中国物理B ›› 2022, Vol. 31 ›› Issue (8): 88502-088502.doi: 10.1088/1674-1056/ac5977

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Wake-up effect in Hf0.4Zr0.6O2 ferroelectric thin-film capacitors under a cycling electric field

Yilin Li(李屹林)1, Hui Zhu(朱慧)1,†, Rui Li(李锐)1, Jie Liu(柳杰)1, Jinjuan Xiang(项金娟)2, Na Xie(解娜)1, Zeng Huang(黄增)1, Zhixuan Fang(方志轩)1, Xing Liu(刘行)1, and Lixing Zhou(周丽星)1   

  1. 1 Faculty of Information Technology, Beijing University of Technology, Beijing 100023, China;
    2 Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China
  • 收稿日期:2021-11-25 修回日期:2022-02-09 接受日期:2022-03-02 出版日期:2022-07-18 发布日期:2022-07-23
  • 通讯作者: Hui Zhu E-mail:zhuhui@bjut.edu.cn
  • 基金资助:
    Project supported by the National Natural Science Foundation of China (Grant No. 61201046) and the Natural Science Foundation of Beijing, China (Grant Nos. 4202009 and 4162013).

Wake-up effect in Hf0.4Zr0.6O2 ferroelectric thin-film capacitors under a cycling electric field

Yilin Li(李屹林)1, Hui Zhu(朱慧)1,†, Rui Li(李锐)1, Jie Liu(柳杰)1, Jinjuan Xiang(项金娟)2, Na Xie(解娜)1, Zeng Huang(黄增)1, Zhixuan Fang(方志轩)1, Xing Liu(刘行)1, and Lixing Zhou(周丽星)1   

  1. 1 Faculty of Information Technology, Beijing University of Technology, Beijing 100023, China;
    2 Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China
  • Received:2021-11-25 Revised:2022-02-09 Accepted:2022-03-02 Online:2022-07-18 Published:2022-07-23
  • Contact: Hui Zhu E-mail:zhuhui@bjut.edu.cn
  • Supported by:
    Project supported by the National Natural Science Foundation of China (Grant No. 61201046) and the Natural Science Foundation of Beijing, China (Grant Nos. 4202009 and 4162013).

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摘要： We examined the wake-up effect in a TiN/Hf0.4Zr0.6O2/TiN structure. The increased polarization was affected by the cumulative duration of a switched electric field and the single application time of the field during each switching cycle. The space-charge-limited current was stable, indicating that the trap density did not change during the wake-up. The effective charge density in the space-charge region was extracted from capacitance-voltage curves, which demonstrated an increase in free charges at the interface. Based on changing characteristics in these properties, the wake-up effect can be attributed to the redistribution of oxygen vacancies under the electric field.

关键词: wake up, HZO ferroelectric thin-film, cycling electric field, oxygen vacancy

Abstract: We examined the wake-up effect in a TiN/Hf0.4Zr0.6O2/TiN structure. The increased polarization was affected by the cumulative duration of a switched electric field and the single application time of the field during each switching cycle. The space-charge-limited current was stable, indicating that the trap density did not change during the wake-up. The effective charge density in the space-charge region was extracted from capacitance-voltage curves, which demonstrated an increase in free charges at the interface. Based on changing characteristics in these properties, the wake-up effect can be attributed to the redistribution of oxygen vacancies under the electric field.

Key words: wake up, HZO ferroelectric thin-film, cycling electric field, oxygen vacancy

中图分类号:  (Non-volatile ferroelectric memories)

  • 85.50.Gk
77.55.D (High-permittivity gate dielectric films) 77.55.fp (Other ferroelectric films) 72.10.-d (Theory of electronic transport; scattering mechanisms)