Performance of La2O3/InAlN/GaN metal–oxide–semiconductor high electron mobility transistors

doi:10.1088/1674-1056/21/6/067305

中国物理B ›› 2012, Vol. 21 ›› Issue (6): 67305-067305.doi: 10.1088/1674-1056/21/6/067305

• CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES • 上一篇下一篇

Performance of La₂O₃/InAlN/GaN metal–oxide–semiconductor high electron mobility transistors

冯倩^{a b}, 李倩^{a b}, 邢韬^{a b}, 王强^{a b}, 张进成^{a b}, 郝跃^{a b}

a. School of Microelectronics, Xidian University, Xi'an 710071, China;
b. Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices, Xidian University, Xi'an 710071, China

收稿日期:2011-08-05 修回日期:2011-12-15 出版日期:2012-05-01 发布日期:2012-05-01
基金资助:
Project supported by the Basic Science Research Fund for the Central Universities (Grant No. K50511250009).

Performance of La₂O₃/InAlN/GaN metal–oxide–semiconductor high electron mobility transistors

Feng Qian(冯倩)^a)b)†, Li Qian(李倩)^a)b), Xing Tao(邢韬)^a)b) Wang Qiang(王强)^a)b), Zhang Jin-Cheng(张进成)^a)b), and Hao Yue(郝跃)^a)b)

a. School of Microelectronics, Xidian University, Xi'an 710071, China;
b. Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices, Xidian University, Xi'an 710071, China

Received:2011-08-05 Revised:2011-12-15 Online:2012-05-01 Published:2012-05-01
Contact: Feng Qian E-mail:qfeng@mail.xidian.edu.cn
Supported by:
Project supported by the Basic Science Research Fund for the Central Universities (Grant No. K50511250009).

摘要/Abstract

摘要： We report on the performance of La₂O₃/InAlN/GaN metal-oxide-semiconductor high electron mobility transistors (MOSHEMTs) and InAlN/GaN high electron mobility transistors (HEMTs). The MOSHEMT presents a maximum drain current of 961 mA/mm at V_gs=4 V and a maximum transconductance of 130 mS/mm compared with 710 mA/mm at V_gs=1 V and 131 mS/mm for the HEMT device, while the gate leakage current in the reverse direction could be reduced by four orders of magnitude. Compared with the HEMT device of a similar geometry, MOSHEMT presents a large gate voltage swing and negligible current collapse.

关键词: indium aluminum nitride, metal-oxide-semiconductor high electron mobility transistor, lanthanum oxide

Abstract: We report on the performance of La₂O₃/InAlN/GaN metal-oxide-semiconductor high electron mobility transistors (MOSHEMTs) and InAlN/GaN high electron mobility transistors (HEMTs). The MOSHEMT presents a maximum drain current of 961 mA/mm at V_gs=4 V and a maximum transconductance of 130 mS/mm compared with 710 mA/mm at V_gs=1 V and 131 mS/mm for the HEMT device, while the gate leakage current in the reverse direction could be reduced by four orders of magnitude. Compared with the HEMT device of a similar geometry, MOSHEMT presents a large gate voltage swing and negligible current collapse.

Key words: indium aluminum nitride, metal-oxide-semiconductor high electron mobility transistor, lanthanum oxide

中图分类号: (Metal-insulator-semiconductor structures (including semiconductor-to-insulator))

73.40.Qv

73.61.Ey (III-V semiconductors) 85.30.Tv (Field effect devices)

冯倩, 李倩, 邢韬, 王强, 张进成, 郝跃. Performance of La₂O₃/InAlN/GaN metal–oxide–semiconductor high electron mobility transistors[J]. 中国物理B, 2012, 21(6): 67305-067305.

Feng Qian(冯倩), Li Qian(李倩), Xing Tao(邢韬) Wang Qiang(王强), Zhang Jin-Cheng(张进成), and Hao Yue(郝跃) . Performance of La₂O₃/InAlN/GaN metal–oxide–semiconductor high electron mobility transistors[J]. Chin. Phys. B, 2012, 21(6): 67305-067305.

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Performance of La₂O₃/InAlN/GaN metal–oxide–semiconductor high electron mobility transistors

Performance of La₂O₃/InAlN/GaN metal–oxide–semiconductor high electron mobility transistors

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