Low temperature photoluminescence study of GaAs defect states

doi:10.1088/1674-1056/ab5fb8

中国物理B ›› 2020, Vol. 29 ›› Issue (1): 10703-010703.doi: 10.1088/1674-1056/ab5fb8

• SPECIAL TOPIC—Recent advances in thermoelectric materials and devices • 上一篇下一篇

Low temperature photoluminescence study of GaAs defect states

Jia-Yao Huang(黄佳瑶), Lin Shang(尚林), Shu-Fang Ma(马淑芳), Bin Han(韩斌), Guo-Dong Wei(尉国栋), Qing-Ming Liu(刘青明), Xiao-Dong Hao(郝晓东), Heng-Sheng Shan(单恒升), Bing-She Xu(许并社)

1 Institute of Atomic and Molecular Science, Shaanxi University of Science and Technology, Xi'an 710021, China;
2 Key Laboratory of Interface Science and Engineering in Advanced Materials of Ministry of Education, Taiyuan University of Technology, Taiyuan 030024, China

收稿日期:2019-08-26 修回日期:2019-11-17 出版日期:2020-01-05 发布日期:2020-01-05
通讯作者: Shu-Fang Ma, Bing-She Xu E-mail:xubs@tyut.edu.cn;mashufang@sust.edu.cn
基金资助:
Project supported by the National Natural Science Foundation of China (Grant No. 21972103), the National Key Research and Development Program of China (Grant No. 2016YFB040183), and Research and Development Program of Shanxi Province, China (Grant No. 201703D111026).

Low temperature photoluminescence study of GaAs defect states

Jia-Yao Huang(黄佳瑶)¹, Lin Shang(尚林)¹, Shu-Fang Ma(马淑芳)¹, Bin Han(韩斌)¹, Guo-Dong Wei(尉国栋)¹, Qing-Ming Liu(刘青明)¹, Xiao-Dong Hao(郝晓东)¹, Heng-Sheng Shan(单恒升)¹, Bing-She Xu(许并社)^1,2

1 Institute of Atomic and Molecular Science, Shaanxi University of Science and Technology, Xi'an 710021, China;
2 Key Laboratory of Interface Science and Engineering in Advanced Materials of Ministry of Education, Taiyuan University of Technology, Taiyuan 030024, China

Received:2019-08-26 Revised:2019-11-17 Online:2020-01-05 Published:2020-01-05
Contact: Shu-Fang Ma, Bing-She Xu E-mail:xubs@tyut.edu.cn;mashufang@sust.edu.cn
Supported by:
Project supported by the National Natural Science Foundation of China (Grant No. 21972103), the National Key Research and Development Program of China (Grant No. 2016YFB040183), and Research and Development Program of Shanxi Province, China (Grant No. 201703D111026).

摘要/Abstract

摘要： Low temperature (77 K) photoluminescence measurements have been performed on different GaAs substrates to evaluate the GaAs crystal quality. Several defect-related luminescence peaks have been observed, including 1.452 eV, 1.476 eV, 1.326 eV peaks deriving from 78 meV Ga_As antisite defects, and 1.372 eV, 1.289 eV peaks resulting from As vacancy related defects. Changes in photoluminescence emission intensity and emission energy as a function of temperature and excitation power lead to the identification of the defect states. The luminescence mechanisms of the defect states were studied by photoluminescence spectroscopy and the growth quality of GaAs crystal was evaluated.

关键词: low temperature photoluminescence, Ga_{m As} antisite defects, luminescence mechanisms of defect states, GaAs crystal quality

Abstract: Low temperature (77 K) photoluminescence measurements have been performed on different GaAs substrates to evaluate the GaAs crystal quality. Several defect-related luminescence peaks have been observed, including 1.452 eV, 1.476 eV, 1.326 eV peaks deriving from 78 meV Ga_As antisite defects, and 1.372 eV, 1.289 eV peaks resulting from As vacancy related defects. Changes in photoluminescence emission intensity and emission energy as a function of temperature and excitation power lead to the identification of the defect states. The luminescence mechanisms of the defect states were studied by photoluminescence spectroscopy and the growth quality of GaAs crystal was evaluated.

Key words: low temperature photoluminescence, Ga_{m As} antisite defects, luminescence mechanisms of defect states, GaAs crystal quality

中图分类号: (Optical instruments and equipment)

07.60.-j

81.05.-t (Specific materials: fabrication, treatment, testing, and analysis) 81.05.Ea (III-V semiconductors)

黄佳瑶, 尚林, 马淑芳, 韩斌, 尉国栋, 刘青明, 郝晓东, 单恒升, 许并社. Low temperature photoluminescence study of GaAs defect states[J]. 中国物理B, 2020, 29(1): 10703-010703.

Jia-Yao Huang(黄佳瑶), Lin Shang(尚林), Shu-Fang Ma(马淑芳), Bin Han(韩斌), Guo-Dong Wei(尉国栋), Qing-Ming Liu(刘青明), Xiao-Dong Hao(郝晓东), Heng-Sheng Shan(单恒升), Bing-She Xu(许并社). Low temperature photoluminescence study of GaAs defect states[J]. Chin. Phys. B, 2020, 29(1): 10703-010703.

