中国物理B ›› 2021, Vol. 30 ›› Issue (8): 86107-086107.doi: 10.1088/1674-1056/abff43
所属专题： SPECIAL TOPIC — Ion beam modification of materials and applications
Formation of nano-twinned 3C-SiC grains in Fe-implanted 6H-SiC after 1500-℃ annealing
Zheng Han(韩铮)1, Xu Wang(王旭)1,†, Jiao Wang(王娇)2, Qing Liao(廖庆)3, and Bingsheng Li(李炳生)3,‡
- 1 Nuclear Power Institute of China, Chengdu 610200, China;
2 Sichuan Vocational and Technical College of Communications, Chengdu 611130, China;
3 State Key Laboratory for Environment-friendly Energy Materials, Southwest University of Science and Technology, Mianyang 621010, China
Formation of nano-twinned 3C-SiC grains in Fe-implanted 6H-SiC after 1500-℃ annealing
Zheng Han(韩铮)1, Xu Wang(王旭)1,†, Jiao Wang(王娇)2, Qing Liao(廖庆)3, and Bingsheng Li(李炳生)3,‡
- 1 Nuclear Power Institute of China, Chengdu 610200, China;
2 Sichuan Vocational and Technical College of Communications, Chengdu 611130, China;
3 State Key Laboratory for Environment-friendly Energy Materials, Southwest University of Science and Technology, Mianyang 621010, China
摘要： A nano-twinned microstructure was found in amorphous SiC after high-temperature annealing. Grazing incidence x-ray diffraction, high-resolution transmission electron microscopy, and electron diffraction were performed to characterize the microstructure and phase transition in the recrystallization layer. After 1500 ℃ or 2-h annealing, 3C-SiC grains and numerous stacking faults on the {111} planes were visible. Some 3C-SiC grains have nano-twinned structure with {011} planes. Between the nano-twinned 3C-SiC grains, there is a stacking fault, indicating that the formation mechanisms of the nano-twinned structure are related to the disorder of Si atoms. The increase in the twin thickness with increasing annealing temperature demonstrates that the nano-twinned structure can sink for lattice defects, in order to improve the radiation tolerance of SiC.
中图分类号: (Ion radiation effects)
- 61.80.Jh