中国物理B ›› 2023, Vol. 32 ›› Issue (11): 117302-117302.doi: 10.1088/1674-1056/acd8a5

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Low-damage interface enhancement-mode AlN/GaN high electron mobility transistors with 41.6% PAE at 30 GHz

Si-Yu Liu(刘思雨)1, Jie-Jie Zhu(祝杰杰)1,†, Jing-Shu Guo(郭静姝)1, Kai Cheng(程凯)2, Min-Han Mi(宓珉瀚)1, Ling-Jie Qin(秦灵洁)1, Bo-Wen Zhang(张博文)1, Min Tang(唐旻)3, and Xiao-Hua Ma(马晓华)1,‡   

  1. 1 Key Laboratory of Wide Bandgap Semiconductor Technology, School of Microelectronics, Xidian University, Xi'an 710071, China;
    2 Enkris Semiconductor, Inc., Suzhou 215123, China;
    3 State Key Discipline Laboratory of Radio Frequency Heterogeneous Interation, Shanghai Jiao Tong University, Shanghai 200240, China
  • 收稿日期:2023-04-13 修回日期:2023-05-04 接受日期:2023-05-25 出版日期:2023-10-16 发布日期:2023-10-24
  • 通讯作者: Jie-Jie Zhu, Xiao-Hua Ma E-mail:jjzhu@mail.xidian.edu.cn;xhma@xidian.edu.cn
  • 基金资助:
    Project supported by the Fundamental Research Funds for the National Key Research and Development Program, China (Grant No. 2020YFB1807403) and the National Natural Science Foundation of China (Grant Nos. 62174125, 62188102, and 62131014).

Low-damage interface enhancement-mode AlN/GaN high electron mobility transistors with 41.6% PAE at 30 GHz

Si-Yu Liu(刘思雨)1, Jie-Jie Zhu(祝杰杰)1,†, Jing-Shu Guo(郭静姝)1, Kai Cheng(程凯)2, Min-Han Mi(宓珉瀚)1, Ling-Jie Qin(秦灵洁)1, Bo-Wen Zhang(张博文)1, Min Tang(唐旻)3, and Xiao-Hua Ma(马晓华)1,‡   

  1. 1 Key Laboratory of Wide Bandgap Semiconductor Technology, School of Microelectronics, Xidian University, Xi'an 710071, China;
    2 Enkris Semiconductor, Inc., Suzhou 215123, China;
    3 State Key Discipline Laboratory of Radio Frequency Heterogeneous Interation, Shanghai Jiao Tong University, Shanghai 200240, China
  • Received:2023-04-13 Revised:2023-05-04 Accepted:2023-05-25 Online:2023-10-16 Published:2023-10-24
  • Contact: Jie-Jie Zhu, Xiao-Hua Ma E-mail:jjzhu@mail.xidian.edu.cn;xhma@xidian.edu.cn
  • Supported by:
    Project supported by the Fundamental Research Funds for the National Key Research and Development Program, China (Grant No. 2020YFB1807403) and the National Natural Science Foundation of China (Grant Nos. 62174125, 62188102, and 62131014).

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摘要： This paper reports a low-damage interface treatment process for AlN/GaN high electron mobility transistor (HEMT) and demonstrates the excellent power characteristics of radio-frequency (RF) enhancementmode (E-mode) AlN/GaN HEMT. An RF E-mode device with 2.9-nm-thick AlN barrier layer fabricated by remote plasma oxidation (RPO) treatment at 300 °C. The device with a gate length of 0.12-μ m has a threshold voltage (Vth) of 0.5 V, a maximum saturation current of 1.16 A/mm, a high Ion/Ioff ratio of 1× 108, and a 440-mS/mm peak transconductance. During continuous wave (CW) power testing, the device demonstrates that at 3.6 GHz, a power added efficiency is 61.9% and a power density is 1.38 W/mm, and at 30 GHz, a power added efficiency is 41.6% and a power density is 0.85 W/mm. Furthermore, the RPO treatment improves the mobility of RF E-mode AlN/GaN HEMT. All results show that the RPO processing method has good applicability to scaling ultrathin barrier E-mode AlN/GaN HEMT for 5G compliable frequency ranging from sub-6 GHz to Ka-band.

关键词: GaN, low damage, enhancement mode, power-added efficiency

Abstract: This paper reports a low-damage interface treatment process for AlN/GaN high electron mobility transistor (HEMT) and demonstrates the excellent power characteristics of radio-frequency (RF) enhancementmode (E-mode) AlN/GaN HEMT. An RF E-mode device with 2.9-nm-thick AlN barrier layer fabricated by remote plasma oxidation (RPO) treatment at 300 °C. The device with a gate length of 0.12-μ m has a threshold voltage (Vth) of 0.5 V, a maximum saturation current of 1.16 A/mm, a high Ion/Ioff ratio of 1× 108, and a 440-mS/mm peak transconductance. During continuous wave (CW) power testing, the device demonstrates that at 3.6 GHz, a power added efficiency is 61.9% and a power density is 1.38 W/mm, and at 30 GHz, a power added efficiency is 41.6% and a power density is 0.85 W/mm. Furthermore, the RPO treatment improves the mobility of RF E-mode AlN/GaN HEMT. All results show that the RPO processing method has good applicability to scaling ultrathin barrier E-mode AlN/GaN HEMT for 5G compliable frequency ranging from sub-6 GHz to Ka-band.

Key words: GaN, low damage, enhancement mode, power-added efficiency

中图分类号:  (III-V semiconductors)

  • 73.61.Ey
73.40.Qv (Metal-insulator-semiconductor structures (including semiconductor-to-insulator)) 81.65.Mq (Oxidation)