中国物理B ›› 2006, Vol. 15 ›› Issue (11): 2710-2712.doi: 10.1088/1009-1963/15/11/041

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Induced growth of high quality ZnO thin filmsby crystallized amorphous ZnO

宋立军1, 吕有明2, 李守春3, 田云霞3, 刘嘉宜3, 王连元3, 王志军4   

  1. (1)Dean Office, Changchun University, Changchun 130022, China; (2)Laboratory of Excited State Processes of Chinese Academy of Sciences, Changchun Institute of Optics,vs-1mm Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130033, China; (3)Physics College of Jilin University, Changchun 130026, China; (4)Physics College of Jilin University, Changchun 130026, China;Department of Materials Science and Engineering, Kyoto University, Sakyo, Kyoto 606-8501, Japan
  • 收稿日期:2006-03-09 修回日期:2006-04-22 出版日期:2006-11-20 发布日期:2006-11-20
  • 基金资助:
    Project supported by the ``863" High Technology Research Program in China (Grant No 2001AA311120), the National Natural Science Foundation of China (Grant No 60278031), the Innovation Project of Chinese Academy of Sciences, the Jilin Province Science and Technology Development Program Project of China (Grant No 20040564) and the Young Innovation Function of the Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences (Grant No Q03M23Z).

Induced growth of high quality ZnO thin filmsby crystallized amorphous ZnO

Wang Zhi-Jun(王志军)a)b)†, Song Li-Jun(宋立军)c), Li Shou-Chun(李守春)a)‡, Lu You-Ming(吕有明)d), Tian Yun-Xia(田云霞)a), Liu Jia-Yi(刘嘉宜)a), and Wang Lian-Yuan(王连元)a)   

  1. a Physics College of Jilin University, Changchun 130026, China; b Department of Materials Science and Engineering, Kyoto University, Sakyo, Kyoto 606-8501, Japan; c Dean Office, Changchun University, Changchun 130022, China; d Laboratory of Excited State Processes of Chinese Academy of Sciences, Changchun Institute of Optics, vs-1mm Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130033, China
  • Received:2006-03-09 Revised:2006-04-22 Online:2006-11-20 Published:2006-11-20
  • Supported by:
    Project supported by the ``863" High Technology Research Program in China (Grant No 2001AA311120), the National Natural Science Foundation of China (Grant No 60278031), the Innovation Project of Chinese Academy of Sciences, the Jilin Province Science and Technology Development Program Project of China (Grant No 20040564) and the Young Innovation Function of the Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences (Grant No Q03M23Z).

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摘要： This paper reports the induced growth of high quality ZnO thin film by crystallized amorphous ZnO. Firstly amorphous ZnO was prepared by solid-state pyrolytic reaction, then by taking crystallized amorphous ZnO as seeds (buffer layer), ZnO thin films have been grown in diethyene glycol solution of zinc acetate at 80℃. X-ray Diffraction curve indicates that the films were preferentially oriented [001] out-of-plane direction of the ZnO. Atomic force microscopy and scanning electron microscopy were used to evaluate the surface morphology of the ZnO thin film. Photoluminescence spectrum exhibits a strong ultraviolet emission while the visible emission is very weak. The results indicate that high quality ZnO thin film was obtained.

关键词: amorphous ZnO, Induced growth, ZnO thin films

Abstract: This paper reports the induced growth of high quality ZnO thin film by crystallized amorphous ZnO. Firstly amorphous ZnO was prepared by solid-state pyrolytic reaction, then by taking crystallized amorphous ZnO as seeds (buffer layer), ZnO thin films have been grown in diethyene glycol solution of zinc acetate at 80℃. X-ray Diffraction curve indicates that the films were preferentially oriented [001] out-of-plane direction of the ZnO. Atomic force microscopy and scanning electron microscopy were used to evaluate the surface morphology of the ZnO thin film. Photoluminescence spectrum exhibits a strong ultraviolet emission while the visible emission is very weak. The results indicate that high quality ZnO thin film was obtained.

Key words: amorphous ZnO, Induced growth, ZnO thin films

中图分类号:  (Nucleation and growth)

  • 68.55.A-
68.37.Hk (Scanning electron microscopy (SEM) (including EBIC)) 68.37.Ps (Atomic force microscopy (AFM)) 78.55.Et (II-VI semiconductors) 78.66.Hf (II-VI semiconductors)