Ferroelectricity of pristine Hf0.5Zr0.5O2 films fabricated by atomic layer deposition

doi:10.1088/1674-1056/accff3

中国物理B ›› 2023, Vol. 32 ›› Issue (10): 108102-108102.doi: 10.1088/1674-1056/accff3

Ferroelectricity of pristine Hf_0.5Zr_0.5O₂ films fabricated by atomic layer deposition

Luqiu Chen(陈璐秋)^1,2,†, Xiaoxu Zhang(张晓旭)^1,2,†, Guangdi Feng(冯光迪)^1,2, Yifei Liu(刘逸飞)¹, Shenglan Hao(郝胜兰)¹, Qiuxiang Zhu(朱秋香)^1,2,3,‡, Xiaoyu Feng(冯晓钰)¹, Ke Qu(屈可)¹, Zhenzhong Yang(杨振中)^1,§, Yuanshen Qi(祁原深)⁴, Yachin Ivry⁵, Brahim Dkhil⁶, Bobo Tian(田博博)^1,2,¶, Junhao Chu(褚君浩)^1,7,8, and Chungang Duan(段纯刚)^1,9

1 Key Laboratory of Polar Materials and Devices(MOE), Ministry of Education, Shanghai Center of Brain-inspired Intelligent Materials and Devices, Department of Electronics, East China Normal University, Shanghai 200241, China;
2 Zhejiang Laboratory, Hangzhou 310000, China;
3 Guangdong Provisional Key Laboratory of Functional Oxide Materials and Devices, Southern University of Science and Technology, Shenzhen 518055, China;
4 Department of Materials Sciences and Engineering, Guangdong Technion-Israel Institute of Technology, Shantou 515063, China;
5 Department of Materials Science and Engineering, Solid-State Institute, Technion-Israel Institute of Technology, Haifa 3200003, Israel;
6 Université Paris-Saclay, CentraleSupélec, CNRS-UMR 8580, Laboratoire Structures, Propriétés et Modélisation des Solides, Gif-sur-Yvette 91190, France;
7 State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China;
8 Institute of Optoelectronics, Fudan University, Shanghai 200433, China;
9 Collaborative Innovation Center of Extreme Optics, Shanxi University, Shanxi 030006, China

收稿日期:2023-03-25 修回日期:2023-04-22 接受日期:2023-04-25 出版日期:2023-09-21 发布日期:2023-09-27
通讯作者: Qiuxiang Zhu, Zhenzhong Yang, Bobo Tian E-mail:qxzhu@clpm.ecnu.edu.cn;zzyang@phy.ecnu.edu.cn;bbtian@ee.ecnu.edu.cn
基金资助:
Project supported by the National Key Research and Development Program of China (Grant No. 2021YFA1200700), the National Natural Science Foundation of China (Grant Nos. T2222025 and 62174053), the Open Research Projects of Zhejiang Laboratory (Grant No. 2021MD0AB03), the Shanghai Science and Technology Innovation Action Plan (Grant Nos. 21JC1402000 and 21520714100), the Guangdong Provincial Key Laboratory Program (Grant No. 2021B1212040001), and the Fundamental Research Funds for the Central Universities. Yachin Ivry acknowledges support from the Zuckerman STEM Leadership Program as well as from Pazy Research Foundation (Grant No. 149-2020).

Ferroelectricity of pristine Hf_0.5Zr_0.5O₂ films fabricated by atomic layer deposition

1 Key Laboratory of Polar Materials and Devices(MOE), Ministry of Education, Shanghai Center of Brain-inspired Intelligent Materials and Devices, Department of Electronics, East China Normal University, Shanghai 200241, China;
2 Zhejiang Laboratory, Hangzhou 310000, China;
3 Guangdong Provisional Key Laboratory of Functional Oxide Materials and Devices, Southern University of Science and Technology, Shenzhen 518055, China;
4 Department of Materials Sciences and Engineering, Guangdong Technion-Israel Institute of Technology, Shantou 515063, China;
5 Department of Materials Science and Engineering, Solid-State Institute, Technion-Israel Institute of Technology, Haifa 3200003, Israel;
6 Université Paris-Saclay, CentraleSupélec, CNRS-UMR 8580, Laboratoire Structures, Propriétés et Modélisation des Solides, Gif-sur-Yvette 91190, France;
7 State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China;
8 Institute of Optoelectronics, Fudan University, Shanghai 200433, China;
9 Collaborative Innovation Center of Extreme Optics, Shanxi University, Shanxi 030006, China

