中国物理B ›› 2014, Vol. 23 ›› Issue (3): 37303-037303.doi: 10.1088/1674-1056/23/3/037303
• CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES • 上一篇 下一篇
林芳a, 沈波a, 卢励吾a, 许福军a, 刘新宇b, 魏珂b
Lin Fang (林芳)a, Shen Bo (沈波)a, Lu Li-Wu (卢励吾)a, Xu Fu-Jun (许福军)a, Liu Xin-Yu (刘新宇)b, Wei Ke (魏珂)b
摘要: By using temperature-dependent current–voltage, variable-frequency capacitance–voltage, and Hall measurements, the effects of the thermal oxidation on the electrical properties of Ni/Au Schottky contacts on lattice-matched In0.18Al0.82N/GaN heterostructures are investigated. Decrease of the reverse leakage current down to six orders of magnitude is observed after the thermal oxidation of the In0.18Al0.82N/GaN heterostructures at 700 ℃. It is confirmed that the reverse leakage current is dominated by the Frenkel–Poole emission, and the main origin of the leakage current is the emission of electrons from a trap state near the metal/semiconductor interface into a continuum of electronic states associated with the conductive dislocations in the InxAl1-xN barrier. It is believed that the thermal oxidation results in the formation of a thin oxide layer on the InxAl1-xN surface, which increases the electron emission barrier height.
中图分类号: (III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions)