中国物理B ›› 2023, Vol. 32 ›› Issue (10): 108504-108504.doi: 10.1088/1674-1056/acc44d

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Investigation of Ga2O3/diamond heterostructure solar-blind avalanche photodiode via TCAD simulation

Dun-Zhou Xu(许敦洲)1,2, Peng Jin(金鹏)1,2,†, Peng-Fei Xu(徐鹏飞)1,2, Meng-Yang Feng(冯梦阳)1,2,3, Ju Wu(吴巨)1,2, and Zhan-Guo Wang(王占国)1,2   

  1. 1 Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;
    2 Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China;
    3 School of Physics and Technology, Wuhan University, Wuhan 430072, China
  • 收稿日期:2022-11-07 修回日期:2023-02-07 接受日期:2023-03-15 出版日期:2023-09-21 发布日期:2023-10-08
  • 通讯作者: Peng Jin E-mail:pengjin@semi.ac.cn
  • 基金资助:
    Project supported by the National Key Research and Development Program of China (Grant No. 2022YFB3608602), the Beijing Municipal Science and Technology Commission (Grant No. Z181100004418009), and the National Natural Science Foundation of China (Grant No. 61927806).

Investigation of Ga2O3/diamond heterostructure solar-blind avalanche photodiode via TCAD simulation

Dun-Zhou Xu(许敦洲)1,2, Peng Jin(金鹏)1,2,†, Peng-Fei Xu(徐鹏飞)1,2, Meng-Yang Feng(冯梦阳)1,2,3, Ju Wu(吴巨)1,2, and Zhan-Guo Wang(王占国)1,2   

  1. 1 Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;
    2 Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China;
    3 School of Physics and Technology, Wuhan University, Wuhan 430072, China
  • Received:2022-11-07 Revised:2023-02-07 Accepted:2023-03-15 Online:2023-09-21 Published:2023-10-08
  • Contact: Peng Jin E-mail:pengjin@semi.ac.cn
  • Supported by:
    Project supported by the National Key Research and Development Program of China (Grant No. 2022YFB3608602), the Beijing Municipal Science and Technology Commission (Grant No. Z181100004418009), and the National Natural Science Foundation of China (Grant No. 61927806).

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摘要： A Ga2O3/diamond separate absorption and multiplication avalanche photodiode (SAM-APD) with mesa structure has been proposed and simulated. The simulation is based on an optimized Ga2O3/diamond heterostructure TCAD physical model, which is revised by repeated comparison with the experimental data from the literature. Since both Ga2O3 and diamond are ultra-wide bandgap semiconductor materials, the Ga2O3/diamond SAM-APD shows good solar-blind detection ability, and the corresponding cutoff wavelength is about 263 nm. The doping distribution and the electric field distribution of the SAM-APD are discussed, and the simulation results show that the gain of the designed device can reach 5×104 and the peak responsivity can reach a value as high as 78 A/W.

关键词: Ga2O3, diamond, separate absorption and multiplication avalanche photodiode (SAM-APD), solar-blind detector

Abstract: A Ga2O3/diamond separate absorption and multiplication avalanche photodiode (SAM-APD) with mesa structure has been proposed and simulated. The simulation is based on an optimized Ga2O3/diamond heterostructure TCAD physical model, which is revised by repeated comparison with the experimental data from the literature. Since both Ga2O3 and diamond are ultra-wide bandgap semiconductor materials, the Ga2O3/diamond SAM-APD shows good solar-blind detection ability, and the corresponding cutoff wavelength is about 263 nm. The doping distribution and the electric field distribution of the SAM-APD are discussed, and the simulation results show that the gain of the designed device can reach 5×104 and the peak responsivity can reach a value as high as 78 A/W.

Key words: Ga2O3, diamond, separate absorption and multiplication avalanche photodiode (SAM-APD), solar-blind detector

中图分类号:  (Optoelectronic devices)

  • 85.60.-q
85.30.-z (Semiconductor devices) 85.30.De (Semiconductor-device characterization, design, and modeling) 85.30.Mn (Junction breakdown and tunneling devices (including resonance tunneling devices))