Influence of white light illumination on the performance of a-IGZO thin film transistor under positive gate-bias stress

doi:10.1088/1674-1056/24/8/088504

中国物理B ›› 2015, Vol. 24 ›› Issue (8): 88504-088504.doi: 10.1088/1674-1056/24/8/088504

• INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY • 上一篇下一篇

Influence of white light illumination on the performance of a-IGZO thin film transistor under positive gate-bias stress

汤兰凤^{a b}, 于广^{a b}, 陆海^{a b}, 武辰飞^{a b}, 钱慧敏^{a b}, 周东^{a b}, 张荣^{a b}, 郑有炓^{a b}, 黄晓明^c

a Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Nanjing University, Nanjing 210093, China;
b Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, China;
c Peter Grünberg Research Center, Nanjing University of Posts and Telecommunications, Nanjing 210003, China

收稿日期:2014-12-11 修回日期:2015-03-11 出版日期:2015-08-05 发布日期:2015-08-05
基金资助:
Project supported by the State Key Program for Basic Research of China (Grant Nos. 2011CB301900 and 2011CB922100) and the Priority Academic Program Development of Higher Education Institutions of Jiangsu Province, China.

Influence of white light illumination on the performance of a-IGZO thin film transistor under positive gate-bias stress

Tang Lan-Feng (汤兰凤)^{a b}, Yu Guang (于广)^{a b}, Lu Hai (陆海)^{a b}, Wu Chen-Fei (武辰飞)^{a b}, Qian Hui-Min (钱慧敏)^{a b}, Zhou Dong (周东)^{a b}, Zhang Rong (张荣)^{a b}, Zheng You-Dou (郑有炓)^{a b}, Huang Xiao-Ming (黄晓明)^c

a Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Nanjing University, Nanjing 210093, China;
b Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, China;
c Peter Grünberg Research Center, Nanjing University of Posts and Telecommunications, Nanjing 210003, China

Received:2014-12-11 Revised:2015-03-11 Online:2015-08-05 Published:2015-08-05
Contact: Lu Hai E-mail:hailu@nju.edu.cn
Supported by:
Project supported by the State Key Program for Basic Research of China (Grant Nos. 2011CB301900 and 2011CB922100) and the Priority Academic Program Development of Higher Education Institutions of Jiangsu Province, China.

摘要/Abstract

摘要： The influence of white light illumination on the stability of an amorphous InGaZnO thin film transistor is investigated in this work. Under prolonged positive gate bias stress, the device illuminated by white light exhibits smaller positive threshold voltage shift than the device stressed under dark. There are simultaneous degradations of field-effect mobility for both stressed devices, which follows a similar trend to that of the threshold voltage shift. The reduced threshold voltage shift under illumination is explained by a competition between bias-induced interface carrier trapping effect and photon-induced carrier detrapping effect. It is further found that white light illumination could even excite and release trapped carriers originally exiting at the device interface before positive gate bias stress, so that the threshold voltage could recover to an even lower value than that in an equilibrium state. The effect of photo-excitation of oxygen vacancies within the a-IGZO film is also discussed.

关键词: amorphous indium gallium zinc oxide, illumination, detrapping effect, thin film transistors, interface states

Abstract: The influence of white light illumination on the stability of an amorphous InGaZnO thin film transistor is investigated in this work. Under prolonged positive gate bias stress, the device illuminated by white light exhibits smaller positive threshold voltage shift than the device stressed under dark. There are simultaneous degradations of field-effect mobility for both stressed devices, which follows a similar trend to that of the threshold voltage shift. The reduced threshold voltage shift under illumination is explained by a competition between bias-induced interface carrier trapping effect and photon-induced carrier detrapping effect. It is further found that white light illumination could even excite and release trapped carriers originally exiting at the device interface before positive gate bias stress, so that the threshold voltage could recover to an even lower value than that in an equilibrium state. The effect of photo-excitation of oxygen vacancies within the a-IGZO film is also discussed.

Key words: amorphous indium gallium zinc oxide, illumination, detrapping effect, thin film transistors, interface states

中图分类号: (Microelectronics: LSI, VLSI, ULSI; integrated circuit fabrication technology)

85.40.-e

73.61.Jc (Amorphous semiconductors; glasses) 85.30.Tv (Field effect devices) 73.40.Qv (Metal-insulator-semiconductor structures (including semiconductor-to-insulator))

汤兰凤, 于广, 陆海, 武辰飞, 钱慧敏, 周东, 张荣, 郑有炓, 黄晓明. Influence of white light illumination on the performance of a-IGZO thin film transistor under positive gate-bias stress[J]. 中国物理B, 2015, 24(8): 88504-088504.

Tang Lan-Feng (汤兰凤), Yu Guang (于广), Lu Hai (陆海), Wu Chen-Fei (武辰飞), Qian Hui-Min (钱慧敏), Zhou Dong (周东), Zhang Rong (张荣), Zheng You-Dou (郑有炓), Huang Xiao-Ming (黄晓明). Influence of white light illumination on the performance of a-IGZO thin film transistor under positive gate-bias stress[J]. Chin. Phys. B, 2015, 24(8): 88504-088504.

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Influence of white light illumination on the performance of a-IGZO thin film transistor under positive gate-bias stress

Influence of white light illumination on the performance of a-IGZO thin film transistor under positive gate-bias stress

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