿新华)b), Zhao Ying(赵颖)b), Sun Jian(孙建)b), and Xi Jian-Ping(奚建平)a)   

  1. a Institute of Micro/Nano Science and Technology, Shanghai Jiao Tong University, Shanghai 200030, China; b Institute of Optoelectronics, Nankai University, Tianjin 300071, China
  • Received:2005-11-09 Revised:2005-12-12 Online:2006-11-20 Published:2006-11-20

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摘要： This paper reports that the optical emission spectroscopy (OES) is used to monitor the plasma during the deposition process of hydrogenated microcrystalline silicon films in a very high frequency plasma enhanced chemical vapour deposition system. The OES intensities (SiH\sj{*}, H$_\al^*$ and H$_\be^*$) are investigated by varying the deposition parameters. The result shows that the discharge power, silane concentrations and substrate temperature affect the OES intensities. When the discharge power at silane concentration of 4\% increases, the OES intensities increase first and then are constant, the intensities increase with the discharge power monotonously at silane concentration of 6\%. The SiH\sj{*} intensity increases with silane concentration, while the intensities of H$_\al^*$ and H$_\be^*$ increase first and then decrease. When the substrate temperature increases, the SiH\sj{*} intensity decreases and the intensities of H$_\al^*$ and H$_\be^*$ are constant. The correlation between the intensity ratio of $I_{\rm H_\al^*}$/$I_{{\rm SiH}^*}$ and the crystalline volume fraction ($X_{\rm c}$) of films is confirmed.

关键词: microcrystalline silicon, VHF-PECVD, optical emission spectroscopy

Abstract: This paper reports that the optical emission spectroscopy (OES) is used to monitor the plasma during the deposition process of hydrogenated microcrystalline silicon films in a very high frequency plasma enhanced chemical vapour deposition system. The OES intensities (SiH*, H$_{\alpha}^*$ and H$_{\beta}^*$) are investigated by varying the deposition parameters. The result shows that the discharge power, silane concentrations and substrate temperature affect the OES intensities. When the discharge power at silane concentration of 4% increases, the OES intensities increase first and then are constant, the intensities increase with the discharge power monotonously at silane concentration of 6%. The SiH* intensity increases with silane concentration, while the intensities of H$_{\alpha}^*$ and H$_{\beta}^*$ increase first and then decrease. When the substrate temperature increases, the SiH* intensity decreases and the intensities of H$_{\alpha}^*$ and H$_{\beta}^*$ are constant. The correlation between the intensity ratio of $I_{\rm H_{\alpha}^*}$/$I_{{\rm SiH}^*}$ and the crystalline volume fraction ($X_{\rm c}$) of films is confirmed.

Key words: microcrystalline silicon, VHF-PECVD, optical emission spectroscopy

中图分类号:  (Elemental semiconductors and insulators)

  • 78.30.Am
68.55.A- (Nucleation and growth) 68.55.-a (Thin film structure and morphology) 68.55.Ln (Defects and impurities: doping, implantation, distribution, concentration, etc.) 78.66.Db (Elemental semiconductors and insulators) 81.15.Gh (Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.))