中国物理B ›› 2016, Vol. 25 ›› Issue (3): 37308-037308.doi: 10.1088/1674-1056/25/3/037308

• CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES • 上一篇    下一篇

Growth mechanism of atomic-layer-deposited TiAlC metal gatebased on TiCl4 and TMA precursors

Jinjuan Xiang(项金娟), Yuqiang Ding(丁玉强), Liyong Du(杜立永), Junfeng Li(李俊峰),Wenwu Wang(王文武), Chao Zhao(赵超)   

  1. 1. Key Laboratory of Microelectronics Devices & Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China;
    2. Chemical and Material Engineering, Jiangnan University, Wuxi 214122, China
  • 收稿日期:2015-11-04 修回日期:2015-11-14 出版日期:2016-03-05 发布日期:2016-03-05
  • 通讯作者: Chao Zhao E-mail:zhaochao@ime.ac.cn
  • 基金资助:
    Project supported by the Key Technology Study for 16/14 nm Program of the Ministry of Science and Technology of China (Grant No. 2013ZX02303).

Growth mechanism of atomic-layer-deposited TiAlC metal gatebased on TiCl4 and TMA precursors

Jinjuan Xiang(项金娟)1, Yuqiang Ding(丁玉强)2, Liyong Du(杜立永)2, Junfeng Li(李俊峰)1,Wenwu Wang(王文武)1, Chao Zhao(赵超)1   

  1. 1. Key Laboratory of Microelectronics Devices & Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China;
    2. Chemical and Material Engineering, Jiangnan University, Wuxi 214122, China
  • Received:2015-11-04 Revised:2015-11-14 Online:2016-03-05 Published:2016-03-05
  • Contact: Chao Zhao E-mail:zhaochao@ime.ac.cn
  • Supported by:
    Project supported by the Key Technology Study for 16/14 nm Program of the Ministry of Science and Technology of China (Grant No. 2013ZX02303).

RichHTML

0

PDF (PC)

975

赞

摘要： TiAlC metal gate for the metal-oxide-semiconductor field-effect-transistor (MOSFET) is grown by the atomic layer deposition method using TiCl4 and Al(CH3)3(TMA) as precursors. It is found that the major product of the TiCl4 and TMA reaction is TiAlC, and the components of C and Al are found to increase with higher growth temperature. The reaction mechanism is investigated by using x-ray photoemission spectroscopy (XPS), Fourier transform infrared spectroscopy (FTIR), and scanning electron microscope (SEM). The reaction mechanism is as follows. Ti is generated through the reduction of TiCl4 by TMA. The reductive behavior of TMA involves the formation of ethane. The Ti from the reduction of TiCl4 by TMA reacts with ethane easily forming heterogenetic TiCH2, TiCH=CH2 and TiC fragments. In addition, TMA thermally decomposes, driving Al into the TiC film and leading to TiAlC formation. With the growth temperature increasing, TMA decomposes more severely, resulting in more C and Al in the TiAlC film. Thus, the film composition can be controlled by the growth temperature to a certain extent.

关键词: atomic layer deposition, metal gate, TiAlC, reaction mechanism

Abstract: TiAlC metal gate for the metal-oxide-semiconductor field-effect-transistor (MOSFET) is grown by the atomic layer deposition method using TiCl4 and Al(CH3)3(TMA) as precursors. It is found that the major product of the TiCl4 and TMA reaction is TiAlC, and the components of C and Al are found to increase with higher growth temperature. The reaction mechanism is investigated by using x-ray photoemission spectroscopy (XPS), Fourier transform infrared spectroscopy (FTIR), and scanning electron microscope (SEM). The reaction mechanism is as follows. Ti is generated through the reduction of TiCl4 by TMA. The reductive behavior of TMA involves the formation of ethane. The Ti from the reduction of TiCl4 by TMA reacts with ethane easily forming heterogenetic TiCH2, TiCH=CH2 and TiC fragments. In addition, TMA thermally decomposes, driving Al into the TiC film and leading to TiAlC formation. With the growth temperature increasing, TMA decomposes more severely, resulting in more C and Al in the TiAlC film. Thus, the film composition can be controlled by the growth temperature to a certain extent.

Key words: atomic layer deposition, metal gate, TiAlC, reaction mechanism

中图分类号:  (Metal-insulator-semiconductor structures (including semiconductor-to-insulator))

  • 73.40.Qv