Surface chemical disorder and lattice strain of GaN implanted by 3-MeV Fe10+ ions

doi:10.1088/1674-1056/ac373f

中国物理B ›› 2022, Vol. 31 ›› Issue (4): 46103-046103.doi: 10.1088/1674-1056/ac373f

Surface chemical disorder and lattice strain of GaN implanted by 3-MeV Fe¹⁰⁺ ions

Jun-Yuan Yang(杨浚源)¹, Zong-Kai Feng(冯棕楷)¹, Ling Jiang(蒋领)¹, Jie Song(宋杰)¹, Xiao-Xun He(何晓珣)¹, Li-Ming Chen(陈黎明)¹, Qing Liao(廖庆)¹, Jiao Wang(王姣)², and Bing-Sheng Li(李炳生)^1,†

1 State Key Laboratory for Environment-friendly Energy Materials, Southwest University of Science and Technology, Mianyang 621010, China;
2 Sichuan Vocational and Technical College of Communications, Chengdu 611130, China

收稿日期:2021-09-19 修回日期:2021-10-27 接受日期:2021-11-06 出版日期:2022-03-16 发布日期:2022-03-16
通讯作者: Bing-Sheng Li E-mail:libingshengmvp@163.com
基金资助:
Project supported by the National Natural Science Foundation of China (Grant No. 12075194) and the Fund of Collage Student Innovation and Entrepreneurship Training Program (Grant No. S202010619053). We appreciate the staff in the 320-kV high-voltage platform in the Institute of Modern Physics, Chinese Academy of Sciences for their assistance in ion implantation experiment.

Surface chemical disorder and lattice strain of GaN implanted by 3-MeV Fe¹⁰⁺ ions

1 State Key Laboratory for Environment-friendly Energy Materials, Southwest University of Science and Technology, Mianyang 621010, China;
2 Sichuan Vocational and Technical College of Communications, Chengdu 611130, China

Received:2021-09-19 Revised:2021-10-27 Accepted:2021-11-06 Online:2022-03-16 Published:2022-03-16
Contact: Bing-Sheng Li E-mail:libingshengmvp@163.com
Supported by:
Project supported by the National Natural Science Foundation of China (Grant No. 12075194) and the Fund of Collage Student Innovation and Entrepreneurship Training Program (Grant No. S202010619053). We appreciate the staff in the 320-kV high-voltage platform in the Institute of Modern Physics, Chinese Academy of Sciences for their assistance in ion implantation experiment.

摘要/Abstract

摘要： Chemical disorder on the surface and lattice strain in GaN implanted by Fe¹⁰⁺ ions are investigated. In this study, 3-MeV Fe¹⁰⁺ ions fluence ranges from 1×10¹³ ions/cm² to 5×10¹⁵ ions/cm² at room temperature. X-ray photoelectron spectroscopy, high-resolution x-ray diffraction, and high-resolution transmission electron microscopy were used to characterize lattice disorder. The transition of Ga-N bonds to oxynitride bonding is caused by ion sputtering. The change of tensile strain out-of-plane with fluence was measured. Lattice disorder due to the formation of stacking faults prefers to occur on the basal plane.

关键词: GaN, ion implantation, chemical disorder, lattice strain, microstructure

Abstract: Chemical disorder on the surface and lattice strain in GaN implanted by Fe¹⁰⁺ ions are investigated. In this study, 3-MeV Fe¹⁰⁺ ions fluence ranges from 1×10¹³ ions/cm² to 5×10¹⁵ ions/cm² at room temperature. X-ray photoelectron spectroscopy, high-resolution x-ray diffraction, and high-resolution transmission electron microscopy were used to characterize lattice disorder. The transition of Ga-N bonds to oxynitride bonding is caused by ion sputtering. The change of tensile strain out-of-plane with fluence was measured. Lattice disorder due to the formation of stacking faults prefers to occur on the basal plane.

Key words: GaN, ion implantation, chemical disorder, lattice strain, microstructure

中图分类号: (Physical radiation effects, radiation damage)

61.80.-x

61.80.Jh (Ion radiation effects) 68.37.Lp (Transmission electron microscopy (TEM)) 78.30.Fs (III-V and II-VI semiconductors)

Jun-Yuan Yang(杨浚源), Zong-Kai Feng(冯棕楷), Ling Jiang(蒋领), Jie Song(宋杰), Xiao-Xun He(何晓珣), Li-Ming Chen(陈黎明), Qing Liao(廖庆), Jiao Wang(王姣), and Bing-Sheng Li(李炳生). Surface chemical disorder and lattice strain of GaN implanted by 3-MeV Fe¹⁰⁺ ions[J]. 中国物理B, 2022, 31(4): 46103-046103.

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Surface chemical disorder and lattice strain of GaN implanted by 3-MeV Fe¹⁰⁺ ions

Surface chemical disorder and lattice strain of GaN implanted by 3-MeV Fe¹⁰⁺ ions

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