中国物理B ›› 2023, Vol. 32 ›› Issue (7): 76102-076102.doi: 10.1088/1674-1056/accb8a
Assessing high-energy x-ray and proton irradiation effects on electrical properties of P-GaN and N-GaN thin films
Aoxue Zhong(钟傲雪)1, Lei Wang(王磊)2,†, Yun Tang(唐蕴)2, Yongtao Yang(杨永涛)1, Jinjin Wang(王进进)3, Huiping Zhu(朱慧平)2, Zhenping Wu(吴真平)1, Weihua Tang(唐为华)1,‡, and Bo Li(李博)2
- 1 State Key Laboratory of Information Photonics and Optical Communications&School of Science, Beijing University of Posts and Telecommunications, Beijing 100876, China;
2 Institute of Microelectronics and Key Laboratory of Science and Technology on Silicon Devices, Chinese Academy of Sciences;University of Chinese Academy of Sciences, Beijing 100029, China;
3 School of Integrated Circuits&State Key Laboratory of Information Photonics and Optical Communications, Beijing University of Posts and Telecommunications, Beijing 100876, China
Assessing high-energy x-ray and proton irradiation effects on electrical properties of P-GaN and N-GaN thin films
Aoxue Zhong(钟傲雪)1, Lei Wang(王磊)2,†, Yun Tang(唐蕴)2, Yongtao Yang(杨永涛)1, Jinjin Wang(王进进)3, Huiping Zhu(朱慧平)2, Zhenping Wu(吴真平)1, Weihua Tang(唐为华)1,‡, and Bo Li(李博)2
- 1 State Key Laboratory of Information Photonics and Optical Communications&School of Science, Beijing University of Posts and Telecommunications, Beijing 100876, China;
2 Institute of Microelectronics and Key Laboratory of Science and Technology on Silicon Devices, Chinese Academy of Sciences;University of Chinese Academy of Sciences, Beijing 100029, China;
3 School of Integrated Circuits&State Key Laboratory of Information Photonics and Optical Communications, Beijing University of Posts and Telecommunications, Beijing 100876, China
摘要： The effects of ionizing and displacement irradiation of high-energy x-ray and 2-MeV proton on GaN thin films were investigated and compared in this study. The electrical properties of both P-GaN and N-GaN, separated from power devices, were gauged for fundamental analysis. It was found that the electrical properties of P-GaN were improved as a consequence of the disruption of the Mg-H bond induced by high-dose x-ray irradiation, as indicated by the Hall and circular transmission line model. Specifically, under a 100-Mrad(Si) x-ray dose, the specific contact resistance ρc of P-GaN decreased by 30%, and the hole carrier concentration increased significantly. Additionally, the atom displacement damage effect of a 2-MeV proton of 1×1013 p/cm2 led to a significant degradation of the electrical properties of P-GaN, while those of N-GaN remained unchanged. P-GaN was found to be more sensitive to irradiation than N-GaN thin film. The effectiveness of x-ray irradiation in enhancing the electrical properties of P-GaN thin films was demonstrated in this study.
中图分类号: (Physical radiation effects, radiation damage)
- 61.80.-x