中国物理B ›› 2023, Vol. 32 ›› Issue (4): 47701-047701.doi: 10.1088/1674-1056/aca39e

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Domain size and charge defects affecting the polarization switching of antiferroelectric domains

Jinghao Zhu(朱静浩)1, Zhen Liu(刘震)2,†, Boyi Zhong(钟柏仪)3, Yaojin Wang(汪尧进)2,‡, and Baixiang Xu(胥柏香)3,§   

  1. 1 Nanjing Research Institute of Electronics Technology, Nanjing 210039, China;
    2 School of Materials Science and Engineering, Nanjing University of Science and Technology, Nanjing 210094, China;
    3 Mechanics of Functional Materials, Department of Materials Science, Technical University of Darmstadt, Darmstadt 64287, Germany
  • 收稿日期:2022-07-18 修回日期:2022-11-14 接受日期:2022-11-17 出版日期:2023-03-10 发布日期:2023-03-30
  • 通讯作者: Zhen Liu, Yaojin Wang, Baixiang Xu E-mail:liuz_hit@njust.edu.cn;yjwang@njust.edu.cn;xu@mfm.tu-darmstadt.de
  • 基金资助:
    Project supported by the Natural Science Foundation of Jiangsu Province of China (Grant No. BK20190405) and the LOEWE program of the State of Hesse, Germany, within the project FLAME (Fermi Level Engineering of Antiferroelectric Materials for Energy Storage and Insulation Systems).

Domain size and charge defects affecting the polarization switching of antiferroelectric domains

Jinghao Zhu(朱静浩)1, Zhen Liu(刘震)2,†, Boyi Zhong(钟柏仪)3, Yaojin Wang(汪尧进)2,‡, and Baixiang Xu(胥柏香)3,§   

  1. 1 Nanjing Research Institute of Electronics Technology, Nanjing 210039, China;
    2 School of Materials Science and Engineering, Nanjing University of Science and Technology, Nanjing 210094, China;
    3 Mechanics of Functional Materials, Department of Materials Science, Technical University of Darmstadt, Darmstadt 64287, Germany
  • Received:2022-07-18 Revised:2022-11-14 Accepted:2022-11-17 Online:2023-03-10 Published:2023-03-30
  • Contact: Zhen Liu, Yaojin Wang, Baixiang Xu E-mail:liuz_hit@njust.edu.cn;yjwang@njust.edu.cn;xu@mfm.tu-darmstadt.de
  • Supported by:
    Project supported by the Natural Science Foundation of Jiangsu Province of China (Grant No. BK20190405) and the LOEWE program of the State of Hesse, Germany, within the project FLAME (Fermi Level Engineering of Antiferroelectric Materials for Energy Storage and Insulation Systems).

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摘要： The switching behavior of antiferroelectric domain structures under the applied electric field is not fully understood. In this work, by using the phase field simulation, we have studied the polarization switching property of antiferroelectric domains. Our results indicate that the ferroelectric domains nucleate preferably at the boundaries of the antiferroelectric domains, and antiferroelectrics with larger initial domain sizes possess a higher coercive electric field as demonstrated by hysteresis loops. Moreover, we introduce charge defects into the sample and numerically investigate their influence. It is also shown that charge defects can induce local ferroelectric domains, which could suppress the saturation polarization and narrow the enclosed area of the hysteresis loop. Our results give insights into understanding the antiferroelectric phase transformation and optimizing the energy storage property in experiments.

关键词: antiferroelectric domains, phase field simulation, domain size, charge defects

Abstract: The switching behavior of antiferroelectric domain structures under the applied electric field is not fully understood. In this work, by using the phase field simulation, we have studied the polarization switching property of antiferroelectric domains. Our results indicate that the ferroelectric domains nucleate preferably at the boundaries of the antiferroelectric domains, and antiferroelectrics with larger initial domain sizes possess a higher coercive electric field as demonstrated by hysteresis loops. Moreover, we introduce charge defects into the sample and numerically investigate their influence. It is also shown that charge defects can induce local ferroelectric domains, which could suppress the saturation polarization and narrow the enclosed area of the hysteresis loop. Our results give insights into understanding the antiferroelectric phase transformation and optimizing the energy storage property in experiments.

Key words: antiferroelectric domains, phase field simulation, domain size, charge defects

中图分类号:  (Scaling effects)

  • 77.80.bj
77.80.Dj (Domain structure; hysteresis) 77.84.Lf (Composite materials)