中国物理B ›› 2016, Vol. 25 ›› Issue (6): 67305-067305.doi: 10.1088/1674-1056/25/6/067305

• CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES • 上一篇    下一篇

Influence of surface states on deep level transient spectroscopy in AlGaN/GaN heterostructure

Qing Zhu(朱青), Xiao-Hua Ma(马晓华), Wei-Wei Chen(陈伟伟), Bin Hou(侯斌), Jie-Jie Zhu(祝杰杰), Meng Zhang(张濛), Li-Xiang Chen(陈丽香), Yan-Rong Cao(曹艳荣), Yue Hao(郝跃)   

  1. 1 School of Advanced Materials and Nanotechnology, Xidian University, Xi’an 710071, China;
    2 Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi’an 710071, China;
    3 School of Mechano-electric Engineering, Xidian University, Xi’an 710071, China
  • 收稿日期:2015-11-09 修回日期:2016-02-22 出版日期:2016-06-05 发布日期:2016-06-05
  • 通讯作者: Xiao-Hua Ma E-mail:xhma@xidian.edu.cn
  • 基金资助:

    Project supported by the National Key Basic Research Program of China (Grant No. 2011CBA00606), the Program for New Century Excellent Talents in University, China (Grant No. NCET-12-0915), and the National Natural Science Foundation of China (Grant Nos. 61334002 and 61404097).

Influence of surface states on deep level transient spectroscopy in AlGaN/GaN heterostructure

Qing Zhu(朱青)1,2, Xiao-Hua Ma(马晓华)1,2, Wei-Wei Chen(陈伟伟)1,2, Bin Hou(侯斌)1,2, Jie-Jie Zhu(祝杰杰)1,2, Meng Zhang(张濛)1,2, Li-Xiang Chen(陈丽香)1,2, Yan-Rong Cao(曹艳荣)3, Yue Hao(郝跃)2   

  1. 1 School of Advanced Materials and Nanotechnology, Xidian University, Xi’an 710071, China;
    2 Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi’an 710071, China;
    3 School of Mechano-electric Engineering, Xidian University, Xi’an 710071, China
  • Received:2015-11-09 Revised:2016-02-22 Online:2016-06-05 Published:2016-06-05
  • Contact: Xiao-Hua Ma E-mail:xhma@xidian.edu.cn
  • Supported by:

    Project supported by the National Key Basic Research Program of China (Grant No. 2011CBA00606), the Program for New Century Excellent Talents in University, China (Grant No. NCET-12-0915), and the National Natural Science Foundation of China (Grant Nos. 61334002 and 61404097).

RichHTML

0

PDF (PC)

385

赞

摘要：

Deep level transient spectroscopy (DLTS) as a method to investigate deep traps in AlGaN/GaN heterostructure or high electron mobility transistors (HEMTs) has been widely utilized. The DLTS measurements under different bias conditions are carried out in this paper. Two hole-like traps with active energies of Ev+0.47 eV, and Ev+0.10 eV are observed, which are related to surface states. The electron traps with active energies of Ec-0.56 eV are located in the channel, those with Ec-0.33 eV and Ec-0.88 eV are located in the AlGaN layer. The presence of surface states has a strong influence on the detection of electron traps, especially when the electron traps are low in density. The DLTS signal peak height of the electron trap is reduced and even disappears due to the presence of plentiful surface state.

关键词: AlGaN/GaN, hole-like traps, DLTS, surface states

Abstract:

Deep level transient spectroscopy (DLTS) as a method to investigate deep traps in AlGaN/GaN heterostructure or high electron mobility transistors (HEMTs) has been widely utilized. The DLTS measurements under different bias conditions are carried out in this paper. Two hole-like traps with active energies of Ev+0.47 eV, and Ev+0.10 eV are observed, which are related to surface states. The electron traps with active energies of Ec-0.56 eV are located in the channel, those with Ec-0.33 eV and Ec-0.88 eV are located in the AlGaN layer. The presence of surface states has a strong influence on the detection of electron traps, especially when the electron traps are low in density. The DLTS signal peak height of the electron trap is reduced and even disappears due to the presence of plentiful surface state.

Key words: AlGaN/GaN, hole-like traps, DLTS, surface states

中图分类号:  (III-V semiconductors)

  • 73.61.Ey
73.40.Kp (III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions) 73.50.Gr (Charge carriers: generation, recombination, lifetime, trapping, mean free paths) 73.20.At (Surface states, band structure, electron density of states)