中国物理B ›› 2008, Vol. 17 ›› Issue (3): 1055-1059.doi: 10.1088/1674-1056/17/3/051
秦志辉, 时东霞, 庞世瑾, 高鸿钧
Qin Zhi-Hui(秦志辉), Shi Dong-Xia(时东霞), Pang Shi-Jin(庞世瑾), and Gao Hong-Jun(高鸿钧)†
摘要: Different In/Ge(001) nanostructures have been obtained by annealing the samples at 320\du\ with different coverages of In. Annealing a sample with a critical coverage of 2.1 monolayer of In, different In/Ge(001) nanostructures can be obtained at different temperatures. It is found that thermal annealing treatments first make In atoms form elongated Ge{\{}103{\}}-faceted In-clusters, which will grow wider and longer with increasing temperature, and finally cover the surface completely.
中图分类号: (Methods of micro- and nanofabrication and processing)