Electronic transport properties of silicon junctionless nanowire transistors fabricated by femtosecond laser direct writing

doi:10.1088/1674-1056/25/6/068103

中国物理B ›› 2016, Vol. 25 ›› Issue (6): 68103-068103.doi: 10.1088/1674-1056/25/6/068103

• INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY • 上一篇下一篇

Electronic transport properties of silicon junctionless nanowire transistors fabricated by femtosecond laser direct writing

Liu-Hong Ma(马刘红), Wei-Hua Han(韩伟华), Hao Wang(王昊), Qi-feng Lyu(吕奇峰), Wang Zhang(张望), Xiang Yang(杨香), Fu-Hua Yang(杨富华)

Engineering Research Center for Semiconductor Integration Technology, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China

收稿日期:2016-01-21 修回日期:2016-03-08 出版日期:2016-06-05 发布日期:2016-06-05
通讯作者: Wei-Hua Han, Fu-Hua Yang E-mail:weihua@semi.ac.cn;fhyang@semi.ac.cn
基金资助:
Project supported by the National Natural Science Foundation of China (Grant Nos. 61376096, 61327813, and 61404126) and the National Basic Research Program of China (Grant No. 2010CB934104).

Electronic transport properties of silicon junctionless nanowire transistors fabricated by femtosecond laser direct writing

Liu-Hong Ma(马刘红), Wei-Hua Han(韩伟华), Hao Wang(王昊), Qi-feng Lyu(吕奇峰), Wang Zhang(张望), Xiang Yang(杨香), Fu-Hua Yang(杨富华)

Engineering Research Center for Semiconductor Integration Technology, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China

Received:2016-01-21 Revised:2016-03-08 Online:2016-06-05 Published:2016-06-05
Contact: Wei-Hua Han, Fu-Hua Yang E-mail:weihua@semi.ac.cn;fhyang@semi.ac.cn
Supported by:
Project supported by the National Natural Science Foundation of China (Grant Nos. 61376096, 61327813, and 61404126) and the National Basic Research Program of China (Grant No. 2010CB934104).

摘要/Abstract

摘要：

Silicon junctionless nanowire transistor (JNT) is fabricated by femtosecond laser direct writing on a heavily n-doped SOI substrate. The performances of the transistor, i.e., current drive, threshold voltage, subthreshold swing (SS), and electron mobility are evaluated. The device shows good gate control ability and low-temperature instability in a temperature range from 10 K to 300 K. The drain currents increasing by steps with the gate voltage are clearly observed from 10 K to 50 K, which is attributed to the electron transport through one-dimensional (1D) subbands formed in the nanowire. Besides, the device exhibits a better low-field electron mobility of 290 cm²·V^-1·s^-1, implying that the silicon nanowires fabricated by femtosecond laser have good electrical properties. This approach provides a potential application for nanoscale device patterning.

关键词: junctionless nanowire transistor, femtosecond laser lithography, electron mobility, quantum transport

Abstract:

Key words: junctionless nanowire transistor, femtosecond laser lithography, electron mobility, quantum transport

中图分类号: (Nanowires)

81.07.Gf

73.63.-b (Electronic transport in nanoscale materials and structures) 73.40.-c (Electronic transport in interface structures) 85.30.Tv (Field effect devices)

马刘红, 韩伟华, 王昊, 吕奇峰, 张望, 杨香, 杨富华. Electronic transport properties of silicon junctionless nanowire transistors fabricated by femtosecond laser direct writing[J]. 中国物理B, 2016, 25(6): 68103-068103.

Liu-Hong Ma(马刘红), Wei-Hua Han(韩伟华), Hao Wang(王昊), Qi-feng Lyu(吕奇峰), Wang Zhang(张望), Xiang Yang(杨香), Fu-Hua Yang(杨富华). Electronic transport properties of silicon junctionless nanowire transistors fabricated by femtosecond laser direct writing[J]. Chin. Phys. B, 2016, 25(6): 68103-068103.

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Electronic transport properties of silicon junctionless nanowire transistors fabricated by femtosecond laser direct writing

Electronic transport properties of silicon junctionless nanowire transistors fabricated by femtosecond laser direct writing

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