中国物理B ›› 2014, Vol. 23 ›› Issue (3): 37302-037302.doi: 10.1088/1674-1056/23/3/037302

• CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES • 上一篇    下一篇

Improved mobility of AlGaN channel heterojunction material using an AlGaN/GaN composite buffer layer

温慧娟, 张进成, 陆小力, 王之哲, 哈微, 葛莎莎, 曹荣涛, 郝跃   

  1. State Key Laboratory of Wide Band Gap Semiconductor Technology, School of Microelectronics, Xidian University, Xi’an 710071, China
  • 收稿日期:2013-08-12 修回日期:2013-09-24 出版日期:2014-03-15 发布日期:2014-03-15
  • 基金资助:
    Project supported by the National Science and Technology Major Project of the Ministry of Science and Technology of China (Grant Nos. 2011ZX01002-002 and 2013ZX02308-002), the Fundamental Research Funds for the Central Universities of Ministry of Education of China, and the National Natural Science Foundation of China (Grant Nos. 61204006 and 61106063).

Improved mobility of AlGaN channel heterojunction material using an AlGaN/GaN composite buffer layer

Wen Hui-Juan (温慧娟), Zhang Jin-Cheng (张进成), Lu Xiao-Li (陆小力), Wang Zhi-Zhe (王之哲), Ha Wei (哈微), Ge Sha-Sha (葛莎莎), Cao Rong-Tao (曹荣涛), Hao Yue (郝跃)   

  1. State Key Laboratory of Wide Band Gap Semiconductor Technology, School of Microelectronics, Xidian University, Xi’an 710071, China
  • Received:2013-08-12 Revised:2013-09-24 Online:2014-03-15 Published:2014-03-15
  • Contact: Zhang Jin-Cheng E-mail:jchzhang@xidian.edu.cn
  • Supported by:
    Project supported by the National Science and Technology Major Project of the Ministry of Science and Technology of China (Grant Nos. 2011ZX01002-002 and 2013ZX02308-002), the Fundamental Research Funds for the Central Universities of Ministry of Education of China, and the National Natural Science Foundation of China (Grant Nos. 61204006 and 61106063).

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摘要： The quality of an AlGaN channel heterojunction on a sapphire substrate is massively improved by using an AlGaN/GaN composite buffer layer. We demonstrate an Al0.4Ga0.6N/Al0.18Ga0.82N heterojunction with a state-of-the-art mobility of 815 cm2/(V·s) and a sheet resistance of 890 Ω/ under room temperature. The crystalline quality and the electrical properties of the AlGaN heterojunction material are analyzed by atomic force microscopy, high-resolution X-ray diffraction, and van der Pauw Hall and capacitance–voltage (C–V) measurements. The results indicate that the improved electrical properties should derive from the reduced surface roughness and low dislocation density.

关键词: AlGaN channel, heterojunction, mobility, electrical properties

Abstract: The quality of an AlGaN channel heterojunction on a sapphire substrate is massively improved by using an AlGaN/GaN composite buffer layer. We demonstrate an Al0.4Ga0.6N/Al0.18Ga0.82N heterojunction with a state-of-the-art mobility of 815 cm2/(V·s) and a sheet resistance of 890 Ω/ under room temperature. The crystalline quality and the electrical properties of the AlGaN heterojunction material are analyzed by atomic force microscopy, high-resolution X-ray diffraction, and van der Pauw Hall and capacitance–voltage (C–V) measurements. The results indicate that the improved electrical properties should derive from the reduced surface roughness and low dislocation density.

Key words: AlGaN channel, heterojunction, mobility, electrical properties

中图分类号:  (III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions)

  • 73.40.Kp
73.40.-c (Electronic transport in interface structures) 73.61.Ey (III-V semiconductors) 78.30.Fs (III-V and II-VI semiconductors)