A 4H-SiC trench IGBT with controllable hole-extracting path for low loss

doi:10.1088/1674-1056/ac8722

中国物理B ›› 2023, Vol. 32 ›› Issue (4): 48503-048503.doi: 10.1088/1674-1056/ac8722

A 4H-SiC trench IGBT with controllable hole-extracting path for low loss

Lijuan Wu(吴丽娟)^†, Heng Liu(刘恒), Xuanting Song(宋宣廷), Xing Chen(陈星), Jinsheng Zeng(曾金胜), Tao Qiu(邱滔), and Banghui Zhang(张帮会)

Hunan Provincial Key Laboratory of Flexible Electronic Materials Genome Engineering, Changsha University of Science&Technology, Changsha 410114, China

收稿日期:2022-04-15 修回日期:2022-07-04 接受日期:2022-08-05 出版日期:2023-03-10 发布日期:2023-03-23
通讯作者: Lijuan Wu E-mail:413675452@qq.com
基金资助:
Project supported by the Hunan Provincial Natural Science Foundation of China (Grant No. 2021JJ30738), Scientific Research Fund of Hunan Provincial Education Department (Grant No. 19K001), and Hunan Provincial Key Laboratory of Flexible Electronic Materials Genome Engineering's Open Fund Project-2020 (Grant No. 202016).

A 4H-SiC trench IGBT with controllable hole-extracting path for low loss

Lijuan Wu(吴丽娟)^†, Heng Liu(刘恒), Xuanting Song(宋宣廷), Xing Chen(陈星), Jinsheng Zeng(曾金胜), Tao Qiu(邱滔), and Banghui Zhang(张帮会)

Hunan Provincial Key Laboratory of Flexible Electronic Materials Genome Engineering, Changsha University of Science&Technology, Changsha 410114, China

Received:2022-04-15 Revised:2022-07-04 Accepted:2022-08-05 Online:2023-03-10 Published:2023-03-23
Contact: Lijuan Wu E-mail:413675452@qq.com
Supported by:
Project supported by the Hunan Provincial Natural Science Foundation of China (Grant No. 2021JJ30738), Scientific Research Fund of Hunan Provincial Education Department (Grant No. 19K001), and Hunan Provincial Key Laboratory of Flexible Electronic Materials Genome Engineering's Open Fund Project-2020 (Grant No. 202016).

摘要/Abstract

摘要： A novel 4H-SiC trench insulated gate bipolar transistor (IGBT) with a controllable hole-extracting (CHE) path is proposed and investigated in this paper. The CHE path is controlled by metal semiconductor gate (MES gate) and metal oxide semiconductor gate (MOS gate) in the p-shield region. The grounded p-shield region can significantly suppress the high electric field around gate oxide in SiC devices, but it weakens the conductivity modulation in the SiC trench IGBT by rapidly sweeping out holes. This effect can be eliminated by introducing the CHE path. The CHE path is pinched off by the high gate bias voltage at on-state to maintain high conductivity modulation and obtain a comparatively low on-state voltage ($V_{\rm ON}$). During the turn-off transient, the CHE path is formed, which contributes to a decreased turn-off loss ($E_{\rm OFF}$). Based on numerical simulation, the $E_{\rm OFF}$ of the proposed IGBT is reduced by 89% compared with the conventional IGBT at the same $V_{\rm ON}$ and the $V_{\rm ON}$ of the proposed IGBT is reduced by 50% compared to the grounded p-shield IGBT at the same $E_{\rm OFF}$. In addition, the average power reduction for the proposed device can be 51.0% to 81.7% and 58.2% to 72.1% with its counterparts at a wide frequency range of 500 Hz to 10 kHz, revealing a great improvement of frequency characteristics.

关键词: controllable hole-extracting path, energy loss, frequency characteristics, SiC insulated gate bipolar transistor (IGBT)

Abstract: A novel 4H-SiC trench insulated gate bipolar transistor (IGBT) with a controllable hole-extracting (CHE) path is proposed and investigated in this paper. The CHE path is controlled by metal semiconductor gate (MES gate) and metal oxide semiconductor gate (MOS gate) in the p-shield region. The grounded p-shield region can significantly suppress the high electric field around gate oxide in SiC devices, but it weakens the conductivity modulation in the SiC trench IGBT by rapidly sweeping out holes. This effect can be eliminated by introducing the CHE path. The CHE path is pinched off by the high gate bias voltage at on-state to maintain high conductivity modulation and obtain a comparatively low on-state voltage ($V_{\rm ON}$). During the turn-off transient, the CHE path is formed, which contributes to a decreased turn-off loss ($E_{\rm OFF}$). Based on numerical simulation, the $E_{\rm OFF}$ of the proposed IGBT is reduced by 89% compared with the conventional IGBT at the same $V_{\rm ON}$ and the $V_{\rm ON}$ of the proposed IGBT is reduced by 50% compared to the grounded p-shield IGBT at the same $E_{\rm OFF}$. In addition, the average power reduction for the proposed device can be 51.0% to 81.7% and 58.2% to 72.1% with its counterparts at a wide frequency range of 500 Hz to 10 kHz, revealing a great improvement of frequency characteristics.

Key words: controllable hole-extracting path, energy loss, frequency characteristics, SiC insulated gate bipolar transistor (IGBT)

中图分类号: (Semiconductor-device characterization, design, and modeling)

85.30.De

85.30.Tv (Field effect devices) 85.30.Pq (Bipolar transistors)

Lijuan Wu(吴丽娟), Heng Liu(刘恒), Xuanting Song(宋宣廷), Xing Chen(陈星), Jinsheng Zeng(曾金胜), Tao Qiu(邱滔), and Banghui Zhang(张帮会). A 4H-SiC trench IGBT with controllable hole-extracting path for low loss[J]. 中国物理B, 2023, 32(4): 48503-048503.

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A 4H-SiC trench IGBT with controllable hole-extracting path for low loss

A 4H-SiC trench IGBT with controllable hole-extracting path for low loss

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