中国物理B ›› 2023, Vol. 32 ›› Issue (4): 47702-047702.doi: 10.1088/1674-1056/ac80ab
SiC gate-controlled bipolar field effect composite transistor with polysilicon region for improving on-state current
Baoxing Duan(段宝兴)†, Kaishun Luo(罗开顺), and Yintang Yang(杨银堂)
- Key Laboratory of the Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi'an 710071, China
SiC gate-controlled bipolar field effect composite transistor with polysilicon region for improving on-state current
Baoxing Duan(段宝兴)†, Kaishun Luo(罗开顺), and Yintang Yang(杨银堂)
- Key Laboratory of the Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi'an 710071, China
摘要： A novel silicon carbide gate-controlled bipolar field effect composite transistor with polysilicon region (SiC GCBTP) is proposed. Different from the traditional electrode connection mode of SiC vertical diffused MOS (VDMOS), the P$+$ region of P-well is connected with the gate in SiC GCBTP, and the polysilicon region is added between the P$+$ region and the gate. By this method, additional minority carriers can be injected into the drift region at on-state, and the distribution of minority carriers in the drift region will be optimized, so the on-state current is increased. In terms of static characteristics, it has the same high breakdown voltage (811 V) as SiC VDMOS whose length of drift is 5.5 μm. The on-state current of SiC GCBTP is $2.47\times 10^{-3}$ A/μm ($V_{\rm G}=10$ V, $V_{\rm D}=10$ V) which is 5.7 times of that of SiC IGBT and 36.4 times of that of SiC VDMOS. In terms of dynamic characteristics, the turn-on time of SiC GCBTP is only 0.425 ns. And the turn-off time of SiC GCBTP is similar to that of SIC insulated gate bipolar transistor (IGBT), which is 114.72 ns.
中图分类号: (Elements, oxides, nitrides, borides, carbides, chalcogenides, etc.)
- 77.84.Bw