›› 2014, Vol. 23 ›› Issue (12): 126104-126104.doi: 10.1088/1674-1056/23/12/126104
• CONDENSED MATTER: STRUCTURAL, MECHANICAL, AND THERMAL PROPERTIES • 上一篇 下一篇
雷红文a b c, 阎大伟a, 张红b d, 王雪敏a c, 姚刚a, 吴卫东a c, 赵妍a
Lei Hong-Wen (雷红文)a b c, Yan Da-Wei (阎大伟)a, Zhang Hong (张红)b d, Wang Xue-Min (王雪敏)a c, Yao Gang (姚刚)a, Wu Wei-Dong (吴卫东)a c, Zhao Yan (赵妍)a
摘要: Zn1-xCdxO films are grown on c-sapphire substrates by laser molecular beam epitaxy (LMBE) at different temperatures. Their crystallographic structures, compositions, surface electronic structures are investigated. The a-axis lattice constant of Zn0.95Cd0.05O is 3.20 Å. Moreover, the epitaxial relationship shows a 30°-in-plane rotation of the film with respect to the c-sapphire substrate. When the substrate temperatures arrives at 500 ℃, the in situ reflection high-energy electron diffraction (RHEED) pattern of ZnCdO film shows sharp streaky pattern. The maximum Cd content of ZnCdO film grown at low substrate temperatures increases up to about 29.6 at.%, which is close to that of the ceramic target. In situ ultraviolet photoelectron spectroscopy (UPS) measurements demonstrate that ZnCdO film exhibits intense peaks at 4.7 eV and 10.7 eV below the Fermi level, which are assigned to the O 2p and Zn 3p states. Energetic distance between Zn 3d and Cd 4d is 0.60 eV. Above 470 nm, the thin film shows excellent optical transmission.
中图分类号: (Alloys )