中国物理B ›› 2022, Vol. 31 ›› Issue (2): 28701-028701.doi: 10.1088/1674-1056/ac0cd5

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Terahertz generation and detection of LT-GaAs thin film photoconductive antennas excited by lasers of different wavelengths

Xin Liu(刘欣), Qing-Hao Meng(孟庆昊), Jing Ding(丁晶), Zhi-Chen Bai(白志晨), Jia-Hui Wang(王佳慧), Cong Zhang(张聪), Bo Su(苏波), and Cun-Lin Zhang(张存林)   

  1. Beijing Advanced Innovation Center for Imaging Theory and Technology, Beijing Key Laboratory for Terahertz Spectroscopy and Imaging;Key Laboratory of Terahertz Optoelectronics, Ministry of Education, Department of Physics, Capital Normal University, Beijing 100048, China
  • 收稿日期:2021-04-29 修回日期:2021-06-11 接受日期:2021-06-21 出版日期:2022-01-13 发布日期:2022-01-26
  • 通讯作者: Bo Su E-mail:subo75@cnu.edu.cn
  • 基金资助:
    Project supported by the National Natural Science Foundation of China (Grant No. 61575131). The authors would like to thank Editage (www.editage.com) for English language editing.

Terahertz generation and detection of LT-GaAs thin film photoconductive antennas excited by lasers of different wavelengths

Xin Liu(刘欣), Qing-Hao Meng(孟庆昊), Jing Ding(丁晶), Zhi-Chen Bai(白志晨), Jia-Hui Wang(王佳慧), Cong Zhang(张聪), Bo Su(苏波), and Cun-Lin Zhang(张存林)   

  1. Beijing Advanced Innovation Center for Imaging Theory and Technology, Beijing Key Laboratory for Terahertz Spectroscopy and Imaging;Key Laboratory of Terahertz Optoelectronics, Ministry of Education, Department of Physics, Capital Normal University, Beijing 100048, China
  • Received:2021-04-29 Revised:2021-06-11 Accepted:2021-06-21 Online:2022-01-13 Published:2022-01-26
  • Contact: Bo Su E-mail:subo75@cnu.edu.cn
  • Supported by:
    Project supported by the National Natural Science Foundation of China (Grant No. 61575131). The authors would like to thank Editage (www.editage.com) for English language editing.

摘要: A new method of generating and detecting terahertz waves is proposed. Low-temperature-grown gallium arsenide (LT-GaAs) thin films are prepared by etching a sacrificial layer (AlAs) in a four-layer epitaxial structure constituted with LT-GaAs, AlAs, GaAs, and semi-insulating gallium arsenide (SI-GaAs). The thin films are then transferred to clean silicon for fabricating the LT-GaAs thin film antennas. The quality and transmission characteristics of the films are analyzed by an 800-nm asynchronous ultrafast time domain spectroscopy system, and the degree of bonding between the film and silicon wafer is determined. Two LT-GaAs thin film antennas for generating and detecting the terahertz waves are tested with a 1550-nm femtosecond laser. The terahertz signal is successfully detected, proving the feasibility of this home-made LT-GaAs photoconductive antennas. This work lays a foundation for studying the mechanism of terahertz wave generation in GaAs photoconductive antennas below the semiconductor band gap.

关键词: terahertz, low-temperature-grown GaAs, photoconductive antenna, 1550-nm laser

Abstract: A new method of generating and detecting terahertz waves is proposed. Low-temperature-grown gallium arsenide (LT-GaAs) thin films are prepared by etching a sacrificial layer (AlAs) in a four-layer epitaxial structure constituted with LT-GaAs, AlAs, GaAs, and semi-insulating gallium arsenide (SI-GaAs). The thin films are then transferred to clean silicon for fabricating the LT-GaAs thin film antennas. The quality and transmission characteristics of the films are analyzed by an 800-nm asynchronous ultrafast time domain spectroscopy system, and the degree of bonding between the film and silicon wafer is determined. Two LT-GaAs thin film antennas for generating and detecting the terahertz waves are tested with a 1550-nm femtosecond laser. The terahertz signal is successfully detected, proving the feasibility of this home-made LT-GaAs photoconductive antennas. This work lays a foundation for studying the mechanism of terahertz wave generation in GaAs photoconductive antennas below the semiconductor band gap.

Key words: terahertz, low-temperature-grown GaAs, photoconductive antenna, 1550-nm laser

中图分类号:  (Millimeter/terahertz fields effects)

  • 87.50.U
73.21.Cd (Superlattices)