中国物理B ›› 2008, Vol. 17 ›› Issue (12): 4580-4584.doi: 10.1088/1674-1056/17/12/041
• CONDENSED MATTER: STRUCTURAL, MECHANICAL, AND THERMAL PROPERTIES • 上一篇 下一篇
秦志辉, 时东霞, 高鸿钧
Qin Zhi-Hui (秦志辉), Shi Dong-Xia (时东霞), Gao Hong-Jun (高鸿钧)
摘要: Scanning tunneling microscopy is utilized to investigate the local-bias- voltage-dependent transformation between (2x1) and c(4x2) structures on Ge(001) surfaces, which is reversibly observed at room temperature and a critical bias voltage of -0.80V. Similar transformation is also found on an epitaxial Ge islands but at a slightly different critical bias voltage of -1.00V. It is found that the interaction between the topmost atoms on the STM tip and the atoms of the dimers, and the pinning effect induced by Sb atoms, the vacancies or the epitaxial clusters, can drive the structural transformation at the critical bias voltage.
中图分类号: (Phase transitions and critical phenomena)