中国物理B ›› 2008, Vol. 17 ›› Issue (3): 1055-1059.doi: 10.1088/1674-1056/17/3/051

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STM study of In nanostructures formation on Ge(001) surface at different coverages and temperatures

秦志辉, 时东霞, 庞世瑾, 高鸿钧   

  1. Nanoscale Physics and Devices Laboratory, Institute of Physics,Chinese Academy of Sciences, Beijing 100080, China
  • 收稿日期:2007-01-09 修回日期:2007-09-28 出版日期:2008-03-04 发布日期:2008-03-04
  • 基金资助:
    STM study of In nanostructures formation on Ge(001)\\[1.8mm] surface at different coverages and temperatures

STM study of In nanostructures formation on Ge(001) surface at different coverages and temperatures

Qin Zhi-Hui(秦志辉), Shi Dong-Xia(时东霞), Pang Shi-Jin(庞世瑾), and Gao Hong-Jun(高鸿钧)†   

  1. Nanoscale Physics and Devices Laboratory, Institute of Physics,Chinese Academy of Sciences, Beijing 100080, China
  • Received:2007-01-09 Revised:2007-09-28 Online:2008-03-04 Published:2008-03-04
  • Supported by:
    STM study of In nanostructures formation on Ge(001)\\[1.8mm] surface at different coverages and temperatures

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摘要： Different In/Ge(001) nanostructures have been obtained by annealing the samples at 320\du\ with different coverages of In. Annealing a sample with a critical coverage of 2.1 monolayer of In, different In/Ge(001) nanostructures can be obtained at different temperatures. It is found that thermal annealing treatments first make In atoms form elongated Ge{\{}103{\}}-faceted In-clusters, which will grow wider and longer with increasing temperature, and finally cover the surface completely.

关键词: scanning tunnelling microscopy, surface structures, Ge, In

Abstract: Different In/Ge(001) nanostructures have been obtained by annealing the samples at 320℃ with different coverages of In. Annealing a sample with a critical coverage of 2.1 monolayer of In, different In/Ge(001) nanostructures can be obtained at different temperatures. It is found that thermal annealing treatments first make In atoms form elongated Ge{103}-faceted In-clusters, which will grow wider and longer with increasing temperature, and finally cover the surface completely.

Key words: scanning tunnelling microscopy, surface structures, Ge, In

中图分类号:  (Methods of micro- and nanofabrication and processing)

  • 81.16.-c
68.35.Ct (Interface structure and roughness) 68.37.Ef (Scanning tunneling microscopy (including chemistry induced with STM)) 81.07.-b (Nanoscale materials and structures: fabrication and characterization) 81.40.Ef (Cold working, work hardening; annealing, post-deformation annealing, quenching, tempering recovery, and crystallization)