Received:2023-03-25 Revised:2023-04-22 Accepted:2023-04-25 Online:2023-09-21 Published:2023-09-27
Contact: Qiuxiang Zhu, Zhenzhong Yang, Bobo Tian E-mail:qxzhu@clpm.ecnu.edu.cn;zzyang@phy.ecnu.edu.cn;bbtian@ee.ecnu.edu.cn
Supported by:
Project supported by the National Key Research and Development Program of China (Grant No. 2021YFA1200700), the National Natural Science Foundation of China (Grant Nos. T2222025 and 62174053), the Open Research Projects of Zhejiang Laboratory (Grant No. 2021MD0AB03), the Shanghai Science and Technology Innovation Action Plan (Grant Nos. 21JC1402000 and 21520714100), the Guangdong Provincial Key Laboratory Program (Grant No. 2021B1212040001), and the Fundamental Research Funds for the Central Universities. Yachin Ivry acknowledges support from the Zuckerman STEM Leadership Program as well as from Pazy Research Foundation (Grant No. 149-2020).

摘要/Abstract

摘要： Hafnium-based ferroelectric films, remaining their ferroelectricity down to nanoscale thickness, present a promising application for low-power logic devices and nonvolatile memories. It has been appealing for researchers to reduce the required temperature to obtain the ferroelectric phase in hafnium-based ferroelectric films for applications such as flexible and wearable electronics. This work demonstrates that a remanent polarization ($P_{\rm r}$) value of $> 5 $ μC/cm$^{2}$ can be obtained in as-deposited Hf$_{0.5}$Zr$_{0.5}$O$_{2}$ (HZO) films that are fabricated by thermal atomic layer deposition (TALD) under low temperature of 250 ℃. The ferroelectric orthorhombic phase (o-phase) in the as-deposited HZO films is detected by scanning transmission electron microscopy (STEM). This low fabrication temperature further extends the compatibility of ferroelectric HZO films to flexible electronics and avoids the cost imposed by following high-temperature annealing treatments.

关键词: Hf_0.5Zr_0.5O₂ (HZO), ferroelectric, orthorhombic, without annealing

Abstract: Hafnium-based ferroelectric films, remaining their ferroelectricity down to nanoscale thickness, present a promising application for low-power logic devices and nonvolatile memories. It has been appealing for researchers to reduce the required temperature to obtain the ferroelectric phase in hafnium-based ferroelectric films for applications such as flexible and wearable electronics. This work demonstrates that a remanent polarization ($P_{\rm r}$) value of $> 5 $ μC/cm$^{2}$ can be obtained in as-deposited Hf$_{0.5}$Zr$_{0.5}$O$_{2}$ (HZO) films that are fabricated by thermal atomic layer deposition (TALD) under low temperature of 250 ℃. The ferroelectric orthorhombic phase (o-phase) in the as-deposited HZO films is detected by scanning transmission electron microscopy (STEM). This low fabrication temperature further extends the compatibility of ferroelectric HZO films to flexible electronics and avoids the cost imposed by following high-temperature annealing treatments.

Key words: Hf_0.5Zr_0.5O₂ (HZO), ferroelectric, orthorhombic, without annealing

中图分类号: (Specific materials: fabrication, treatment, testing, and analysis)

81.05.-t

77.80.-e (Ferroelectricity and antiferroelectricity) 77.55.fp (Other ferroelectric films) 85.50.-n (Dielectric, ferroelectric, and piezoelectric devices)

Luqiu Chen(陈璐秋), Xiaoxu Zhang(张晓旭), Guangdi Feng(冯光迪), Yifei Liu(刘逸飞), Shenglan Hao(郝胜兰), Qiuxiang Zhu(朱秋香), Xiaoyu Feng(冯晓钰), Ke Qu(屈可), Zhenzhong Yang(杨振中), Yuanshen Qi(祁原深), Yachin Ivry, Brahim Dkhil, Bobo Tian(田博博), Junhao Chu(褚君浩), and Chungang Duan(段纯刚). Ferroelectricity of pristine Hf_0.5Zr_0.5O₂ films fabricated by atomic layer deposition[J]. 中国物理B, 2023, 32(10): 108102-108102.

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Ferroelectricity of pristine Hf_0.5Zr_0.5O₂ films fabricated by atomic layer deposition

Ferroelectricity of pristine Hf_0.5Zr_0.5O₂ films fabricated by atomic layer deposition

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