中国物理B ›› 2013, Vol. 22 ›› Issue (11): 118102-118102.doi: 10.1088/1674-1056/22/11/118102

• INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY • 上一篇    下一篇

Physical model for the exotic ultraviolet photo-conductivity of ZnO nanowire films

潘跃武a, 任守田b, 曲士良b, 王强b   

  1. a Mathematics and Physical Sciences Technology, Xuzhou Institute of Technology, Xuzhou 221008, China;
    b Department of Optoelectronic Science, Harbin Institute of Technology at Weihai, Weihai 264209, China
  • 收稿日期:2013-05-18 修回日期:2013-07-08 出版日期:2013-09-28 发布日期:2013-09-28
  • 基金资助:
    Project supported by the National Natural Science Foundation of China (Grant Nos. 11274082 and 51172194) and the Excellent Young Scientist Research Award Fund of Shandong Province, China (Grant No. BS2011CL002).

Physical model for the exotic ultraviolet photo-conductivity of ZnO nanowire films

Pan Yue-Wu (潘跃武)a, Ren Shou-Tian (任守田)b, Qu Shi-Liang (曲士良)b, Wang Qiang (王强)b   

  1. a Mathematics and Physical Sciences Technology, Xuzhou Institute of Technology, Xuzhou 221008, China;
    b Department of Optoelectronic Science, Harbin Institute of Technology at Weihai, Weihai 264209, China
  • Received:2013-05-18 Revised:2013-07-08 Online:2013-09-28 Published:2013-09-28
  • Contact: Wang Qiang E-mail:wq750505@hotmail.com
  • Supported by:
    Project supported by the National Natural Science Foundation of China (Grant Nos. 11274082 and 51172194) and the Excellent Young Scientist Research Award Fund of Shandong Province, China (Grant No. BS2011CL002).

摘要: Employing a simple and efficient method of electro-chemical anodization, ZnO nanowire films are fabricated on Zn foil, and an ultraviolet (UV) sensor prototype is formed for investigating the electronic transport through back-to-back double junctions. The UV (365 nm) responses of surface-contacted ZnO film are provided by I–V measurement, along with the current evolution process by on/off of UV illumination. In this paper, the back-to-back metal–seconductor–metal (M–S–M) model is used to explain the electronic transport of a ZnO nanowire film based structure. A thermionic-field electron emission mechanism is employed to fit and explain the as-observed UV sensitive electronic transport properties of ZnO film with surface-modulation by oxygen and water molecular coverage.

关键词: ZnO nanowires, metal–semiconductor–metal contact, water modulated surface barrier, thermionic-field electron emission

Abstract: Employing a simple and efficient method of electro-chemical anodization, ZnO nanowire films are fabricated on Zn foil, and an ultraviolet (UV) sensor prototype is formed for investigating the electronic transport through back-to-back double junctions. The UV (365 nm) responses of surface-contacted ZnO film are provided by I–V measurement, along with the current evolution process by on/off of UV illumination. In this paper, the back-to-back metal–seconductor–metal (M–S–M) model is used to explain the electronic transport of a ZnO nanowire film based structure. A thermionic-field electron emission mechanism is employed to fit and explain the as-observed UV sensitive electronic transport properties of ZnO film with surface-modulation by oxygen and water molecular coverage.

Key words: ZnO nanowires, metal–semiconductor–metal contact, water modulated surface barrier, thermionic-field electron emission

中图分类号:  (Chemical synthesis methods)

  • 81.16.Be
81.07.Gf (Nanowires) 72.10.-d (Theory of electronic transport; scattering mechanisms)