中国物理B ›› 2016, Vol. 25 ›› Issue (6): 67304-067304.doi: 10.1088/1674-1056/25/6/067304

• CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES • 上一篇    下一篇

Piezoelectric polarization and quantum size effects on the vertical transport in AlGaN/GaN resonant tunneling diodes

Dakhlaoui H, Almansour S   

  1. Department of Physics, College of Science for Girls, University of Dammam (UOD), Saudi Arabia
  • 收稿日期:2015-08-18 修回日期:2016-02-08 出版日期:2016-06-05 发布日期:2016-06-05
  • 通讯作者: Dakhlaoui H E-mail:h_dakhlaoui@yahoo.fr
  • 基金资助:

    Project supported by the Deanship of Scientific Research of University of Dammam (Grant No. 2014137).

Piezoelectric polarization and quantum size effects on the vertical transport in AlGaN/GaN resonant tunneling diodes

Dakhlaoui H, Almansour S   

  1. Department of Physics, College of Science for Girls, University of Dammam (UOD), Saudi Arabia
  • Received:2015-08-18 Revised:2016-02-08 Online:2016-06-05 Published:2016-06-05
  • Contact: Dakhlaoui H E-mail:h_dakhlaoui@yahoo.fr
  • Supported by:

    Project supported by the Deanship of Scientific Research of University of Dammam (Grant No. 2014137).

摘要:

In this work, the electronic properties of resonant tunneling diodes (RTDs) based on GaN-AlxGa(1-x)N double barriers are investigated by using the non-equilibrium Green functions formalism (NEG). These materials each present a wide conduction band discontinuity and a strong internal piezoelectric field, which greatly affect the electronic transport properties. The electronic density, the transmission coefficient, and the current-voltage characteristics are computed with considering the spontaneous and piezoelectric polarizations. The influence of the quantum size on the transmission coefficient is analyzed by varying GaN quantum well thickness, AlxGa(1-x)N width, and the aluminum concentration xAl. The results show that the transmission coefficient more strongly depends on the thickness of the quantum well than the barrier; it exhibits a series of resonant peaks and valleys as the quantum well width increases. In addition, it is found that the negative differential resistance (NDR) in the current--voltage (I-V) characteristic strongly depends on aluminum concentration xAl. It is shown that the peak-to-valley ratio (PVR) increases with xAl value decreasing. These findings open the door for developing vertical transport nitrides-based ISB devices such as THz lasers and detectors.

关键词: nitride semiconductor, resonant tunneling diode, current density

Abstract:

In this work, the electronic properties of resonant tunneling diodes (RTDs) based on GaN-AlxGa(1-x)N double barriers are investigated by using the non-equilibrium Green functions formalism (NEG). These materials each present a wide conduction band discontinuity and a strong internal piezoelectric field, which greatly affect the electronic transport properties. The electronic density, the transmission coefficient, and the current-voltage characteristics are computed with considering the spontaneous and piezoelectric polarizations. The influence of the quantum size on the transmission coefficient is analyzed by varying GaN quantum well thickness, AlxGa(1-x)N width, and the aluminum concentration xAl. The results show that the transmission coefficient more strongly depends on the thickness of the quantum well than the barrier; it exhibits a series of resonant peaks and valleys as the quantum well width increases. In addition, it is found that the negative differential resistance (NDR) in the current--voltage (I-V) characteristic strongly depends on aluminum concentration xAl. It is shown that the peak-to-valley ratio (PVR) increases with xAl value decreasing. These findings open the door for developing vertical transport nitrides-based ISB devices such as THz lasers and detectors.

Key words: nitride semiconductor, resonant tunneling diode, current density

中图分类号:  (III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions)

  • 73.40.Kp
75.50.Pp (Magnetic semiconductors) 85.75.-d (Magnetoelectronics; spintronics: devices exploiting spin polarized transport or integrated magnetic fields)