Mechanism of improving forward and reverse blocking voltages in AlGaN/GaN HEMTs by using Schottky drain

doi:10.1088/1674-1056/23/10/107303

›› 2014, Vol. 23 ›› Issue (10): 107303-107303.doi: 10.1088/1674-1056/23/10/107303

• CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES • 上一篇下一篇

Mechanism of improving forward and reverse blocking voltages in AlGaN/GaN HEMTs by using Schottky drain

赵胜雷^a, 宓珉瀚^a, 侯斌^b, 罗俊^a, 王毅^a, 戴杨^a, 张进成^a, 马晓华^{a b}, 郝跃^a

a Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi'an 710071, China;
b School of Advanced Materials and Nanotechnology, Xidian University, Xi'an 710071, China

收稿日期:2014-01-03 修回日期:2013-04-17 出版日期:2014-10-15 发布日期:2014-10-15
基金资助:
Project supported by the National Natural Science Foundation of China (Grant Nos. 61334002 and 61106106) and the Opening Project of Science and Technology on Reliability Physics and Application Technology of Electronic Component Laboratory, China (Grant No. ZHD201206).

Mechanism of improving forward and reverse blocking voltages in AlGaN/GaN HEMTs by using Schottky drain

Zhao Sheng-Lei (赵胜雷)^a, Mi Min-Han (宓珉瀚)^a, Hou Bin (侯斌)^b, Luo Jun (罗俊)^a, Wang Yi (王毅)^a, Dai Yang (戴杨)^a, Zhang Jin-Cheng (张进成)^a, Ma Xiao-Hua (马晓华)^{a b}, Hao Yue (郝跃)^a

a Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi'an 710071, China;
b School of Advanced Materials and Nanotechnology, Xidian University, Xi'an 710071, China

Received:2014-01-03 Revised:2013-04-17 Online:2014-10-15 Published:2014-10-15
Contact: Hao Yue E-mail:yhao@xidian.edu.cn
About author:73.40.Kp; 73.61.Ey; 78.30.Fs
Supported by:
Project supported by the National Natural Science Foundation of China (Grant Nos. 61334002 and 61106106) and the Opening Project of Science and Technology on Reliability Physics and Application Technology of Electronic Component Laboratory, China (Grant No. ZHD201206).

摘要/Abstract

摘要： In this paper, we demonstrate that a Schottky drain can improve the forward and reverse blocking voltages (BVs) simultaneously in AlGaN/GaN high-electron mobility transistors (HEMTs). The mechanism of improving the two BVs is investigated by analysing the leakage current components and by software simulation. The forward BV increases from 72 V to 149 V due to the good Schottky contact morphology. During the reverse bias, the buffer leakage in the Ohmic-drain HEMT increases significantly with the increase of the negative drain bias. For the Schottky-drain HEMT, the buffer leakage is suppressed effectively by the formation of the depletion region at the drain terminal. As a result, the reverse BV is enhanced from -5 V to -49 V by using a Schottky drain. Experiments and the simulation indicate that a Schottky drain is desirable for power electronic applications.

关键词: AlGaN/GaN high-electron mobility transistors (HEMTs), forward blocking voltage, reverse blocking voltage, Schottky drain

Abstract: In this paper, we demonstrate that a Schottky drain can improve the forward and reverse blocking voltages (BVs) simultaneously in AlGaN/GaN high-electron mobility transistors (HEMTs). The mechanism of improving the two BVs is investigated by analysing the leakage current components and by software simulation. The forward BV increases from 72 V to 149 V due to the good Schottky contact morphology. During the reverse bias, the buffer leakage in the Ohmic-drain HEMT increases significantly with the increase of the negative drain bias. For the Schottky-drain HEMT, the buffer leakage is suppressed effectively by the formation of the depletion region at the drain terminal. As a result, the reverse BV is enhanced from -5 V to -49 V by using a Schottky drain. Experiments and the simulation indicate that a Schottky drain is desirable for power electronic applications.

Key words: AlGaN/GaN high-electron mobility transistors (HEMTs), forward blocking voltage, reverse blocking voltage, Schottky drain

中图分类号: (III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions)

73.40.Kp

73.61.Ey (III-V semiconductors) 78.30.Fs (III-V and II-VI semiconductors)

赵胜雷, 宓珉瀚, 侯斌, 罗俊, 王毅, 戴杨, 张进成, 马晓华, 郝跃. Mechanism of improving forward and reverse blocking voltages in AlGaN/GaN HEMTs by using Schottky drain[J]. , 2014, 23(10): 107303-107303.

Zhao Sheng-Lei (赵胜雷), Mi Min-Han (宓珉瀚), Hou Bin (侯斌), Luo Jun (罗俊), Wang Yi (王毅), Dai Yang (戴杨), Zhang Jin-Cheng (张进成), Ma Xiao-Hua (马晓华), Hao Yue (郝跃). Mechanism of improving forward and reverse blocking voltages in AlGaN/GaN HEMTs by using Schottky drain[J]. Chin. Phys. B, 2014, 23(10): 107303-107303.

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Mechanism of improving forward and reverse blocking voltages in AlGaN/GaN HEMTs by using Schottky drain

Mechanism of improving forward and reverse blocking voltages in AlGaN/GaN HEMTs by using Schottky drain

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