Improved thermal property of strained InGaAlAs/AlGaAs quantum wells for 808-nm vertical cavity surface emitting lasers

doi:10.1088/1674-1056/ac16d0

中国物理B ›› 2022, Vol. 31 ›› Issue (3): 34208-034208.doi: 10.1088/1674-1056/ac16d0

Improved thermal property of strained InGaAlAs/AlGaAs quantum wells for 808-nm vertical cavity surface emitting lasers

Zhuang-Zhuang Zhao(赵壮壮), Meng Xun(荀孟)^†, Guan-Zhong Pan(潘冠中), Yun Sun(孙昀), Jing-Tao Zhou(周静涛), and De-Xin Wu(吴德馨)

Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China

收稿日期:2021-05-30 修回日期:2021-07-04 接受日期:2021-07-22 出版日期:2022-02-22 发布日期:2022-03-01
通讯作者: Meng Xun E-mail:xunmeng@ime.ac.cn
基金资助:
Project supported by the National Natural Science Foundation of China (Grant No. 61804175), the Key Research Program of Frontier Sciences, Chinese Academy of Sciences (Grant No. ZDBS-LY-JSC031), and the China Postdoctoral Science Foundation (Grant No. BX20200358).

Improved thermal property of strained InGaAlAs/AlGaAs quantum wells for 808-nm vertical cavity surface emitting lasers

Zhuang-Zhuang Zhao(赵壮壮), Meng Xun(荀孟)^†, Guan-Zhong Pan(潘冠中), Yun Sun(孙昀), Jing-Tao Zhou(周静涛), and De-Xin Wu(吴德馨)

Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China

Received:2021-05-30 Revised:2021-07-04 Accepted:2021-07-22 Online:2022-02-22 Published:2022-03-01
Contact: Meng Xun E-mail:xunmeng@ime.ac.cn
Supported by:
Project supported by the National Natural Science Foundation of China (Grant No. 61804175), the Key Research Program of Frontier Sciences, Chinese Academy of Sciences (Grant No. ZDBS-LY-JSC031), and the China Postdoctoral Science Foundation (Grant No. BX20200358).

摘要/Abstract

摘要： The 808-nm vertical cavity surface emitting laser (VCSEL) with strained In_0.13Ga_0.75Al_0.12As/Al_0.3Ga_0.7As quantum wells is designed and fabricated. Compared with the VCSELs with Al_0.05Ga_0.95As/Al_0.3Ga_0.7As quantum wells, the VCSEL with strained In_0.13Ga_0.75Al_0.12As/Al_0.3Ga_0.7As quantum wells is demonstrated to possess higher power conversion efficiency (PCE) and better temperature stability. The maximum PCE of 43.8% for 10-μm VCSEL is achieved at an ambient temperature of 30 ℃. The size-dependent thermal characteristics are also analyzed by characterizing the spectral power and output power. It demonstrates that small oxide-aperture VCSELs are advantageous for temperature-stable performance.

关键词: 808-nm VCSEL, InGaAlAs/AlGaAs quantum wells, thermal property

Abstract: The 808-nm vertical cavity surface emitting laser (VCSEL) with strained In_0.13Ga_0.75Al_0.12As/Al_0.3Ga_0.7As quantum wells is designed and fabricated. Compared with the VCSELs with Al_0.05Ga_0.95As/Al_0.3Ga_0.7As quantum wells, the VCSEL with strained In_0.13Ga_0.75Al_0.12As/Al_0.3Ga_0.7As quantum wells is demonstrated to possess higher power conversion efficiency (PCE) and better temperature stability. The maximum PCE of 43.8% for 10-μm VCSEL is achieved at an ambient temperature of 30 ℃. The size-dependent thermal characteristics are also analyzed by characterizing the spectral power and output power. It demonstrates that small oxide-aperture VCSELs are advantageous for temperature-stable performance.

Key words: 808-nm VCSEL, InGaAlAs/AlGaAs quantum wells, thermal property

中图分类号: (Semiconductor lasers; laser diodes)

42.55.Px

42.55.Sa (Microcavity and microdisk lasers) 73.21.Fg (Quantum wells)

Zhuang-Zhuang Zhao(赵壮壮), Meng Xun(荀孟), Guan-Zhong Pan(潘冠中), Yun Sun(孙昀), Jing-Tao Zhou(周静涛), and De-Xin Wu(吴德馨). Improved thermal property of strained InGaAlAs/AlGaAs quantum wells for 808-nm vertical cavity surface emitting lasers[J]. 中国物理B, 2022, 31(3): 34208-034208.

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Improved thermal property of strained InGaAlAs/AlGaAs quantum wells for 808-nm vertical cavity surface emitting lasers

Improved thermal property of strained InGaAlAs/AlGaAs quantum wells for 808-nm vertical cavity surface emitting lasers

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