A polaron theory of quantum thermal transistor in nonequilibrium three-level systems

doi:10.1088/1674-1056/ab973b

中国物理B ›› 2020, Vol. 29 ›› Issue (8): 80504-080504.doi: 10.1088/1674-1056/ab973b

所属专题： SPECIAL TOPIC — Phononics and phonon engineering

A polaron theory of quantum thermal transistor in nonequilibrium three-level systems

Chen Wang(王晨), Da-Zhi Xu(徐大智)

1 Department of Physics, Zhejiang Normal University, Jinhua 321004, China;
2 School of Physics and Center for Quantum Technology Research, Beijing Institute of Technology, Beijing 100081, China

收稿日期:2020-03-26 修回日期:2020-05-26 出版日期:2020-08-05 发布日期:2020-08-05
通讯作者: Chen Wang, Da-Zhi Xu E-mail:wangchenyifang@gmail.com;dzxu@bit.edu.cn
基金资助:
Project supported by the National Natural Science Foundation of China (Grant Nos. 11704093 and 11705008) and Beijing Institute of Technology Research Fund Program for Young Scholars, China.

A polaron theory of quantum thermal transistor in nonequilibrium three-level systems

Chen Wang(王晨)¹, Da-Zhi Xu(徐大智)²

1 Department of Physics, Zhejiang Normal University, Jinhua 321004, China;
2 School of Physics and Center for Quantum Technology Research, Beijing Institute of Technology, Beijing 100081, China

Received:2020-03-26 Revised:2020-05-26 Online:2020-08-05 Published:2020-08-05
Contact: Chen Wang, Da-Zhi Xu E-mail:wangchenyifang@gmail.com;dzxu@bit.edu.cn
Supported by:
Project supported by the National Natural Science Foundation of China (Grant Nos. 11704093 and 11705008) and Beijing Institute of Technology Research Fund Program for Young Scholars, China.

摘要/Abstract

摘要：

We investigate the quantum thermal transistor effect in nonequilibrium three-level systems by applying the polaron-transformed Redfield equation combined with full counting statistics. The steady state heat currents are obtained via this unified approach over a wide region of system-bath coupling, and can be analytically reduced to the Redfield and nonequilibrium noninteracting blip approximation results in the weak and strong coupling limits, respectively. A giant heat amplification phenomenon emerges in the strong system-bath coupling limit, where transitions mediated by the middle thermal bath are found to be crucial to unravel the underlying mechanism. Moreover, the heat amplification is also exhibited with moderate coupling strength, which can be properly explained within the polaron framework.

关键词: quantum transport, open systems, nonequilibrium and irreversible thermodynamics, phonons or vibrational states in low-dimensional structures and nanoscale materials

Abstract:

Key words: quantum transport, open systems, nonequilibrium and irreversible thermodynamics, phonons or vibrational states in low-dimensional structures and nanoscale materials

中图分类号: (Quantum transport)

05.60.Gg

03.65.Yz (Decoherence; open systems; quantum statistical methods) 05.70.Ln (Nonequilibrium and irreversible thermodynamics) 63.22.-m (Phonons or vibrational states in low-dimensional structures and nanoscale materials)

王晨, 徐大智. A polaron theory of quantum thermal transistor in nonequilibrium three-level systems[J]. 中国物理B, 2020, 29(8): 80504-080504.

Chen Wang(王晨), Da-Zhi Xu(徐大智). A polaron theory of quantum thermal transistor in nonequilibrium three-level systems[J]. Chin. Phys. B, 2020, 29(8): 80504-080504.

