中国物理B ›› 2023, Vol. 32 ›› Issue (9): 98501-098501.doi: 10.1088/1674-1056/acc8c0

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Analytical workload dependence of self-heating effect for SOI MOSFETs considering two-stage heating process

Yi-Fan Li(李逸帆)1,2,3, Tao Ni(倪涛)1,3, Xiao-Jing Li(李晓静)1,3, Juan-Juan Wang(王娟娟)1,3, Lin-Chun Gao(高林春)1,3, Jian-Hui Bu(卜建辉)1,3, Duo-Li Li(李多力)1,3, Xiao-Wu Cai(蔡小五)1,3, Li-Da Xu(许立达)1,2,3, Xue-Qin Li(李雪勤)1,2,3, Run-Jian Wang(王润坚)1,2,3, Chuan-Bin Zeng(曾传滨)1,3,†, Bo Li(李博)1,3, Fa-Zhan Zhao(赵发展)1,3, Jia-Jun Luo(罗家俊)1,3, and Zheng-Sheng Han(韩郑生)1,2,3   

  1. 1 Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China;
    2 University of Chinese Academy of Sciences, Beijing 100049, China;
    3 Key Laboratory of Science and Technology on Silicon Devices, Chinese Academy of Sciences, Beijing 100029, China
  • 收稿日期:2023-01-10 修回日期:2023-03-13 接受日期:2023-03-30 发布日期:2023-09-01
  • 通讯作者: Chuan-Bin Zeng E-mail:chbzeng@ime.ac.cn
  • 基金资助:
    Project supported by the National Natural Science Foundation of China (Grant Nos. 52161160330 and U2230402).

Analytical workload dependence of self-heating effect for SOI MOSFETs considering two-stage heating process

Yi-Fan Li(李逸帆)1,2,3, Tao Ni(倪涛)1,3, Xiao-Jing Li(李晓静)1,3, Juan-Juan Wang(王娟娟)1,3, Lin-Chun Gao(高林春)1,3, Jian-Hui Bu(卜建辉)1,3, Duo-Li Li(李多力)1,3, Xiao-Wu Cai(蔡小五)1,3, Li-Da Xu(许立达)1,2,3, Xue-Qin Li(李雪勤)1,2,3, Run-Jian Wang(王润坚)1,2,3, Chuan-Bin Zeng(曾传滨)1,3,†, Bo Li(李博)1,3, Fa-Zhan Zhao(赵发展)1,3, Jia-Jun Luo(罗家俊)1,3, and Zheng-Sheng Han(韩郑生)1,2,3   

  1. 1 Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China;
    2 University of Chinese Academy of Sciences, Beijing 100049, China;
    3 Key Laboratory of Science and Technology on Silicon Devices, Chinese Academy of Sciences, Beijing 100029, China
  • Received:2023-01-10 Revised:2023-03-13 Accepted:2023-03-30 Published:2023-09-01
  • Contact: Chuan-Bin Zeng E-mail:chbzeng@ime.ac.cn
  • Supported by:
    Project supported by the National Natural Science Foundation of China (Grant Nos. 52161160330 and U2230402).

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摘要： Dynamic self-heating effect (SHE) of silicon-on-insulator (SOI) MOSFET is comprehensively evaluated by ultrafast pulsed I-V measurement in this work. It is found for the first time that the SHE complete heating response and cooling response of SOI MOSFETs are conjugated, with two-stage curves shown. We establish the effective thermal transient response model with stage superposition corresponding to the heating process. The systematic study of SHE dependence on workload shows that frequency and duty cycle have more significant effect on SHE in first-stage heating process than in the second stage. In the first-stage heating process, the peak lattice temperature and current oscillation amplitude decrease by more than 25 K and 4% with frequency increasing to 10 MHz, and when duty cycle is reduced to 25%, the peak lattice temperature drops to 306 K and current oscillation amplitude decreases to 0.77%. Finally, the investigation of two-stage (heating and cooling) process provides a guideline for the unified optimization of dynamic SHE in terms of workload. As the operating frequency is raised to GHz, the peak temperature depends on duty cycle, and self-heating oscillation is completely suppressed.

关键词: self-heating effect (SHE), silicon-on-insulator (SOI) MOSFETs, thermal transient response, workload

Abstract: Dynamic self-heating effect (SHE) of silicon-on-insulator (SOI) MOSFET is comprehensively evaluated by ultrafast pulsed I-V measurement in this work. It is found for the first time that the SHE complete heating response and cooling response of SOI MOSFETs are conjugated, with two-stage curves shown. We establish the effective thermal transient response model with stage superposition corresponding to the heating process. The systematic study of SHE dependence on workload shows that frequency and duty cycle have more significant effect on SHE in first-stage heating process than in the second stage. In the first-stage heating process, the peak lattice temperature and current oscillation amplitude decrease by more than 25 K and 4% with frequency increasing to 10 MHz, and when duty cycle is reduced to 25%, the peak lattice temperature drops to 306 K and current oscillation amplitude decreases to 0.77%. Finally, the investigation of two-stage (heating and cooling) process provides a guideline for the unified optimization of dynamic SHE in terms of workload. As the operating frequency is raised to GHz, the peak temperature depends on duty cycle, and self-heating oscillation is completely suppressed.

Key words: self-heating effect (SHE), silicon-on-insulator (SOI) MOSFETs, thermal transient response, workload

中图分类号:  (Semiconductor-device characterization, design, and modeling)

  • 85.30.De
73.40.Qv (Metal-insulator-semiconductor structures (including semiconductor-to-insulator))