Scaling effects of single-event gate rupture in thin oxides

doi:10.1088/1674-1056/22/11/118501

中国物理B ›› 2013, Vol. 22 ›› Issue (11): 118501-118501.doi: 10.1088/1674-1056/22/11/118501

• INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY • 上一篇下一篇

Scaling effects of single-event gate rupture in thin oxides

丁李利, 陈伟, 郭红霞, 闫逸华, 郭晓强, 范如玉

Northwest Institute of Nuclear Technology, Xi’an 710024, China

收稿日期:2013-03-21 修回日期:2013-04-18 出版日期:2013-09-28 发布日期:2013-09-28

Scaling effects of single-event gate rupture in thin oxides

Ding Li-Li (丁李利), Chen Wei (陈伟), Guo Hong-Xia (郭红霞), Yan Yi-Hua (闫逸华), Guo Xiao-Qiang (郭晓强), Fan Ru-Yu (范如玉)

Northwest Institute of Nuclear Technology, Xi’an 710024, China

Received:2013-03-21 Revised:2013-04-18 Online:2013-09-28 Published:2013-09-28
Contact: Ding Li-Li E-mail:lili03.ding@gmail.com

摘要/Abstract

摘要： The dynamics of the excess carriers generated by incident heavy ions are considered in both SiO₂ and Si substrate. Influences of the initial radius of the charge track, surface potential decrease, external electric field, and the LET value of the incident ion on internal electric field buildup are analyzed separately. Considering the mechanisms of recombination, impact ionization, and bandgap tunneling, models are verified by using published experimental data. Moreover, the scaling effects of single-event gate rupture in thin gate oxides are studied, with the feature size of the MOS device down to 90 nm. The value of the total electric field decreases rapidly along with the decrease of oxide thickness in the first period (12 nm to 3.3 nm), and then increases a little when the gate oxide becomes thinner and thinner (3.3 nm to 1.8 nm).

关键词: single-event gate rupture (SEGR), heavy ion, thin oxides, TCAD simulation

Abstract: The dynamics of the excess carriers generated by incident heavy ions are considered in both SiO₂ and Si substrate. Influences of the initial radius of the charge track, surface potential decrease, external electric field, and the LET value of the incident ion on internal electric field buildup are analyzed separately. Considering the mechanisms of recombination, impact ionization, and bandgap tunneling, models are verified by using published experimental data. Moreover, the scaling effects of single-event gate rupture in thin gate oxides are studied, with the feature size of the MOS device down to 90 nm. The value of the total electric field decreases rapidly along with the decrease of oxide thickness in the first period (12 nm to 3.3 nm), and then increases a little when the gate oxide becomes thinner and thinner (3.3 nm to 1.8 nm).

Key words: single-event gate rupture (SEGR), heavy ion, thin oxides, TCAD simulation

中图分类号: (Semiconductor-device characterization, design, and modeling)

85.30.De

61.80.-x (Physical radiation effects, radiation damage) 73.40.Qv (Metal-insulator-semiconductor structures (including semiconductor-to-insulator))

丁李利, 陈伟, 郭红霞, 闫逸华, 郭晓强, 范如玉. Scaling effects of single-event gate rupture in thin oxides[J]. 中国物理B, 2013, 22(11): 118501-118501.

Ding Li-Li (丁李利), Chen Wei (陈伟), Guo Hong-Xia (郭红霞), Yan Yi-Hua (闫逸华), Guo Xiao-Qiang (郭晓强), Fan Ru-Yu (范如玉). Scaling effects of single-event gate rupture in thin oxides[J]. Chin. Phys. B, 2013, 22(11): 118501-118501.