参考文献 49

[1]	Clausius R 1879 The Mechanical Theory of Heat (London:MacMillan)
[2]	Esposito M, Ochoa M A and Galperin M 2015 Phys. Rev. Lett. 114 080602 doi: 10.1103/PhysRevLett.114.080602
[3]	Katz G and Kosloff R 2016 Entropy 18 186 doi: 10.3390/e18050186
[4]	Chen X B and Duan W H 2015 Acta Phys. Sin. 64 186302(in Chinese)
[5]	Benenti G, Casati G, Saito K and Whitney R S 2017 Phys. Rep. 694 1 doi: 10.1016/j.physrep.2017.05.008
[6]	Segal D 2008 Phys. Rev. Lett. 101 260601 doi: 10.1103/PhysRevLett.101.260601
[7]	Ren J, Hanggi P and Li B 2010 Phys. Rev. Lett. 104 170601 doi: 10.1103/PhysRevLett.104.170601
[8]	Micadei K, Peterson J P S, Souza A M, Sarthour R S, Oliveira I S, Landi G T, Batalhao T B, Serra R M and Lutz E 2019 Nat. Comm. 10 2456 doi: 10.1038/s41467-019-10333-7
[9]	Wang L and Li B 2007 Phys. Rev. Lett. 99 177208 doi: 10.1103/PhysRevLett.99.177208
[10]	Cui L, Jeong W H, Hur S H, Matt M, Klockner J C, Pauly F, Nielaba P, Cuevas J C, Meyhofer E and Reddy P 2017 Science 355 1192 doi: 10.1126/science.aam6622
[11]	Segal D 2017 Science 355 1125 doi: 10.1126/science.aam9362
[12]	Li B 2006 Appl. Phys. Lett. 88 143501 doi: 10.1063/1.2191730
[13]	Li N B, Ren J, Wang L, Zhang G, Hanggi P and Li B 2012 Rev. Mod. Phys. 84 1045 doi: 10.1103/RevModPhys.84.1045
[14]	He D H, Buyukdagli S and Hu B 2009 Phys. Rev. B 80 104302 doi: 10.1103/PhysRevB.80.104302
[15]	He D H, Ai B Q, Chan H K and Hu B 2010 Phys. Rev. E 81 041131 doi: 10.1103/PhysRevE.81.041131
[16]	Chan H K, He D H and Hu B 2014 Phys. Rev. E 89 052126
[17]	Joulain K, Drevillon K, Ezzahri Y and Ordonez-Miranda J 2016 Phys. Rev. Lett. 116 200601 doi: 10.1103/PhysRevLett.116.200601
[18]	Guo B Q, Liu T and Yu C S 2018 Phys. Rev. E 98 022118
[19]	Guo B Q, Liu T and Yu C S 2019 Phys. Rev. E 99 032112
[20]	Du J Y, Sheng W, Su S H and Chen J C 2019 Phys. Rev. E 99 062123 doi: 10.1103/PhysRevE.99.062123
[21]	Wang C, Chen X M, Sun K W and Ren J 2018 Phys. Rev. A 97 052112 doi: 10.1103/PhysRevA.97.052112
[22]	Liu H, Wang C, Wang L Q and Ren J 2019 Phys. Rev. E 99 032114
[23]	Jiang J H, Kulkarni M, Segal D and Imary Y 2015 Phys. Rev. B 92 045309 doi: 10.1103/PhysRevB.92.045309
[24]	Su S H, Zhang Y C, Andresen B and Chen J C arXiv:1811.02400
[25]	Scovil H E D and Schulz-DuBois E O 1959 Phys. Rev. Lett. 2 262 doi: 10.1103/PhysRevLett.2.262
[26]	Quan H T, Liu Y X, Sun C P and Nori F 2007 Phys. Rev. E 76 031105 doi: 10.1103/PhysRevE.76.031105
[27]	Boukobza E and Tannor D J 2007 Phys. Rev. Lett. 98 240601 doi: 10.1103/PhysRevLett.98.240601
[28]	Krause T, Brandes T, Esposito M and Shaller G 2015 J. Chem. Phys. 142 134106 doi: 10.1063/1.4916359
[29]	Xu D Z, Wang C, Zhao Y and Cao J 2016 New J. Phys. 18 023003 doi: 10.1088/1367-2630/18/2/023003
[30]	Li S W, Kim M B, Agarwal G S and Scully M O 2017 Phys. Rev. A 96 063806 doi: 10.1103/PhysRevA.96.063806
[31]	Segal D 2018 Phys. Rev. E 97 052145 doi: 10.1103/PhysRevE.97.052145
[32]	Kilgour M and Segal D 2018 Phys. Rev. E 98 012117
[33]	Friedman H M and Segal D 2019 Phys. Rev. E 100 062112
[34]	Wang C, Ren J and Cao J 2015 Sci. Rep. 5 11787 doi: 10.1038/srep11787
[35]	Wang C, Ren J and Cao J 2017 Phys. Rev. A 95 023610 doi: 10.1103/PhysRevA.95.023610
[36]	Segal D and Nitzan A 2005 Phys. Rev. Lett. 94 034301 doi: 10.1103/PhysRevLett.94.034301
[37]	Segal D 2006 Phys. Rev. B 73 205415 doi: 10.1103/PhysRevB.73.205415
[38]	Nicolin L and Segal D 2011 J. Chem. Phys. 135 164106 doi: 10.1063/1.3655674
[39]	Nicolin L and Segal D 2011 Phys. Rev. B 84 161414 doi: 10.1103/PhysRevB.84.161414
[40]	Scully M O and Zubairy M S 1997 Quantum Optics (Cambridge:Cambridge University Press)
[41]	Tscherbul T V and Brumer P 2014 Phys. Rev. Lett. 113 113601 doi: 10.1103/PhysRevLett.113.113601
[42]	Leggett A J, Chakravarty S, Dorsey A T, Fisher M P A, Garg A and Zwerger W 1987 Rev. Mod. Phys. 59 1 doi: 10.1103/RevModPhys.59.1
[43]	Jang Seogjoo, Berkelbach T C and Reichman D 2013 New J. Phys. 15 105020 doi: 10.1088/1367-2630/15/10/105020
[44]	Nazir A 2009 Phys. Rev. Lett. 103 146404 doi: 10.1103/PhysRevLett.103.146404
[45]	Xu D Z and Cao J 2016 Frontiers of Physics 11 110308 doi: 10.1007/s11467-016-0540-2
[46]	Qin M, Wang C Y, Cui H T and Yi X X 2019 Phys. Rev. A 99 032111 doi: 10.1103/PhysRevA.99.032111
[47]	The component frequencies are given by ω={0,±Λ}, Λ=2√(δε)2 +(η△)2. For α=x, the projecting operators are Px(0)=sin θ(\|+>< +\|-\|-><-\|), Px(Λ)=cos θ\|->< +\|, and Px(-Λ)=[Px(Λ)]†. While for α=y, the operators become Py(0)=0, Py(Λ)=i, and Py(-Λ)=-i.
[48]	The component frequencies are given by ω={E+, E-} with E+=ε+√(δε)2 +(η△)2 and E-=ε -√(δε)2 +(η△)2. For u=l, the projecting operators are Ŝl(E+)=cos θ/2\|0>< +\|and Ŝl(E-)=-sin θ/2\|0><-\|. While for u=r, the operators are Ŝr(E+)=sin θ/2\|0><+\|and Ŝr(E-)=cos θ/2\|0><-\|.
[49]	Friedman H M, Agarwalla B K and Segal D 2018 New J. Phys. 20 083026 doi: 10.1088/1367-2630/aad5fc

