中国物理B ›› 2018, Vol. 27 ›› Issue (9): 96104-096104.doi: 10.1088/1674-1056/27/9/096104

• CONDENSED MATTER: STRUCTURAL, MECHANICAL, AND THERMAL PROPERTIES • 上一篇    下一篇

Structural and electrical properties of carbon-ion-implanted ultrananocrystalline diamond films

Hui Xu(徐辉), Jian-Jun Liu(刘建军), Hai-Tao Ye(叶海涛), D J Coathup, A V Khomich, Xiao-Jun Hu(胡晓君)   

  1. 1 College of Materials Science and Engineering, Zhejiang University of Technology, Hangzhou 310014, China;
    2 Aston Institute of Materials Research, School of Engineering and Applied Science, Aston University, Birmingham B4 7ET, United Kingdom;
    3 V. A. Kotelnikov Institute of Radio-Engineering and Electronics, Russian Academy of Sciences, Moscow 141190, Russia;
    4 National Research Nuclear University MEPhI, Moscow, Russia
  • 收稿日期:2018-04-13 修回日期:2018-06-17 出版日期:2018-09-05 发布日期:2018-09-05
  • 通讯作者: Hai-Tao Ye, Xiao-Jun Hu E-mail:haitao.ye@leicester.ac.uk;huxj@zjut.edu.cn
  • 基金资助:

    Project supported by the National Natural Science Foundation of China (Grant Nos. 50972129 and 50602039), the International Science Technology Cooperation Program of China (Grant No. 2014DFR51160), the National Key Research and Development Program of China (Grant No. 2016YFE0133200), European Union's Horizon 2020 Research and Innovation Staff Exchange (RISE) Scheme (Grant No. 734578), One Belt and One Road International Cooperation Project from the Key Research and Development Program of Zhejiang Province, China (Grant No. 2018C04021), and Xinmiao Talents Program of Zhejiang Province, China (Grant No. 2017R403078).

Structural and electrical properties of carbon-ion-implanted ultrananocrystalline diamond films

Hui Xu(徐辉)1, Jian-Jun Liu(刘建军)1, Hai-Tao Ye(叶海涛)2, D J Coathup2, A V Khomich3,4, Xiao-Jun Hu(胡晓君)1   

  1. 1 College of Materials Science and Engineering, Zhejiang University of Technology, Hangzhou 310014, China;
    2 Aston Institute of Materials Research, School of Engineering and Applied Science, Aston University, Birmingham B4 7ET, United Kingdom;
    3 V. A. Kotelnikov Institute of Radio-Engineering and Electronics, Russian Academy of Sciences, Moscow 141190, Russia;
    4 National Research Nuclear University MEPhI, Moscow, Russia
  • Received:2018-04-13 Revised:2018-06-17 Online:2018-09-05 Published:2018-09-05
  • Contact: Hai-Tao Ye, Xiao-Jun Hu E-mail:haitao.ye@leicester.ac.uk;huxj@zjut.edu.cn
  • Supported by:

    Project supported by the National Natural Science Foundation of China (Grant Nos. 50972129 and 50602039), the International Science Technology Cooperation Program of China (Grant No. 2014DFR51160), the National Key Research and Development Program of China (Grant No. 2016YFE0133200), European Union's Horizon 2020 Research and Innovation Staff Exchange (RISE) Scheme (Grant No. 734578), One Belt and One Road International Cooperation Project from the Key Research and Development Program of Zhejiang Province, China (Grant No. 2018C04021), and Xinmiao Talents Program of Zhejiang Province, China (Grant No. 2017R403078).

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摘要：

We investigate the structural and electrical properties of carbon-ion-implanted ultrananocrystalline diamond (UNCD) films. Impedance spectroscopy measurements show that the impedance of diamond grains is relatively stable, while that of grain boundaries (GBs) (Rb) significantly increases after the C+ implantation, and decreases with the increase in the annealing temperature (Ta) from 650 ℃ to 1000 ℃. This implies that the C+ implantation has a more significant impact on the conductivity of GBs. Conductive atomic force microscopy demonstrates that the number of conductive sites increases in GB regions at Ta above 900 ℃, owing to the formation of a nanographitic phase confirmed by high-resolution transmission electronic microscopy. Visible-light Raman spectra show that resistive trans-polyacetylene oligomers desorb from GBs at Ta above 900 ℃, which leads to lower Rb of samples annealed at 900 and 1000 ℃. With the increase in Ta to 1000 ℃, diamond grains become smaller with longer GBs modified by a more ordered nanographitic phase, supplying more conductive sites and leading to a lower Rb.

关键词: ultrananocrystalline diamond, C-ion implantation, annealing, electrical properties

Abstract:

We investigate the structural and electrical properties of carbon-ion-implanted ultrananocrystalline diamond (UNCD) films. Impedance spectroscopy measurements show that the impedance of diamond grains is relatively stable, while that of grain boundaries (GBs) (Rb) significantly increases after the C+ implantation, and decreases with the increase in the annealing temperature (Ta) from 650 ℃ to 1000 ℃. This implies that the C+ implantation has a more significant impact on the conductivity of GBs. Conductive atomic force microscopy demonstrates that the number of conductive sites increases in GB regions at Ta above 900 ℃, owing to the formation of a nanographitic phase confirmed by high-resolution transmission electronic microscopy. Visible-light Raman spectra show that resistive trans-polyacetylene oligomers desorb from GBs at Ta above 900 ℃, which leads to lower Rb of samples annealed at 900 and 1000 ℃. With the increase in Ta to 1000 ℃, diamond grains become smaller with longer GBs modified by a more ordered nanographitic phase, supplying more conductive sites and leading to a lower Rb.

Key words: ultrananocrystalline diamond, C-ion implantation, annealing, electrical properties

中图分类号:  (Nanocrystalline materials)

  • 61.82.Rx
81.05.U- (Carbon/carbon-based materials) 81.05.uj (Diamond/nanocarbon composites) 81.07.-b (Nanoscale materials and structures: fabrication and characterization)