参考文献 19

[1]	Swift G M and Katz R 1996 IEEE Trans. Nucl. Sci. 43 967
[2]	Lum G K, Boruta N, Baker J M, Robinette L, Shaneyfelt M R, Schwank J R, Dodd P E and Felix J A 2004 IEEE Trans. Nucl. Sci. 51 3263
[3]	Silvestri M, Gerardin S, Paccagnella A and Ghidini G 2009 IEEE Trans. Nucl. Sci. 56 1964
[4]	Silvestri M, Gerardin S, Faccio F and Paccagnella A 2010 IEEE Trans. Nucl. Sci. 57 1842
[5]	Tang B Q, Wang Y P, Geng B, Chen X H, He C H and Yang H L 2000 Atomic Energy Science and Technology 34 339 (in Chinese)
[6]	Titus J L, Su Y S, Savage M W, Mickevicius R V and Wheatley C F 2003 IEEE Trans. Nucl. Sci. 50 2256
[7]	Tang Z H, Hu G Y, Chen G B, Tan K Z, Liu Y, Luo J and Xu X L 2012 J. Semicond. 33 044002
[8]	Wang L X, Lu J, Liu G, Wang C L, Teng R, Han Z S and Xia Y 2012 J. Semicond. 33 054008
[9]	He C H, Geng B, He B P, Yao Y J, Li Y H, Peng H L, Lin D S, Zhou H and Chen Y S 2004 Acta Phys. Sin. 53 194 (in Chinese)
[10]	Liu Z, Chen S M, Liang B, Liu B W and Zhao Z Y 2010 Acta Phys. Sin. 59 649 (in Chinese)
[11]	Zhang K Y, Guo H X, Luo Y H, Fan R Y, Chen W, Lin D S, Guo G and Yan Y H 2011 Chin. Phys. B 20 068501
[12]	Titus J L, Wheatley C F, Burton D I, Mouret I, Allenspach M, Brews J, Schrimpf R, Galloway K and Pease R L 1995 IEEE Trans. Nucl. Sci. 42 1928
[13]	Sexton F W, Fleetwood D M, Shaneyfelt M R, Dodd P E and Hash G L 1997 IEEE Trans. Nucl. Sci. 44 2345
[14]	Boruta N, Lum G K, Donnel H O, Robinette L, Shaneyfelt M R and Schwank J R 2001 IEEE Trans. Nucl. Sci. 48 1917
[15]	Jaffe G 1913 Ann. Phys. 42 303
[16]	Oldham T R and McGarrity M 1981 IEEE Trans. Nucl. Sci. 28 3975
[17]	Grubin H L, Kreskovsky J P and Weinberg B C 1984 IEEE Trans. Nucl. Sci. 31 1164
[18]	Ma T P and Dressendorfer 1989 Ionizing Radiation Effects in MOS Devices and Circuits (Wiley-Interscience Publication)
[19]	Hughes R C 1978 Solid-State Electron. 21 251

Scaling effects of single-event gate rupture in thin oxides

Scaling effects of single-event gate rupture in thin oxides

PDF (PC)

