Investigation of high sensitivity radio-frequency readout circuit based on AlGaN/GaN high electron mobility transistor

doi:10.1088/1674-1056/24/10/105201

中国物理B ›› 2015, Vol. 24 ›› Issue (10): 105201-105201.doi: 10.1088/1674-1056/24/10/105201

• PHYSICS OF GASES, PLASMAS, AND ELECTRIC DISCHARGES • 上一篇下一篇

Investigation of high sensitivity radio-frequency readout circuit based on AlGaN/GaN high electron mobility transistor

张晓渝^a, 谭仁兵^b, 孙建东^a, 李欣幸^a, 周宇^a, 吕利^a, 秦华^a

a Key Laboratory of Nanodevices and Applications, Suzhou Institute of Nano-tech and Nano-bionics, Chinese Academy of Sciences, Suzhou 215125, China;
b School of Mathematics and Physics, Chongqing University of Science and Technology, Chongqing 401331, China

收稿日期:2015-03-10 修回日期:2015-05-17 出版日期:2015-10-05 发布日期:2015-10-05
基金资助:
Project supported by the National Natural Science Foundation of China (Grant No. 61107093), the Suzhou Science and Technology Project, China (Grant No. ZXG2012024), and the Youth Innovation Promotion Association, Chinese Academy of Sciences (Grant No. 2012243).

Investigation of high sensitivity radio-frequency readout circuit based on AlGaN/GaN high electron mobility transistor

Zhang Xiao-Yu (张晓渝)^a, Tan Ren-Bing (谭仁兵)^b, Sun Jian-Dong (孙建东)^a, Li Xin-Xing (李欣幸)^a, Zhou Yu (周宇)^a, Lü Li (吕利)^a, Qin Hua (秦华)^a

a Key Laboratory of Nanodevices and Applications, Suzhou Institute of Nano-tech and Nano-bionics, Chinese Academy of Sciences, Suzhou 215125, China;
b School of Mathematics and Physics, Chongqing University of Science and Technology, Chongqing 401331, China

Received:2015-03-10 Revised:2015-05-17 Online:2015-10-05 Published:2015-10-05
Contact: Zhang Xiao-Yu, Qin Hua E-mail:xyzhang2010@sinano.ac.cn;hqin2007@sinano.ac.cn
Supported by:
Project supported by the National Natural Science Foundation of China (Grant No. 61107093), the Suzhou Science and Technology Project, China (Grant No. ZXG2012024), and the Youth Innovation Promotion Association, Chinese Academy of Sciences (Grant No. 2012243).

摘要/Abstract

摘要： An AlGaN/GaN high electron mobility transistor (HEMT) device is prepared by using a semiconductor nanofabrication process. A reflective radio-frequency (RF) readout circuit is designed and the HEMT device is assembled in an RF circuit through a coplanar waveguide transmission line. A gate capacitor of the HEMT and a surface-mounted inductor on the transmission line are formed to generate LC resonance. By tuning the gate voltage V_g, the variations of gate capacitance and conductance of the HEMT are reflected sensitively from the resonance frequency and the magnitude of the RF reflection signal. The aim of the designed RF readout setup is to develop a highly sensitive HEMT-based detector.

关键词: radio-frequency circuit, high electron mobility transistor

Abstract: An AlGaN/GaN high electron mobility transistor (HEMT) device is prepared by using a semiconductor nanofabrication process. A reflective radio-frequency (RF) readout circuit is designed and the HEMT device is assembled in an RF circuit through a coplanar waveguide transmission line. A gate capacitor of the HEMT and a surface-mounted inductor on the transmission line are formed to generate LC resonance. By tuning the gate voltage V_g, the variations of gate capacitance and conductance of the HEMT are reflected sensitively from the resonance frequency and the magnitude of the RF reflection signal. The aim of the designed RF readout setup is to develop a highly sensitive HEMT-based detector.

Key words: radio-frequency circuit, high electron mobility transistor

中图分类号: (Radio-frequency and microwave measurements)

52.70.Gw

85.30.-z (Semiconductor devices) 73.61.Ey (III-V semiconductors)

张晓渝, 谭仁兵, 孙建东, 李欣幸, 周宇, 吕利, 秦华. Investigation of high sensitivity radio-frequency readout circuit based on AlGaN/GaN high electron mobility transistor[J]. 中国物理B, 2015, 24(10): 105201-105201.

Zhang Xiao-Yu (张晓渝), Tan Ren-Bing (谭仁兵), Sun Jian-Dong (孙建东), Li Xin-Xing (李欣幸), Zhou Yu (周宇), Lü Li (吕利), Qin Hua (秦华). Investigation of high sensitivity radio-frequency readout circuit based on AlGaN/GaN high electron mobility transistor[J]. Chin. Phys. B, 2015, 24(10): 105201-105201.

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Investigation of high sensitivity radio-frequency readout circuit based on AlGaN/GaN high electron mobility transistor

Investigation of high sensitivity radio-frequency readout circuit based on AlGaN/GaN high electron mobility transistor

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