中国物理B ›› 2012, Vol. 21 ›› Issue (11): 116104-116104.doi: 10.1088/1674-1056/21/11/116104
• CONDENSED MATTER: STRUCTURAL, MECHANICAL, AND THERMAL PROPERTIES • 上一篇 下一篇
郑中山, 刘忠立, 于芳, 李宁
Zheng Zhong-Shan (郑中山), Liu Zhong-Li (刘忠立), Yu Fang (于芳), Li Ning (李宁 )
摘要: Nitrogen ions of various doses are implanted into the buried oxide (BOX) of commercial silicon-on-insulator (SOI) materials, and subsequent annealings are carried out at various temperatures. The total dose radiation responses of the nitrogen-implanted SOI wafers are characterized by high frequency capacitance-voltage (C-V) technique after irradiation using a Co-60 source. It is found that there exist relatively complex relationships between the radiation hardness of the nitrogen implanted BOX and the nitrogen implantation dose at different irradiation doses. The experimental results also suggest that a lower dose nitrogen implantation and a higher post-implantation annealing temperature are suitable for improving the radiation hardness of SOI wafer. Based on the measured C-V data, secondary ion mass spectrometry (SIMS), and Fourier transform infrared (FTIR) spectroscopy, the total dose responses of the nitrogen-implanted SOI wafers are discussed.
中图分类号: (Radiation effects on specific materials)