Analysis of functional failure mode of commercial deep sub-micron SRAM induced by total dose irradiation

doi:10.1088/1674-1056/24/10/106106

中国物理B ›› 2015, Vol. 24 ›› Issue (10): 106106-106106.doi: 10.1088/1674-1056/24/10/106106

• CONDENSED MATTER: STRUCTURAL, MECHANICAL, AND THERMAL PROPERTIES • 上一篇下一篇

Analysis of functional failure mode of commercial deep sub-micron SRAM induced by total dose irradiation

郑齐文^{a b c}, 崔江维^{a b}, 周航^{a b c}, 余德昭^{a b c}, 余学峰^{a b}, 陆妩^{a b}, 郭旗^{a b}, 任迪远^{a b}

a Key Laboratory of Functional Materials and Devices for Special Environments, Xinjiang Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Urumqi 830011, China;
b Xinjiang Key Laboratory of Electronic Information Material and Device, Urumqi 830011, China;
c University of Chinese Academy of Sciences, Beijing 100049, China

收稿日期:2015-03-03 修回日期:2015-05-07 出版日期:2015-10-05 发布日期:2015-10-05

Analysis of functional failure mode of commercial deep sub-micron SRAM induced by total dose irradiation

Zheng Qi-Wen (郑齐文)^{a b c}, Cui Jiang-Wei (崔江维)^{a b}, Zhou Hang (周航)^{a b c}, Yu De-Zhao (余德昭)^{a b c}, Yu Xue-Feng (余学峰)^{a b}, Lu Wu (陆妩)^{a b}, Guo Qi (郭旗)^{a b}, Ren Di-Yuan (任迪远)^{a b}

a Key Laboratory of Functional Materials and Devices for Special Environments, Xinjiang Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Urumqi 830011, China;
b Xinjiang Key Laboratory of Electronic Information Material and Device, Urumqi 830011, China;
c University of Chinese Academy of Sciences, Beijing 100049, China

Received:2015-03-03 Revised:2015-05-07 Online:2015-10-05 Published:2015-10-05
Contact: Cui Jiang-Wei E-mail:cuijw@ms.xjb.ac.cn

摘要/Abstract

摘要： Functional failure mode of commercial deep sub-micron static random access memory (SRAM) induced by total dose irradiation is experimentally analyzed and verified by circuit simulation. We extensively characterize the functional failure mode of the device by testing its electrical parameters and function with test patterns covering different functional failure modes. Experimental results reveal that the functional failure mode of the device is a temporary function interruption caused by peripheral circuits being sensitive to the standby current rising. By including radiation-induced threshold shift and off-state leakage current in memory cell transistors, we simulate the influence of radiation on the functionality of the memory cell. Simulation results reveal that the memory cell is tolerant to irradiation due to its high stability, which agrees with our experimental result.

关键词: total dose irradiation, static random access memory, functional failure mode

Abstract: Functional failure mode of commercial deep sub-micron static random access memory (SRAM) induced by total dose irradiation is experimentally analyzed and verified by circuit simulation. We extensively characterize the functional failure mode of the device by testing its electrical parameters and function with test patterns covering different functional failure modes. Experimental results reveal that the functional failure mode of the device is a temporary function interruption caused by peripheral circuits being sensitive to the standby current rising. By including radiation-induced threshold shift and off-state leakage current in memory cell transistors, we simulate the influence of radiation on the functionality of the memory cell. Simulation results reveal that the memory cell is tolerant to irradiation due to its high stability, which agrees with our experimental result.

Key words: total dose irradiation, static random access memory, functional failure mode

中图分类号: (γ-ray effects)

61.80.Ed

61.82.Fk (Semiconductors) 85.30.Tv (Field effect devices) 07.85.-m (X- and γ-ray instruments)

郑齐文, 崔江维, 周航, 余德昭, 余学峰, 陆妩, 郭旗, 任迪远. Analysis of functional failure mode of commercial deep sub-micron SRAM induced by total dose irradiation[J]. 中国物理B, 2015, 24(10): 106106-106106.

Zheng Qi-Wen (郑齐文), Cui Jiang-Wei (崔江维), Zhou Hang (周航), Yu De-Zhao (余德昭), Yu Xue-Feng (余学峰), Lu Wu (陆妩), Guo Qi (郭旗), Ren Di-Yuan (任迪远). Analysis of functional failure mode of commercial deep sub-micron SRAM induced by total dose irradiation[J]. Chin. Phys. B, 2015, 24(10): 106106-106106.

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Analysis of functional failure mode of commercial deep sub-micron SRAM induced by total dose irradiation

Analysis of functional failure mode of commercial deep sub-micron SRAM induced by total dose irradiation

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