中国物理B ›› 2015, Vol. 24 ›› Issue (8): 88503-088503.doi: 10.1088/1674-1056/24/8/088503

• INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY • 上一篇    下一篇

Low frequency noise and radiation response in the partially depleted SOI MOSFETs with ion implanted buried oxide

刘远a, 陈海波b, 刘玉荣c, 王信d, 恩云飞a, 李斌c, 陆裕东a   

  1. a Science and Technology on Reliability Physics and Application of Electronic Component Laboratory, CEPREI, Guangzhou 510610, China;
    b No. 58th Research Institute of China Electronics Technology Group Corporation, Wuxi 214035, China;
    c School of Electronic and Information Engineering, South China University of Technology, Guangzhou 510640, China;
    d Xinjiang Technical Institute of Physics & Chemistry, Chinese Academy of Sciences, Urumqi 830011, China
  • 收稿日期:2014-11-28 修回日期:2015-03-28 出版日期:2015-08-05 发布日期:2015-08-05
  • 基金资助:
    Project supported by the National Natural Science Foundation of China (Grant Nos. 61204112 and 61204116).

Low frequency noise and radiation response in the partially depleted SOI MOSFETs with ion implanted buried oxide

Liu Yuan (刘远)a, Chen Hai-Bo (陈海波)b, Liu Yu-Rong (刘玉荣)c, Wang Xin (王信)d, En Yun-Fei (恩云飞)a, Li Bin (李斌)c, Lu Yu-Dong (陆裕东)a   

  1. a Science and Technology on Reliability Physics and Application of Electronic Component Laboratory, CEPREI, Guangzhou 510610, China;
    b No. 58th Research Institute of China Electronics Technology Group Corporation, Wuxi 214035, China;
    c School of Electronic and Information Engineering, South China University of Technology, Guangzhou 510640, China;
    d Xinjiang Technical Institute of Physics & Chemistry, Chinese Academy of Sciences, Urumqi 830011, China
  • Received:2014-11-28 Revised:2015-03-28 Online:2015-08-05 Published:2015-08-05
  • Contact: Lu Yu-Dong E-mail:luyd@ceprei.com
  • Supported by:
    Project supported by the National Natural Science Foundation of China (Grant Nos. 61204112 and 61204116).

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摘要： Low frequency noise behaviors of partially depleted silicon-on-insulator (PDSOI) n-channel metal-oxide semiconductors (MOS) transistors with and without ion implantation into the buried oxide are investigated in this paper. Owing to ion implantation-induced electron traps in the buried oxide and back interface states, back gate threshold voltage increases from 44.48 V to 51.47 V and sub-threshold swing increases from 2.47 V/dec to 3.37 V/dec, while electron field effect mobility decreases from 475.44 cm2/V·s to 363.65 cm2/V·s. In addition, the magnitude of normalized low frequency noise also greatly increases, which indicates that the intrinsic electronic performances are degenerated after ion implantation processing. According to carrier number fluctuation theory, the extracted flat-band voltage noise power spectral densities in the PDSOI devices with and without ion implantation are equal to 7×10-10 V2·Hz-1 and 2.7×10-8 V2·Hz-1, respectively, while the extracted average trap density in the buried oxide increases from 1.42×1017 cm-3·eV-1 to 6.16×1018 cm-3·eV-1. Based on carrier mobility fluctuation theory, the extracted average Hooge's parameter in these devices increases from 3.92×10-5 to 1.34×10-2 after ion implantation processing. Finally, radiation responses in the PDSOI devices are investigated. Owing to radiation-induced positive buried oxide trapped charges, back gate threshold voltage decreases with the increase of the total dose. After radiation reaches up to a total dose of 1 M·rad(si), the shifts of back gate threshold voltage in the SOI devices with and without ion implantation are-10.82 V and-31.84 V, respectively. The low frequency noise behaviors in these devices before and after radiation are also compared and discussed.

关键词: silicon on insulator, ion implantation, ionizing radiation, low frequency noise

Abstract: Low frequency noise behaviors of partially depleted silicon-on-insulator (PDSOI) n-channel metal-oxide semiconductors (MOS) transistors with and without ion implantation into the buried oxide are investigated in this paper. Owing to ion implantation-induced electron traps in the buried oxide and back interface states, back gate threshold voltage increases from 44.48 V to 51.47 V and sub-threshold swing increases from 2.47 V/dec to 3.37 V/dec, while electron field effect mobility decreases from 475.44 cm2/V·s to 363.65 cm2/V·s. In addition, the magnitude of normalized low frequency noise also greatly increases, which indicates that the intrinsic electronic performances are degenerated after ion implantation processing. According to carrier number fluctuation theory, the extracted flat-band voltage noise power spectral densities in the PDSOI devices with and without ion implantation are equal to 7×10-10 V2·Hz-1 and 2.7×10-8 V2·Hz-1, respectively, while the extracted average trap density in the buried oxide increases from 1.42×1017 cm-3·eV-1 to 6.16×1018 cm-3·eV-1. Based on carrier mobility fluctuation theory, the extracted average Hooge's parameter in these devices increases from 3.92×10-5 to 1.34×10-2 after ion implantation processing. Finally, radiation responses in the PDSOI devices are investigated. Owing to radiation-induced positive buried oxide trapped charges, back gate threshold voltage decreases with the increase of the total dose. After radiation reaches up to a total dose of 1 M·rad(si), the shifts of back gate threshold voltage in the SOI devices with and without ion implantation are-10.82 V and-31.84 V, respectively. The low frequency noise behaviors in these devices before and after radiation are also compared and discussed.

Key words: silicon on insulator, ion implantation, ionizing radiation, low frequency noise

中图分类号:  (Field effect devices)

  • 85.30.Tv
73.40.Qv (Metal-insulator-semiconductor structures (including semiconductor-to-insulator)) 85.40.Qx (Microcircuit quality, noise, performance, and failure analysis) 61.80.Ed (γ-ray effects)