›› 2015, Vol. 24 ›› Issue (4): 48504-048504.doi: 10.1088/1674-1056/24/4/048504

• INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY • 上一篇    下一篇

Analysis on high speed response of a uni-traveling-carrier double hetero-junction phototransistor

江之韵, 谢红云, 张良浩, 张万荣, 胡瑞心, 霍文娟   

  1. College of Electronic Information and Control Engineering, Beijing University of Technology, Beijing 100124, China
  • 收稿日期:2014-09-09 修回日期:2014-11-20 出版日期:2015-04-05 发布日期:2015-04-05
  • 基金资助:
    Project supported by the National Natural Science Foundation of China (Grant No. 61006044), the Natural Science Foundation of Beijing, China (Grant Nos. 4122014 and 4142007), and the Fund from the Beijing Municipal Education Committee, China (Grant No. KM200910005001).

Analysis on high speed response of a uni-traveling-carrier double hetero-junction phototransistor

Jiang Zhi-Yun (江之韵), Xie Hong-Yun (谢红云), Zhang Liang-Hao (张良浩), Zhang Wan-Rong (张万荣), Hu Rui-Xin (胡瑞心), Huo Wen-Juan (霍文娟)   

  1. College of Electronic Information and Control Engineering, Beijing University of Technology, Beijing 100124, China
  • Received:2014-09-09 Revised:2014-11-20 Online:2015-04-05 Published:2015-04-05
  • Contact: Xie Hong-Yun E-mail:xiehongyun@bjut.edu.cn
  • Supported by:
    Project supported by the National Natural Science Foundation of China (Grant No. 61006044), the Natural Science Foundation of Beijing, China (Grant Nos. 4122014 and 4142007), and the Fund from the Beijing Municipal Education Committee, China (Grant No. KM200910005001).

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摘要： In this paper, the positive influence of a uni-traveling-carrier (UTC) structure to ease the contract between the responsivity and working speed of the InP-based double hetero-junction phototransistor (DHPT) is illustrated in detail. Different results under electrical bias, optical bias or combined electrical and optical bias are analyzed for an excellent UTC-DHPT performance. The results show that when the UTC-DHPT operates at three-terminal (3T) working mode with combined electrical bias and optical bias in base, it keeps a high optical responsivity of 34.72 A/W and the highest optical transition frequency of 120 GHz. The current gain of the 3T UTC-DHPT under 1.55-μm light illuminations reaches 62 dB. This indicates that the combined base electrical bias and optical bias of 3T UTC-DHPT can make sure that the UTC-DHPT provides high optical current gain and high optical transition frequency simultaneously.

关键词: uni-traveling-carrier, double hetero-junction phototransistor, optical responsivity, optical transition frequency

Abstract: In this paper, the positive influence of a uni-traveling-carrier (UTC) structure to ease the contract between the responsivity and working speed of the InP-based double hetero-junction phototransistor (DHPT) is illustrated in detail. Different results under electrical bias, optical bias or combined electrical and optical bias are analyzed for an excellent UTC-DHPT performance. The results show that when the UTC-DHPT operates at three-terminal (3T) working mode with combined electrical bias and optical bias in base, it keeps a high optical responsivity of 34.72 A/W and the highest optical transition frequency of 120 GHz. The current gain of the 3T UTC-DHPT under 1.55-μm light illuminations reaches 62 dB. This indicates that the combined base electrical bias and optical bias of 3T UTC-DHPT can make sure that the UTC-DHPT provides high optical current gain and high optical transition frequency simultaneously.

Key words: uni-traveling-carrier, double hetero-junction phototransistor, optical responsivity, optical transition frequency

中图分类号:  (Photodiodes; phototransistors; photoresistors)

  • 85.60.Dw
85.60.Gz (Photodetectors (including infrared and CCD detectors)) 78.55.Cr (III-V semiconductors) 78.20.Bh (Theory, models, and numerical simulation)