Effects of microwave pulse-width damage on a bipolar transistor

doi:10.1088/1674-1056/21/5/058502

中国物理B ›› 2012, Vol. 21 ›› Issue (5): 58502-058502.doi: 10.1088/1674-1056/21/5/058502

Effects of microwave pulse-width damage on a bipolar transistor

马振洋,柴常春,任兴荣,杨银堂,陈斌,赵颖博

School of Microelectronics, Xidian University, Key Laboratory of Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices, Xi'an 710071, China

收稿日期:2011-11-01 修回日期:2012-04-27 出版日期:2012-04-01 发布日期:2012-04-01
基金资助:
Project supported by the National Natural Science Foundation of China (Grant No. 60776034).

Effects of microwave pulse-width damage on a bipolar transistor

Ma Zhen-Yang(马振洋)^†, Chai Chang-Chun(柴常春), Ren Xing-Rong(任兴荣), Yang Yin-Tang(杨银堂), Chen Bin(陈斌), and Zhao Ying-Bo(赵颖博)

School of Microelectronics, Xidian University, Key Laboratory of Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices, Xi'an 710071, China

Received:2011-11-01 Revised:2012-04-27 Online:2012-04-01 Published:2012-04-01
Supported by:
Project supported by the National Natural Science Foundation of China (Grant No. 60776034).

摘要/Abstract

摘要： This paper presents a theoretical study of the pulse-width effects on the damage process of a typical bipolar transistor caused by high power microwaves (HPMs) through the injection approach. The dependences of the microwave damage power, P, and the absorbed energy, E, required to cause the device failure on the pulse width τ are obtained in the nanosecond region by utilizing the curve fitting method. A comparison of the microwave pulse damage data and the existing dc pulse damage data for the same transistor is carried out. By means of a two-dimensional simulator, ISE-TCAD, the internal damage processes of the device caused by microwave voltage signals and dc pulse voltage signals are analyzed comparatively. The simulation results suggest that the temperature-rising positions of the device induced by the microwaves in the negative and positive half periods are different, while only one hot spot exists under the injection of dc pulses. The results demonstrate that the microwave damage power threshold and the absorbed energy must exceed the dc pulse power threshold and the absorbed energy, respectively. The dc pulse damage data may be useful as a lower bound for microwave pulse damage data.

关键词: bipolar transistor, high power microwave, pulse width effects

Abstract: This paper presents a theoretical study of the pulse-width effects on the damage process of a typical bipolar transistor caused by high power microwaves (HPMs) through the injection approach. The dependences of the microwave damage power, P, and the absorbed energy, E, required to cause the device failure on the pulse width $\tau$ are obtained in the nanosecond region by utilizing the curve fitting method. A comparison of the microwave pulse damage data and the existing dc pulse damage data for the same transistor is carried out. By means of a two-dimensional simulator, ISE-TCAD, the internal damage processes of the device caused by microwave voltage signals and dc pulse voltage signals are analyzed comparatively. The simulation results suggest that the temperature-rising positions of the device induced by the microwaves in the negative and positive half periods are different, while only one hot spot exists under the injection of dc pulses. The results demonstrate that the microwave damage power threshold and the absorbed energy must exceed the dc pulse power threshold and the absorbed energy, respectively. The dc pulse damage data may be useful as a lower bound for microwave pulse damage data.

Key words: bipolar transistor, high power microwave, pulse width effects

中图分类号: (Bipolar transistors)

85.30.Pq

84.40.-x (Radiowave and microwave (including millimeter wave) technology)

马振洋, 柴常春, 任兴荣, 杨银堂, 陈斌, 赵颖博. Effects of microwave pulse-width damage on a bipolar transistor[J]. 中国物理B, 2012, 21(5): 58502-058502.

Ma Zhen-Yang(马振洋), Chai Chang-Chun(柴常春), Ren Xing-Rong(任兴荣), Yang Yin-Tang(杨银堂), Chen Bin(陈斌), and Zhao Ying-Bo(赵颖博) . Effects of microwave pulse-width damage on a bipolar transistor[J]. Chin. Phys. B, 2012, 21(5): 58502-058502.

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Effects of microwave pulse-width damage on a bipolar transistor

Effects of microwave pulse-width damage on a bipolar transistor

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