Coulomb blockade and hopping transport behaviors of donor-induced quantum dots in junctionless transistors

doi:10.1088/1674-1056/ab74ce

中国物理B ›› 2020, Vol. 29 ›› Issue (3): 38104-038104.doi: 10.1088/1674-1056/ab74ce

• INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY • 上一篇下一篇

Coulomb blockade and hopping transport behaviors of donor-induced quantum dots in junctionless transistors

Liu-Hong Ma(马刘红), Wei-Hua Han(韩伟华), Fu-Hua Yang(杨富华)

1 School of Physics and Microelectronics, Zhengzhou University, Zhengzhou 450001, China;
2 Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China;
3 Engineering Research Center for Semiconductor Integrated Technology, Beijing Engineering Center of Semiconductor Micro-Nano Integrated Technology, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;
4 State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China

收稿日期:2019-11-06 修回日期:2020-01-19 出版日期:2020-03-05 发布日期:2020-03-05
通讯作者: Wei-Hua Han, Fu-Hua Yang E-mail:weihua@semi.ac.cn;fhyang@semi.ac.cn
基金资助:
Project supported by the National Key R&D Program of China (Grant No. 2016YFA0200503) and the National Natural Science Foundation of China (Grant Nos. 11947115, 61376096, 61327813, and 61404126).

Coulomb blockade and hopping transport behaviors of donor-induced quantum dots in junctionless transistors

Liu-Hong Ma(马刘红)^1,3, Wei-Hua Han(韩伟华)^2,3, Fu-Hua Yang(杨富华)^3,4

1 School of Physics and Microelectronics, Zhengzhou University, Zhengzhou 450001, China;
2 Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China;
3 Engineering Research Center for Semiconductor Integrated Technology, Beijing Engineering Center of Semiconductor Micro-Nano Integrated Technology, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;
4 State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China

Received:2019-11-06 Revised:2020-01-19 Online:2020-03-05 Published:2020-03-05
Contact: Wei-Hua Han, Fu-Hua Yang E-mail:weihua@semi.ac.cn;fhyang@semi.ac.cn
Supported by:
Project supported by the National Key R&D Program of China (Grant No. 2016YFA0200503) and the National Natural Science Foundation of China (Grant Nos. 11947115, 61376096, 61327813, and 61404126).

摘要/Abstract

摘要： The ionized dopants, working as quantum dots in silicon nanowires, exhibit potential advantages for the development of atomic-scale transistors. We investigate single electron tunneling through a phosphorus dopant induced quantum dots array in heavily n-doped junctionless nanowire transistors. Several subpeaks splittings in current oscillations are clearly observed due to the coupling of the quantum dots at the temperature of 6 K. The transport behaviors change from resonance tunneling to hoping conduction with increased temperature. The charging energy of the phosphorus donors is approximately 12.8 meV. This work helps clear the basic mechanism of electron transport through donor-induced quantum dots and electron transport properties in the heavily doped nanowire through dopant engineering.

关键词: junctionless nanowire transistor, quantum transport, hopping transport, quantum dot

Abstract: The ionized dopants, working as quantum dots in silicon nanowires, exhibit potential advantages for the development of atomic-scale transistors. We investigate single electron tunneling through a phosphorus dopant induced quantum dots array in heavily n-doped junctionless nanowire transistors. Several subpeaks splittings in current oscillations are clearly observed due to the coupling of the quantum dots at the temperature of 6 K. The transport behaviors change from resonance tunneling to hoping conduction with increased temperature. The charging energy of the phosphorus donors is approximately 12.8 meV. This work helps clear the basic mechanism of electron transport through donor-induced quantum dots and electron transport properties in the heavily doped nanowire through dopant engineering.

Key words: junctionless nanowire transistor, quantum transport, hopping transport, quantum dot

中图分类号: (Nanowires)

81.07.Gf

73.63.-b (Electronic transport in nanoscale materials and structures) 73.40.-c (Electronic transport in interface structures) 85.30.Tv (Field effect devices)

马刘红, 韩伟华, 杨富华. Coulomb blockade and hopping transport behaviors of donor-induced quantum dots in junctionless transistors[J]. 中国物理B, 2020, 29(3): 38104-038104.

Liu-Hong Ma(马刘红), Wei-Hua Han(韩伟华), Fu-Hua Yang(杨富华). Coulomb blockade and hopping transport behaviors of donor-induced quantum dots in junctionless transistors[J]. Chin. Phys. B, 2020, 29(3): 38104-038104.

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Coulomb blockade and hopping transport behaviors of donor-induced quantum dots in junctionless transistors

Coulomb blockade and hopping transport behaviors of donor-induced quantum dots in junctionless transistors

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