[1] |
Wu S B, Gao J F, Wang W B and Zhang J Y 2016 IEEE Trans. Electron. Devices 63 3882
doi: 10.1109/TED.2016.2597244
|
[2] |
Hao Y, Yang L, Ma X H, Ma J G, Cao M Y, Pan C Y, Wang C and Zhang J C 2011 IEEE Electron Device Lett. 32 626
doi: 10.1109/LED.2011.2118736
|
[3] |
Yang L, Zhou X W, Ma X H, Lv L, Cao Y R, Zhang J C and Hao Y 2017 Chin. Phys. B 26 017304
doi: 10.1088/1674-1056/26/1/017304
|
[4] |
Mi M H, Ma X H, Yang L, Lu Yang, Hou B, Zhu J J, Zhang M, Zhang H S, Zhu Q, Yang L A and Hao Y 2017 IEEE Trans. Electron. Devices 64 4875
doi: 10.1109/TED.2017.2761766
|
[5] |
Palacios T, Chakraborty A, Rajan S, Poblenz C, Keller S, DenBaars S P, Speck J S and Mishra U K 2005 IEEE Electron Device Lett. 26 781
doi: 10.1109/LED.2005.857701
|
[6] |
Chu R M, Shen L, Fichtenbaum N, Brown D, Chen Z, Keller S, DenBaars S P and Mishra U K 2008 IEEE Electron Device Lett. 29 974
doi: 10.1109/LED.2008.2001639
|
[7] |
Yue Y Z, Hu Z Y, Guo J, Sensale-Rodriguez B, Li G W, Wang R H, Faria F, Fang T, Song B, Gao X, Guo S P, Kosel T, Snider G, Fay P, Jena D and Xing H L 2012 IEEE Electron Device Lett. 33 988
doi: 10.1109/LED.2012.2196751
|
[8] |
Shinohara K, Regan D C, Tang Y, Corrion A L, Brown D F, Wong J C, Robinson J F, Fung H H, Schmitz A, Oh T C, Kim S J, Chen P S, Nagele R G, Margomenos A D and Micovic M 2013 IEEE Trans. Electron. Devices 60 2982
doi: 10.1109/TED.2013.2268160
|
[9] |
Mi M H, Ma X H, Yang L, Lu Y, Hou B, Zhang M, Zhang H S, Wu S and Hao Y 2019 AIP Adv. 9 045212
doi: 10.1063/1.5090528
|
[10] |
Then H W, Chow L A, Dasgupta S, Gardner S, Radosavljevic M, Rao V R, Sung S H, Yang G and Chau R S 2015 Proceedings of Symposium on VLSI Technology, June 16-18, 2015, Kyoto, Japan, p. 202
|
[11] |
Mao W, Fan J S, Du M, Zhang J F, Zheng X F, Wang C, Ma X H, Zhang J C and Hao Y 2016 Chin. Phys. B 25 127305
doi: 10.1088/1674-1056/25/12/127305
|
[12] |
Ando Y, Okamoto Y, Miyamoto H, Nakayama T, Inoue T and Kuzuhara M 2003 IEEE Electron Device Lett. 24 289
doi: 10.1109/LED.2003.812532
|
[13] |
Wu Y F, Saxler A, Moore M, Smith R P, Sheppard S, Chavarkar P M, Wisleder T, Mishra U K and Parikh 2004 IEEE Electron Device Lett. 25 117
doi: 10.1109/LED.2003.822667
|
[14] |
Liu J, Zhou Y, Zhu J, Cai Y, Lau K M and Chen K J 2007 IEEE Trans. Electron. Devices 54 2
doi: 10.1109/TED.2006.887045
|
[15] |
Tsou C W, Kang H C, Lian Y W and Hsu S 2016 IEEE Trans. Electron. Devices 63 4218
doi: 10.1109/TED.2016.2605128
|
[16] |
Medjdoub F, Alomari M, Carlin J F, Gonschorek M, Feltin E, Py M A, Grandjean N and Kohn E 2008 IEEE Electron Device Lett. 29 422
doi: 10.1109/LED.2008.919377
|
[17] |
Crespo A, Bellot M M, Chabak K D, Gillespie J K, Jessen G H, Miller V, Trejo M, Via G D, Walker D E, Jr, Winningham B W, Smith H E, Cooper T A, Gao X and Guo S 2010 IEEE Electron Device Lett. 31 2
doi: 10.1109/LED.2009.2034875
|
[18] |
Chung J W, Saadat O I, Tirado J M, Gao X, Guo S P and Palacios T 2009 IEEE Electron Device Lett. 30 904
doi: 10.1109/LED.2009.2026718
|
[19] |
Lu Y, Ma X H, Yang L, Hou B, Mi M H, Zhang M, Zheng J X, Zhang H S and Hao Y 2018 IEEE Electron Device Lett. 39 811
doi: 10.1109/LED.2018.2828860
|
[20] |
Saunier P, Schuette M L, Chou T M, Tserng H Q, Ketterson A, Beam E, Pilla M and Gao X 2013 IEEE Trans. Electron. Devices 60 3099
doi: 10.1109/TED.2013.2277772
|
[21] |
Vetury R, Zhang N Q, Keller S and Mishra U K 2001 IEEE Trans. Electron. Devices 48 560
doi: 10.1109/16.906451
|