赞

可视化

摘要/Abstract

引用本文

使用本文

参考文献 19

相关文章 15

Metrics

本文评价

推荐阅读 0

[1]	Hong Zhang(张鸿), Hongxia Guo(郭红霞), Zhifeng Lei(雷志锋), Chao Peng(彭超), Zhangang Zhang(张战刚), Ziwen Chen(陈资文), Changhao Sun(孙常皓), Yujuan He(何玉娟), Fengqi Zhang(张凤祁), Xiaoyu Pan(潘霄宇), Xiangli Zhong(钟向丽), and Xiaoping Ouyang(欧阳晓平). Experiment and simulation on degradation and burnout mechanisms of SiC MOSFET under heavy ion irradiation[J]. 中国物理B, 2023, 32(2): 28504-028504.
[2]	Dong-Qing Li(李东青), Tian-Qi Liu(刘天奇), Pei-Xiong Zhao(赵培雄), Zhen-Yu Wu(吴振宇), Tie-Shan Wang(王铁山), and Jie Liu(刘杰). Strategy to mitigate single event upset in 14-nm CMOS bulk FinFET technology[J]. 中国物理B, 2022, 31(5): 56106-056106.
[3]	Manhong Zhang(张满红) and Wanchen Wu(武万琛). An insulated-gate bipolar transistor model based on the finite-volume charge method[J]. 中国物理B, 2022, 31(12): 128501-128501.
[4]	Ning Liu(刘宁), Li-Min Zhang(张利民), Xue-Ting Liu(刘雪婷), Shuo Zhang(张硕), Tie-Shan Wang(王铁山), and Hong-Xia Guo(郭红霞). Lattice damage in InGaN induced by swift heavy ion irradiation[J]. 中国物理B, 2022, 31(10): 106103-106103.
[5]	Yang-Tong Yu(俞扬同), Xue-Qiang Xiang(向学强), Xuan-Ze Zhou(周选择), Kai Zhou(周凯), Guang-Wei Xu(徐光伟), Xiao-Long Zhao(赵晓龙), and Shi-Bing Long(龙世兵). Device topological thermal management of β-Ga₂O₃ Schottky barrier diodes[J]. 中国物理B, 2021, 30(6): 67302-067302.
[6]	Wen-Si Ai(艾文思), Jie Liu(刘杰), Qian Feng(冯倩), Peng-Fei Zhai(翟鹏飞), Pei-Pei Hu(胡培培), Jian Zeng(曾健), Sheng-Xia Zhang(张胜霞), Zong-Zhen Li(李宗臻), Li Liu(刘丽), Xiao-Yu Yan(闫晓宇), and You-Mei Sun(孙友梅). Degradation of β-Ga₂O₃ Schottky barrier diode under swift heavy ion irradiation[J]. 中国物理B, 2021, 30(5): 56110-056110.
[7]	章合坤, 田璇, 何俊鹏, 宋哲, 蔚倩倩, 李靓, 李明, 赵连城, 高立明. Investigation of gate oxide traps effect on NAND flash memory by TCAD simulation[J]. 中国物理B, 2020, 29(3): 38501-038501.
[8]	魏佳男, 贺朝会, 李培, 李永宏. Research on SEE mitigation techniques using back junction and p⁺ buffer layer in domestic non-DTI SiGe HBTs by TCAD[J]. 中国物理B, 2019, 28(6): 68503-068503.
[9]	张胜霞, 刘杰, 谢华, 徐丽君, 胡培培, 曾健, 李宗臻, 刘丽, 艾文思, 翟鹏飞. Vibrational modes in La₂Zr₂O₇ pyrochlore irradiated with disparate electrical energy losses[J]. 中国物理B, 2019, 28(11): 116102-116102.
[10]	毕津顺, 习凯, 李博, 王海滨, 季兰龙, 李金, 刘明. Heavy ion induced upset errors in 90-nm 64 Mb NOR-type floating-gate Flash memory[J]. 中国物理B, 2018, 27(9): 98501-098501.
[11]	殷亚楠, 刘杰, 姬庆刚, 赵培雄, 刘天奇, 叶兵, 罗捷, 孙友梅, 侯明东. Influences of total ionizing dose on single event effect sensitivity in floating gate cells[J]. 中国物理B, 2018, 27(8): 86103-086103.
[12]	张胜霞, 刘杰, 曾健, 胡培培, 翟鹏飞. Structural modification in swift heavy ion irradiated muscovite mica[J]. 中国物理B, 2017, 26(10): 106102-106102.
[13]	潘霄宇, 郭红霞, 罗尹虹, 张凤祁, 丁李利, 魏佳男, 赵雯. Impact of neutron-induced displacement damage on the single event latchup sensitivity of bulk CMOS SRAM[J]. 中国物理B, 2017, 26(1): 18501-018501.
[14]	周贤明, 程锐, 雷瑜, 孙渊博, 王瑜玉, 王兴, 徐戈, 梅策香, 张小安, 陈熙萌, 肖国青, 赵永涛. X-ray emission from 424-MeV/u C ions impacting on selected target[J]. 中国物理B, 2016, 25(2): 23402-023402.
[15]	曾健, 刘杰, 张胜霞, 翟鹏飞, 姚会军, 段敬来, 郭航, 侯明东, 孙友梅. Irradiation effects of graphene and thin layer graphite induced by swift heavy ions[J]. 中国物理B, 2015, 24(8): 86103-086103.