Total dose test with γ-ray for silicon single photon avalanche diodes

doi:10.1088/1674-1056/ab9286

中国物理B ›› 2020, Vol. 29 ›› Issue (8): 88501-088501.doi: 10.1088/1674-1056/ab9286

• SPECIAL TOPIC—Ultracold atom and its application in precision measurement • 上一篇下一篇

Total dose test with γ-ray for silicon single photon avalanche diodes

Qiaoli Liu(刘巧莉), Haiyan Zhang(张海燕), Lingxiang Hao(郝凌翔), Anqi Hu(胡安琪), Guang Wu(吴光), Xia Guo(郭霞)

1 School of Information, Beijing University of Technology, Beijing 100124, China;
2 School of Electronic Engineering, State Key Laboratory for Information Photonics and Optical Communications, Beijing University of Posts and Telecommunications, Beijing 100876, China;
3 State Key Laboratory of Precision Spectroscopy, East China Normal University, Shanghai 200062, China

收稿日期:2019-02-15 修回日期:2020-04-23 出版日期:2020-08-05 发布日期:2020-08-05
通讯作者: Xia Guo E-mail:guox@bupt.edu.cn
基金资助:
Project supported by the National Key Research and Development Program of China (Grant No. 2017YFF0104801).

Total dose test with γ-ray for silicon single photon avalanche diodes

Qiaoli Liu(刘巧莉)^1,2, Haiyan Zhang(张海燕)³, Lingxiang Hao(郝凌翔)², Anqi Hu(胡安琪)², Guang Wu(吴光)³, Xia Guo(郭霞)²

1 School of Information, Beijing University of Technology, Beijing 100124, China;
2 School of Electronic Engineering, State Key Laboratory for Information Photonics and Optical Communications, Beijing University of Posts and Telecommunications, Beijing 100876, China;
3 State Key Laboratory of Precision Spectroscopy, East China Normal University, Shanghai 200062, China

Received:2019-02-15 Revised:2020-04-23 Online:2020-08-05 Published:2020-08-05
Contact: Xia Guo E-mail:guox@bupt.edu.cn
Supported by:
Project supported by the National Key Research and Development Program of China (Grant No. 2017YFF0104801).

摘要/Abstract

摘要： Gamma-ray (γ-ray) radiation for silicon single photon avalanche diodes (Si SPADs) is evaluated, with total dose of 100 krad(Si) and dose rate of 50 rad(Si)/s by using ⁶⁰Co as the γ-ray radiation source. The breakdown voltage, photocurrent, and gain have no obvious change after the radiation. However, both the leakage current and dark count rate increase by about one order of magnitude above the values before the radiation. Temperature-dependent current-voltage measurement results indicate that the traps caused by radiation function as generation and recombination centers. Both leakage current and dark count rate can be almost recovered after annealing at 200℃ for about 2 hours, which verifies the radiation damage mechanics.

关键词: gamma-ray radiation, silicon single photon avalanche diode (Si SPAD), radiation damage

Abstract: Gamma-ray (γ-ray) radiation for silicon single photon avalanche diodes (Si SPADs) is evaluated, with total dose of 100 krad(Si) and dose rate of 50 rad(Si)/s by using ⁶⁰Co as the γ-ray radiation source. The breakdown voltage, photocurrent, and gain have no obvious change after the radiation. However, both the leakage current and dark count rate increase by about one order of magnitude above the values before the radiation. Temperature-dependent current-voltage measurement results indicate that the traps caused by radiation function as generation and recombination centers. Both leakage current and dark count rate can be almost recovered after annealing at 200℃ for about 2 hours, which verifies the radiation damage mechanics.

Key words: gamma-ray radiation, silicon single photon avalanche diode (Si SPAD), radiation damage

中图分类号: (Semiconductor-device characterization, design, and modeling)

85.30.De

85.60.Dw (Photodiodes; phototransistors; photoresistors) 85.60.Gz (Photodetectors (including infrared and CCD detectors))

刘巧莉, 张海燕, 郝凌翔, 胡安琪, 吴光, 郭霞. Total dose test with γ-ray for silicon single photon avalanche diodes[J]. 中国物理B, 2020, 29(8): 88501-088501.

Qiaoli Liu(刘巧莉), Haiyan Zhang(张海燕), Lingxiang Hao(郝凌翔), Anqi Hu(胡安琪), Guang Wu(吴光), Xia Guo(郭霞). Total dose test with γ-ray for silicon single photon avalanche diodes[J]. Chin. Phys. B, 2020, 29(8): 88501-088501.

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Total dose test with γ-ray for silicon single photon avalanche diodes

Total dose test with γ-ray for silicon single photon avalanche diodes

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