中国物理B ›› 2021, Vol. 30 ›› Issue (8): 86104-086104.doi: 10.1088/1674-1056/abf640

所属专题： SPECIAL TOPIC — Ion beam modification of materials and applications

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Mechanism of defect evolution in H+ and He+ implanted InP

Ren-Jie Liu(刘仁杰)1,2,†, Jia-Jie Lin(林家杰)3,4,†‡, N Daghbouj5, Jia-Liang Sun(孙嘉良)3,6, Tian-Gui You(游天桂)3,§, Peng Gao(高鹏)7, Nie-Feng Sun(孙聂枫)4,8, and Min Liao(廖敏)1,2   

  1. 1 Key Laboratory of Low Dimensional Materials and Application Technology of Ministry of Education, School of Materials Science and Engineering, Xiangtan University, Xiangtan 411105, China;
    2 Hunan Provincial Key Laboratory of Thin Film Materials and Devices, School of Materials Science and Engineering, Xiangtan University, Xiangtan 411105, China;
    3 State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China;
    4 China Nanhu Academy of Electronics and Information Technology, Jiaxing 314000, China;
    5 Department of Control Engineering, Faculty of Electrical Engineering, Czech Technical University in Prague, Technická 2, 16000 Prague 6, Czechia;
    6 Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China;
    7 Science and Technology on Power Sources Laboratory, Tianjin Institute of Power Sources, Tianjin 300384, China;
    8 The 13 th Research Institute, CETC, Shijiazhuang 050051, China
  • 收稿日期:2021-01-26 修回日期:2021-03-10 接受日期:2021-04-09 出版日期:2021-07-16 发布日期:2021-08-02
  • 通讯作者: Jia-Jie Lin, Tian-Gui You E-mail:jjlin@mail.sim.ac.cn;t.you@mail.sim.ac.cn
  • 基金资助:
    Project supported by the National Key R&D Program of China (Grant No. 2017YFE0131300), the National Natural Science Foundation of China (Grant Nos. 61874128, 61851406, and 11705262), Frontier Science Key Program of Chinese Academy of Sciences (Grant Nos. QYZDY-SSW-JSC032 and ZDBS-LY-JSC009), Chinese-Austrian Cooperative R&D Project (Grant No. GJHZ201950), Program of Shanghai Academic Research Leader (Grant No. 19XD1404600), K. C. Wong Education Foundation (Grant No. GJTD-2019-11), and NCBiR within the Polish-China (Grant No. WPC/130/NIR-Si/2018).

Mechanism of defect evolution in H+ and He+ implanted InP

Ren-Jie Liu(刘仁杰)1,2,†, Jia-Jie Lin(林家杰)3,4,†‡, N Daghbouj5, Jia-Liang Sun(孙嘉良)3,6, Tian-Gui You(游天桂)3,§, Peng Gao(高鹏)7, Nie-Feng Sun(孙聂枫)4,8, and Min Liao(廖敏)1,2   

  1. 1 Key Laboratory of Low Dimensional Materials and Application Technology of Ministry of Education, School of Materials Science and Engineering, Xiangtan University, Xiangtan 411105, China;
    2 Hunan Provincial Key Laboratory of Thin Film Materials and Devices, School of Materials Science and Engineering, Xiangtan University, Xiangtan 411105, China;
    3 State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China;
    4 China Nanhu Academy of Electronics and Information Technology, Jiaxing 314000, China;
    5 Department of Control Engineering, Faculty of Electrical Engineering, Czech Technical University in Prague, Technická 2, 16000 Prague 6, Czechia;
    6 Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China;
    7 Science and Technology on Power Sources Laboratory, Tianjin Institute of Power Sources, Tianjin 300384, China;
    8 The 13 th Research Institute, CETC, Shijiazhuang 050051, China
  • Received:2021-01-26 Revised:2021-03-10 Accepted:2021-04-09 Online:2021-07-16 Published:2021-08-02
  • Contact: Jia-Jie Lin, Tian-Gui You E-mail:jjlin@mail.sim.ac.cn;t.you@mail.sim.ac.cn
  • Supported by:
    Project supported by the National Key R&D Program of China (Grant No. 2017YFE0131300), the National Natural Science Foundation of China (Grant Nos. 61874128, 61851406, and 11705262), Frontier Science Key Program of Chinese Academy of Sciences (Grant Nos. QYZDY-SSW-JSC032 and ZDBS-LY-JSC009), Chinese-Austrian Cooperative R&D Project (Grant No. GJHZ201950), Program of Shanghai Academic Research Leader (Grant No. 19XD1404600), K. C. Wong Education Foundation (Grant No. GJTD-2019-11), and NCBiR within the Polish-China (Grant No. WPC/130/NIR-Si/2018).

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摘要： The defect evolution in InP with the 75 keV H+ and 115 keV He+ implantation at room temperature after subsequent annealing has been investigated in detail. With the same ion implantation fluence, the He+ implantation caused much broader damage distribution accompanied by much higher out-of-plane strain with respect to the H+ implanted InP. After annealing, the H+ implanted InP did not show any blistering or exfoliation on the surface even at the high fluence and the H2 molecules were stored in the heterogeneously oriented platelet defects. However, the He molecules were stored into the large bubbles which relaxed toward the free surface, creating blisters at the high fluence.

关键词: ion implantation, defect evolution, ion-slicing, damaged band

Abstract: The defect evolution in InP with the 75 keV H+ and 115 keV He+ implantation at room temperature after subsequent annealing has been investigated in detail. With the same ion implantation fluence, the He+ implantation caused much broader damage distribution accompanied by much higher out-of-plane strain with respect to the H+ implanted InP. After annealing, the H+ implanted InP did not show any blistering or exfoliation on the surface even at the high fluence and the H2 molecules were stored in the heterogeneously oriented platelet defects. However, the He molecules were stored into the large bubbles which relaxed toward the free surface, creating blisters at the high fluence.

Key words: ion implantation, defect evolution, ion-slicing, damaged band

中图分类号:  (Defects and impurities in crystals; microstructure)

  • 61.72.-y
61.72.Cc (Kinetics of defect formation and annealing) 61.80.Jh (Ion radiation effects) 61.82.Fk (Semiconductors)