中国物理B ›› 2016, Vol. 25 ›› Issue (10): 107805-107805.doi: 10.1088/1674-1056/25/10/107805

• CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES • 上一篇    下一篇

Proper In deposition amount for on-demand epitaxy of InAs/GaAs single quantum dots

Xiang-Jun Shang(尚向军), Jian-Xing Xu(徐建星), Ben Ma(马奔), Ze-Sheng Chen(陈泽升), Si-Hang Wei(魏思航), Mi-Feng Li(李密峰), Guo-Wei Zha(查国伟), Li-Chun Zhang(张立春), Ying Yu(喻颖), Hai-Qiao Ni(倪海桥), Zhi-Chuan Niu(牛智川)   

  1. 1 State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;
    2 Synergetic Innovation Center of Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei 230026, China
  • 收稿日期:2016-04-24 修回日期:2016-06-02 出版日期:2016-10-05 发布日期:2016-10-05
  • 通讯作者: Zhi-Chuan Niu E-mail:zcniu@semi.ac.cn
  • 基金资助:
    Project supported by the National Key Basic Research Program of China (Grant No. 2013CB933304), the Strategic Priority Research Program of Chinese Academy of Sciences (Grant No. XDB01010200), and the National Natural Science Foundation of China (Grant No. 65015196).

Proper In deposition amount for on-demand epitaxy of InAs/GaAs single quantum dots

Xiang-Jun Shang(尚向军)1,2, Jian-Xing Xu(徐建星)1,2, Ben Ma(马奔)1,2, Ze-Sheng Chen(陈泽升)1,2, Si-Hang Wei(魏思航)1,2, Mi-Feng Li(李密峰)1,2, Guo-Wei Zha(查国伟)1,2, Li-Chun Zhang(张立春)1,2, Ying Yu(喻颖)1,2, Hai-Qiao Ni(倪海桥)1,2, Zhi-Chuan Niu(牛智川)1,2   

  1. 1 State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;
    2 Synergetic Innovation Center of Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei 230026, China
  • Received:2016-04-24 Revised:2016-06-02 Online:2016-10-05 Published:2016-10-05
  • Contact: Zhi-Chuan Niu E-mail:zcniu@semi.ac.cn
  • Supported by:
    Project supported by the National Key Basic Research Program of China (Grant No. 2013CB933304), the Strategic Priority Research Program of Chinese Academy of Sciences (Grant No. XDB01010200), and the National Natural Science Foundation of China (Grant No. 65015196).

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摘要： The test-QD in-situ annealing method could surmount the critical nucleation condition of InAs/GaAs single quantum dots (SQDs) to raise the growth repeatability. Here, through many growth tests on rotating substrates, we develop a proper In deposition amount (θ) for SQD growth, according to the measured critical θ for test QD nucleation (θc). The proper ratio θ/θc, with a large tolerance of the variation of the real substrate temperature (Tsub), is 0.964-0.971 at the edge and >0.989 but <0.996 in the center of a 1/4-piece semi-insulating wafer, and around 0.9709 but <0.9714 in the center of a 1/4-piece N+ wafer as shown in the evolution of QD size and density as θ/θc varies. Bright SQDs with spectral lines at 905 nm-935 nm nucleate at the edge and correlate with individual 7 nm-8 nm-height QDs in atomic force microscopy, among dense 1 nm-5 nm-height small QDs with a strong spectral profile around 860 nm-880 nm. The higher Tsub in the center forms diluter, taller and uniform QDs, and very dilute SQDs for a proper θ/θc: only one 7-nm-hight SQD in 25 μm2. On a 2-inch (1 inch=2.54 cm) semi-insulating wafer, by using θ/θc = 0.961, SQDs nucleate in a circle in 22% of the whole area. More SQDs will form in the broad high-Tsub region in the center by using a proper θ/θc.

关键词: single quantum dot, proper deposition amount, on-chip distribution, height statistics, μPL spectra

Abstract: The test-QD in-situ annealing method could surmount the critical nucleation condition of InAs/GaAs single quantum dots (SQDs) to raise the growth repeatability. Here, through many growth tests on rotating substrates, we develop a proper In deposition amount (θ) for SQD growth, according to the measured critical θ for test QD nucleation (θc). The proper ratio θ/θc, with a large tolerance of the variation of the real substrate temperature (Tsub), is 0.964-0.971 at the edge and >0.989 but <0.996 in the center of a 1/4-piece semi-insulating wafer, and around 0.9709 but <0.9714 in the center of a 1/4-piece N+ wafer as shown in the evolution of QD size and density as θ/θc varies. Bright SQDs with spectral lines at 905 nm-935 nm nucleate at the edge and correlate with individual 7 nm-8 nm-height QDs in atomic force microscopy, among dense 1 nm-5 nm-height small QDs with a strong spectral profile around 860 nm-880 nm. The higher Tsub in the center forms diluter, taller and uniform QDs, and very dilute SQDs for a proper θ/θc: only one 7-nm-hight SQD in 25 μm2. On a 2-inch (1 inch=2.54 cm) semi-insulating wafer, by using θ/θc = 0.961, SQDs nucleate in a circle in 22% of the whole area. More SQDs will form in the broad high-Tsub region in the center by using a proper θ/θc.

Key words: single quantum dot, proper deposition amount, on-chip distribution, height statistics, μPL spectra

中图分类号:  (Quantum dots)

  • 78.67.Hc
81.07.Ta (Quantum dots) 78.55.Cr (III-V semiconductors) 73.21.La (Quantum dots)