A polaron theory of quantum thermal transistor in nonequilibrium three-level systems

A polaron theory of quantum thermal transistor in nonequilibrium three-level systems

RichHTML

PDF (PC)

赞

可视化

摘要/Abstract

引用本文

使用本文

参考文献 49

相关文章 15

Metrics

本文评价

推荐阅读 0

[1]	Yang-Yan Guo(郭仰岩), Wei-Hua Han(韩伟华), Xiao-Di Zhang(张晓迪), Jun-Dong Chen(陈俊东), and Fu-Hua Yang(杨富华). Observation of source/drain bias-controlled quantum transport spectrum in junctionless silicon nanowire transistor[J]. 中国物理B, 2022, 31(1): 17701-017701.
[2]	Sai Li(李赛), Tao Chen(陈涛), Jia Liu(刘佳), and Zheng-Yuan Xue(薛正远). Interaction induced non-reciprocal three-level quantum transport[J]. 中国物理B, 2021, 30(6): 60314-060314.
[3]	牛真霞, 邰永航, 石俊生, 张威. Bose-Einstein condensates in an eightfold symmetric optical lattice[J]. 中国物理B, 2020, 29(5): 56103-056103.
[4]	杜倩, 蓝康, 张延惠, 姜露静. Geometric phase of an open double-quantum-dot system detected by a quantum point contact[J]. 中国物理B, 2020, 29(3): 30302-030302.
[5]	马刘红, 韩伟华, 杨富华. Coulomb blockade and hopping transport behaviors of donor-induced quantum dots in junctionless transistors[J]. 中国物理B, 2020, 29(3): 38104-038104.
[6]	陈许敏, 王晨. Unifying quantum heat transfer and superradiant signature in a nonequilibrium collective-qubit system:A polaron-transformed Redfield approach[J]. 中国物理B, 2019, 28(5): 50502-050502.
[7]	罗宇, 李永明. Quantifying quantum non-Markovianity via max-relative entropy[J]. 中国物理B, 2019, 28(4): 40301-040301.
[8]	马刘红, 韩伟华, 赵晓松, 郭仰岩, 窦亚梅, 杨富华. Influence of dopant concentration on electrical quantum transport behaviors in junctionless nanowire transistors[J]. 中国物理B, 2018, 27(8): 88106-088106.
[9]	蔡超逸, 陈剑豪. Electronic transport properties of Co cluster-decorated graphene[J]. 中国物理B, 2018, 27(6): 67304-067304.
[10]	吴薇, 刘辛, 王超. Quantum speed-up capacity in different types of quantum channels for two-qubit open systems[J]. 中国物理B, 2018, 27(6): 60302-060302.
[11]	俞之舟, 许富明. Valley-polarized pumping current in zigzag graphene nanoribbons with different spatial symmetries[J]. 中国物理B, 2018, 27(12): 127203-127203.
[12]	马志远, 李莹, 宋贤江, 杨致, 徐利春, 刘瑞萍, 刘旭光, 胡殿印. Spin-filter effect and spin-polarized optoelectronic properties in annulene-based molecular spintronic devices[J]. 中国物理B, 2017, 26(6): 67201-067201.
[13]	刘一曼, 邵怀华, 周光辉, 朴红光, 潘礼庆, 刘敏. Spin-valley-dependent transport and giant tunneling magnetoresistance in silicene with periodic electromagnetic modulations[J]. 中国物理B, 2017, 26(12): 127303-127303.
[14]	马刘红, 韩伟华, 王昊, 吕奇峰, 张望, 杨香, 杨富华. Electronic transport properties of silicon junctionless nanowire transistors fabricated by femtosecond laser direct writing[J]. 中国物理B, 2016, 25(6): 68103-068103.
[15]	廖剑, 史刚, 刘楠, 李永庆. Electron localization in ultrathin films of three-dimensional topological insulators[J]. 中国物理B, 2016, 25(11): 117201-117201.