参考文献 36

[1]	Li M F, Ni H Q, Ding Y, David B, Liang K, Ana C M and Niu Z C 2014 Chin. Phys. B 23 027803 doi: 10.1088/1674-1056/23/2/027803
[2]	Xu J B, Zhang H Y, Fu X J, Guo T Y and Huang J 2010 Chin. Phys. B 19 037302 doi: 10.1088/1674-1056/19/3/037302
[3]	Ali Y P, Narsale A M and Arora B M 2006 Nucl. Instr. Meth. Phys. Res. B 247 238 doi: 10.1016/j.nimb.2006.01.067
[4]	Baeumler M, Börner F, Kretzer U, Scheffer-Czygan M, Bünger T and Wagner J 2008 J. Mater. Sci: Mater Electron. 19 165 doi: 10.1007/s10854-007-9532-x
[5]	Choi H Y, Cho M Y, Yim K G, Kim M S, Lee D Y, Kim J S, Kim G S and Leem J Y 2012 Microelectron. Eng. 89 6 doi: 10.1016/j.mee.2011.04.011
[6]	Lavrukhin D V, Yachmenev A E, Bugaev A S, Galiev G B, Klimov E A, Khabibullin R A, Ponomarev D S and Maltsev P P 2015 Semiconductors 49 911 doi: 10.1134/S1063782615070179
[7]	Galiev G B, Klimov E A, Klochkov A N, Pushkarev S S and Maltsev P P 2018 Semiconductors 52 376 doi: 10.1134/S1063782618030119
[8]	Ky N H and Reinhart F K 1998 J. Appl. Phys. 83 718 doi: 10.1063/1.366743
[9]	Xu H and Lindefelt U 1990 Phys. Rev. B 41 5979 doi: 10.1103/PhysRevB.41.5979
[10]	Wager J F 1991 J. Appl. Phys. 69 3022 doi: 10.1063/1.348589
[11]	Yu P W 1984 Phys. Rev. B 29 2283
[12]	Y P W and Reynolds D C 1982 J. Appl. Phys. 53 1263 doi: 10.1063/1.330584
[13]	Elliott K R 1983 Appl. Phys. Lett. 42 274 doi: 10.1063/1.93913
[14]	Chatterjee P K, Vaidyanathan K V, Durschlag M S and Streetman B G 1975 Solid State Commun. 17 1421 doi: 10.1016/0038-1098(75)90617-1
[15]	Hwang C J 1969 Phys. Rev. 180 827 doi: 10.1103/PhysRev.180.827
[16]	Birey H and Sites J 1980 J. Appl. Phys. 51 619 doi: 10.1063/1.327316
[17]	Bogardus E H and Bebb H B 1968 Phys. Rev. 176 993 doi: 10.1103/PhysRev.176.993
[18]	Williams E W 1968 Phys. Rev. 168 922 doi: 10.1103/PhysRev.168.922
[19]	Bugajski M, Ko K H, Lagowski J and Gatos H C 1989 J. Appl. Phys. 65 596 doi: 10.1063/1.343114
[20]	Hetzler S R, McGill T C and Hunter A T 1984 Appl. Phys. Lett. 44 793 doi: 10.1063/1.94888
[21]	Shanabrook B V, Moore W J and Bishop S G 1986 J. Appl. Phys. 59 2535 doi: 10.1063/1.337023
[22]	Suezawa M and Sumino K 1994 J. Appl. Phys. 76 932 doi: 10.1063/1.357771
[23]	Yu P W, Mitchel W C, Mier M G, Li S S and Wang W L 1982 Appl. Phys. Lett. 41 532 doi: 10.1063/1.93579
[24]	Piazza F, Pavest L, Henini M and Johnston D 1992 Semicond. Sci. Technol. 7 1504 doi: 10.1088/0268-1242/7/12/014
[25]	Moore W J, Hawkins R L and Shanabrook B V 1987 Physica B+C 146 65 doi: 10.1016/0378-4363(87)90051-9
[26]	Mihara M, Mannoh M, Shinozaki K, Naritsuka S and Ishii M 1986 Jpn. J. Appl. Phys. 25 L611
[27]	Kressel H, Dunse J U, Nelson H and Hawrylo F Z 1968 J. Appl. Phys. 39 2006 doi: 10.1063/1.1656480
[28]	Kulakovskii V D, Lach E and Forchel A 1989 Phys. Rev. B 40 8087 doi: 10.1103/PhysRevB.40.8087
[29]	Pavesi L, Henini M and Johnston D 1995 Appl. Phys. Lett. 66 2846 doi: 10.1063/1.113449
[30]	Borghs G, Bhattacharyya K, Deneffe K, Van Mieghem P and Mertens R 1989 J. Appl. Phys. 66 4381 doi: 10.1063/1.343958
[31]	Mokerov V G, Fedorov Yu V, Guk A V, Galiev G B, Strakhov V A and Yaremenko N G 1998 Semiconductors 32 950 doi: 10.1134/1.1187521
[32]	Seong H and Lewis L J 1995 Phys. Rev. B 52 5675
[33]	Islam A Z M T, Jung D W, Noh J P and Otsuka N 2009 J. Appl. Phys. 105 093507 doi: 10.1063/1.3122522
[34]	Hopfield J J 1959 J. Phys. Chem. Solids 10 110 doi: 10.1016/0022-3697(59)90064-2
[35]	Ha Y K, Lee C, Kim J E and Park H Y 2000 J. Korean Phys. Soc. 36 42
[36]	Thomas D G, Gershenzon M and Trumbore F A 1964 Phys. Rev. 133 A269

Low temperature photoluminescence study of GaAs defect states

Low temperature photoluminescence study of GaAs defect states

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