Influence comparison of N2 and NH3 nitrogen sources on AlN films grown by halide vapor phase epitaxy

doi:10.1088/1674-1056/ab90ed

中国物理B ›› 2020, Vol. 29 ›› Issue (7): 76802-076802.doi: 10.1088/1674-1056/ab90ed

• CONDENSED MATTER: STRUCTURAL, MECHANICAL, AND THERMAL PROPERTIES • 上一篇下一篇

Influence comparison of N₂ and NH₃ nitrogen sources on AlN films grown by halide vapor phase epitaxy

Jing-Jing Chen(陈晶晶), Jun Huang(黄俊), Xu-Jun Su(苏旭军), Mu-Tong Niu(牛牧童), Ke Xu(徐科)

1 Suzhou Institute of Nano-tech and Nano-bionics, Chinese Academy of Sciences, Suzhou 215123, China;
2 School of Physical Science and Technology, ShanghaiTech University, Shanghai 201210, China;
3 Suzhou Nanowin Science and Technology Co., Ltd., Suzhou 215123, China

收稿日期:2020-01-20 修回日期:2020-04-09 出版日期:2020-07-05 发布日期:2020-07-05
通讯作者: Ke Xu E-mail:kxu2006@sinano.ac.cn
基金资助:
Project supported by the National Key R&D Program of China (Grant No. 2017YFB0404100).

Influence comparison of N₂ and NH₃ nitrogen sources on AlN films grown by halide vapor phase epitaxy

Jing-Jing Chen(陈晶晶)^1,2, Jun Huang(黄俊)¹, Xu-Jun Su(苏旭军)¹, Mu-Tong Niu(牛牧童)¹, Ke Xu(徐科)^1,2,3

1 Suzhou Institute of Nano-tech and Nano-bionics, Chinese Academy of Sciences, Suzhou 215123, China;
2 School of Physical Science and Technology, ShanghaiTech University, Shanghai 201210, China;
3 Suzhou Nanowin Science and Technology Co., Ltd., Suzhou 215123, China

Received:2020-01-20 Revised:2020-04-09 Online:2020-07-05 Published:2020-07-05
Contact: Ke Xu E-mail:kxu2006@sinano.ac.cn
Supported by:
Project supported by the National Key R&D Program of China (Grant No. 2017YFB0404100).

摘要/Abstract

摘要： A comparison of the nitrogen sources (N₂ and NH₃) influence on AlN films grown by high-temperature halide vapor phase epitaxy (HVPE) is reported. The x-ray rocking curves (XRCs) indicate that the full width at half maximum (FWHM) of (0002) plane for AlN films using N₂ as nitrogen source is generally smaller than that using NH₃. Optical microscope and atomic force microscope (AFM) results show that it is presently still more difficult to control the crack and surface morphology of AlN films with thicknesses of 5-10 μm using N₂ as the nitrogen source compared to that using NH₃. Compared with one-step growth, two-step growth strategy has been proved more effective in stress control and reducing the density of threading dislocations for AlN epilayers using N₂ as the nitrogen source. These investigations reveal that using N₂ as nitrogen source in HVPE growth of AlN is immature at present, but exhibits great potential.

关键词: aluminum nitride, halide vapor phase epitaxy, surface structure, nitrogen source

Abstract: A comparison of the nitrogen sources (N₂ and NH₃) influence on AlN films grown by high-temperature halide vapor phase epitaxy (HVPE) is reported. The x-ray rocking curves (XRCs) indicate that the full width at half maximum (FWHM) of (0002) plane for AlN films using N₂ as nitrogen source is generally smaller than that using NH₃. Optical microscope and atomic force microscope (AFM) results show that it is presently still more difficult to control the crack and surface morphology of AlN films with thicknesses of 5-10 μm using N₂ as the nitrogen source compared to that using NH₃. Compared with one-step growth, two-step growth strategy has been proved more effective in stress control and reducing the density of threading dislocations for AlN epilayers using N₂ as the nitrogen source. These investigations reveal that using N₂ as nitrogen source in HVPE growth of AlN is immature at present, but exhibits great potential.

Key words: aluminum nitride, halide vapor phase epitaxy, surface structure, nitrogen source

中图分类号: (Thin film structure and morphology)

68.55.-a

81.15.-z (Methods of deposition of films and coatings; film growth and epitaxy) 61.72.-y (Defects and impurities in crystals; microstructure)

陈晶晶, 黄俊, 苏旭军, 牛牧童, 徐科. Influence comparison of N₂ and NH₃ nitrogen sources on AlN films grown by halide vapor phase epitaxy[J]. 中国物理B, 2020, 29(7): 76802-076802.

Jing-Jing Chen(陈晶晶), Jun Huang(黄俊), Xu-Jun Su(苏旭军), Mu-Tong Niu(牛牧童), Ke Xu(徐科). Influence comparison of N₂ and NH₃ nitrogen sources on AlN films grown by halide vapor phase epitaxy[J]. Chin. Phys. B, 2020, 29(7): 76802-076802.

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Influence comparison of N₂ and NH₃ nitrogen sources on AlN films grown by halide vapor phase epitaxy

Influence comparison of N₂ and NH₃ nitrogen sources on AlN films grown by halide vapor phase epitaxy

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